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CL616BA
N-Channel Enhancement Mode MOSFET
PRODUCT SUMMARY
V(BR)DSS
RDS(ON)
30V 6.9mΩ @VGS = 10V
ID
50A
PDFN 5X 6P
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted)
PARAMETERS/TEST CONDITIONS
SYMBOL
LIMITS
Drain-Source Voltage
VDS 30
Gate-Source Voltage
VGS ±20
Continuous Drain Current
Pulsed Drain Current1
TC = 25 °C
TC = 100 °C
ID
IDM
50
31.5
120
Continuous Drain Current
TA = 25 °C
TA = 70 °C
ID
13
10.5
Avalanche Current
IAS 24
Avalanche Energy
L =0.1mH
EAS
28.5
Power Dissipation
TC = 25 °C
TC = 100 °C
PD
31
12.5
Power Dissipation
TA = 25 °C
TA = 70 °C
PD
2.2
1.4
Operating Junction & Storage Temperature Range
Tj, Tstg
-55 to 150
UNITS
V
V
A
mJ
W
W
°C
THERMAL RESISTANCE RATINGS
THERMAL RESISTANCE
SYMBOL TYPICAL MAXIMUM
Junction-to-Ambient2
RqJA
57
Junction-to-Case
RqJC
4
1Pulse width limited by maximum junction temperature.
2The value of RθJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air
environment with TA =25°C.
UNITS
°C / W
REV 1.0
1 2013-12-19

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CL616BA
N-Channel Enhancement Mode MOSFET
ELECTRICAL CHARACTERISTICS (TJ = 25 °C, Unless Otherwise Noted)
PARAMETER
SYMBOL
TEST CONDITIONS
LIMITS
UNITS
MIN TYP MAX
STATIC
Drain-Source Breakdown
VGoaltteagTehreshold Voltage
Gate-Body Leakage
Zero Gate Voltage Drain
Current
V(BR)DSS
VGS(th)
IGSS
IDSS
VGS = 0V, ID = 250mA
VDS = VGS, ID = 250mA
30
1.35 1.7
3
V
VDS = 0V, VGS = ±20V
±100 nA
VDS = 24V, VGS = 0V
VDS = 20V, VGS = 0V, TJ = 55 °C
1
mA
10
Drain-Source On-State
Resistance1
RDS(ON)
VGS = 4.5V, ID = 13A
VGS = 10V, ID = 13A
6.2 9.4
4.7 6.9
Forward Transconductance1
gfs
VDS = 5V, ID = 13A
60 S
DYNAMIC
Input Capacitance
Output Capacitance
Reverse Transfer
GCaapteacRiteasniscteance
Ciss 847
Coss VGS = 0V, VDS = 15V, f = 1MHz 163 pF
Crss 97
Rg VGS = 0V, VDS = 0V, f = 1MHz 2.3 Ω
Total Gate Charge2
Gate-Source Charge2
Qg
VGS = 10V
VGS = 4.5V
Qgs
VGS = 10 V,
VDS = 15V, ID = 13A
17.5
9.3
2.1
Gate-Drain Charge2
Qgd
5.4
Turn-On Delay Time2
td(on)
27
Rise Time2
Turn-Off Delay Time2
tr
td(off)
VDS = 15V,
ID @ 13A, VGS = 10V, RGEN = 6Ω
23
51
Fall Time2
tf
24
SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS (TJ = 25 °C)
Continuous Current
IS
Forward Voltage1
VSD IF = 13A, VGS = 0V
Reverse Recovery Time
Reverse Recovery Charge
trr
Qrr
IF = 13A, dlF/dt = 100A / μS
10.8
2.3
1Pulse test : Pulse Width 300 msec, Duty Cycle 2.
2Independent of operating temperature.
25.8
1.2
nC
nS
A
V
nS
nC
REV 1.0
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CL616BA
N-Channel Enhancement Mode MOSFET
REV 1.0
3 2013-12-19

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CL616BA
N-Channel Enhancement Mode MOSFET
REV 1.0
4 2013-12-19

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CL616BA
N-Channel Enhancement Mode MOSFET
REV 1.0
5 2013-12-19