PA110BV.pdf 데이터시트 (총 5 페이지) - 파일 다운로드 PA110BV 데이타시트 다운로드

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PA110BV
N-Channel Enhancement Mode MOSFET
PRODUCT SUMMARY
V(BR)DSS
RDS(ON)
100V
110mΩ @VGS = 10V
ID
3.2A
SOP-8
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted)
PARAMETERS/TEST CONDITIONS
SYMBOL
LIMITS
Drain-Source Voltage
VDS 100
Gate-Source Voltage
VGS ±20
Continuous Drain Current
Pulsed Drain Current1
TA = 25 °C
TA = 70 °C
ID
IDM
3.2
2.5
10
Avalanche Current
IAS 25
Avalanche Energy
L =0.1mH
EAS
31
Power Dissipation
TA = 25 °C
TA = 70 °C
PD
2.5
1.6
Junction & Storage Temperature Range
TJ, Tstg
-55 to 150
UNITS
V
V
A
mJ
W
°C
THERMAL RESISTANCE RATINGS
THERMAL RESISTANCE
Junction-to-Ambient
1Pulse width limited by maximum junction temperature.
SYMBOL
RqJA
TYPICAL
MAXIMUM UNITS
50 °C / W
REV 1.0
1 2013-11-25

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PA110BV
N-Channel Enhancement Mode MOSFET
ELECTRICAL CHARACTERISTICS (TJ = 25 °C, Unless Otherwise Noted)
PARAMETER
SYMBOL
TEST CONDITIONS
LIMIT
UNITS
MSIN TYP MAX
STATIC
Drain-Source Breakdown
Voltage
Gate Threshold Voltage
Gate-Body Leakage
Zero Gate Voltage Drain
Current
Drain-Source On-State
Resistance1
Forward Transconductance1
V(BR)DSS
VGS(th)
IGSS
IDSS
RDS(ON)
gfs
VGS = 0V, ID = 250mA
VDS = VGS, ID = 250mA
VDS = 0V, VGS = ±20V
VDS = 80V, VGS = 0V
VDS = 80V, VGS = 0V, TJ = 55 °C
VGS = 4.5V, ID = 2A
VGS = 10V , ID = 2A
VDS = 10V, ID = 2A
100
V
1 23
±100 nA
1
mA
10
99 120
93 110
20 S
DYNAMIC
Input Capacitance
Output Capacitance
Reverse Transfer
CGaapteacRiteasniscteance
Ciss
Coss
Crss
Rg
VGS = 0V, VDS = 50V, f = 1MHz
VGS = 0V, VDS = 0V, f = 1MHz
1350
90
55
1.25
pF
Ω
Total Gate Charge2
Gate-Source Charge2
Qg
VGS =10V
VGS =4.5V
Qgs
VDS = 0.5V(BR)DSS,
VGS = 10V, ID = 2A
28
15
nC
3.5
Gate-Drain Charge2
Qgd
7
Turn-On Delay Time2
td(on)
14
Rise Time2
Turn-Off Delay Time2
tr
td(off)
VDS = 50V,RL = 25Ω
ID @ 2A, VGS = 10V, RGEN = 6Ω
14
nS
15
Fall Time2
tf
12
SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS (TJ = 25 °C)
Continuous Current
IS
1.8 A
Forward Voltage1
VSD IF = 2A, VGS = 0V
1.4 V
Reverse Recovery Time
Reverse Recovery Charge
trr
Qrr
IF = 2A, dlF/dt = 100A / μS
40 nS
39 nC
1Pulse test : Pulse Width 300 msec, Duty Cycle 2.
2Independent of operating temperature.
REV 1.0
2 2013-11-25

No Preview Available !

PA110BV
N-Channel Enhancement Mode MOSFET
REV 1.0
3 2013-11-25