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P0502CEA
N-Channel Enhancement Mode MOSFET
PRODUCT SUMMARY
V(BR)DSS
RDS(ON)
20V 5mΩ @VGS = 4.5V
ID
70A
PDFN 3x3P
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted)
PARAMETERS/TEST CONDITIONS
SYMBOL
LIMITS
Drain-Source Voltage
VDS 20
Gate-Source Voltage
VGS ±8
TC = 25 °C
70
Continuous Drain Current1,2
TC = 100 °C
TA = 25 °C
ID
44
17
Pulsed Drain Current1
TA = 70 °C
IDM
13
150
Avalanche Current
IAS 58
Avalanche Energy
L = 0.1mH
EAS
173
TC = 25 °C
40
Power Dissipation
TC = 100 °C
TA = 25 °C
PD
16
2.3
TA = 70 °C
1.4
Operating Junction & Storage Temperature Range
TJ, TSTG
-55 to 150
UNITS
V
A
mJ
W
°C
REV1.0
1 2014/6/16

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P0502CEA
N-Channel Enhancement Mode MOSFET
THERMAL RESISTANCE RATINGS
THERMAL RESISTANCE
SYMBOL
TYPICAL MAXIMUM
Junction-to-Ambient3
RqJA
54
Junction-to-Case
RqJC
3.1
1Pulse width limited by maximum junction temperature.
2Package limitation current is 38A.
3The value of RqJA is measured with the device mounted on 1in2 FR-4 board with 2oz.Copper , in a still air
environment with TA=25°C.The value in any given application depends on the user's specific board design.
UNITS
°C / W
ELECTRICAL CHARACTERISTICS (TJ = 25 °C, Unless Otherwise Noted)
PARAMETER
SYMBOL
Drain-Source Breakdown Voltage
Gate Threshold Voltage
Gate-Body Leakage
V(BR)DSS
VGS(th)
IGSS
Zero Gate Voltage Drain Current
On-State Drain Current1
IDSS
ID(ON)
Drain-Source On-State
Resistance1
RDS(ON)
Forward Transconductance1
gfs
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
Total Gate Charge2
Gate-Source Charge2
Gate-Drain Charge2
Turn-On Delay Time2
Rise Time2
Turn-Off Delay Time2
Fall Time2
Ciss
Coss
Crss
Rg
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
TEST CONDITIONS
STATIC
VGS = 0V, ID = 250mA
VDS = VGS, ID = 250mA
VDS = 0V, VGS = ±8V
VDS = 16V, VGS = 0V
VDS = 10V, VGS = 0V , TJ = 55 °C
VDS = 5V, VGS = 5V
VGS = 4.5V, ID = 5A
VGS = 2.5V, ID = 5A
VGS = 1.8V, ID = 5A
VDS = 5V, ID =5A
DYNAMIC
VGS = 0V, VDS = 10V, f = 1MHz
VGS = 0V, VDS = 0V, f = 1MHz
VDS = 0.5V(BR)DSS, ID = 5A,
VGS=4.5V
VDS = 0.5V(BR)DSS,
ID @ 5A, VGS = 4.5V, RGEN = 6Ω
MIN
20
0.4
150
LIMITS
TYP MAX
0.6 0.7
±100
1
10
45
5 5.7
6.7 8.2
45
3110
635
607
2
53
5
18.5
14
12
70
27
UNITS
V
nA
mA
A
S
pF
Ω
nC
nS
REV1.0
2 2014/6/16

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P0502CEA
N-Channel Enhancement Mode MOSFET
SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS
Continuous Current
Forward Voltage1
IS
VSD IS = 5A, VGS = 0V
Reverse Recovery Time
Reverse Recovery Charge
trr
Qrr
IF = 5A, dlF/dt = 100A / mS
1Pulse test : Pulse Width 300 msec, Duty Cycle 2.
2Independent of operating temperature.
70 A
1.3 V
38 nS
27 nC
REV1.0
3 2014/6/16