P0165ED.pdf 데이터시트 (총 8 페이지) - 파일 다운로드 P0165ED 데이타시트 다운로드

No Preview Available !

P0165ED
N-Channel Enhancement Mode MOSFET
PRODUCT SUMMARY
V(BR)DSS
RDS(ON)
650V
10.6Ω @VGS = 10V
ID
1A
TO-252
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted)
PARAMETERS/TEST CONDITIONS
SYMBOL
LIMITS
Drain-Source Voltage
VDS 650
Gate-Source Voltage
VGS ±30
Continuous Drain Current2
Pulsed Drain Current12
Avalanche Current3
TC = 25 °C
TC = 100 °C
ID
IDM
IAS
1
0.7
3
0.5
Avalanche Energy3
EAS 1.25
Power Dissipation
TC = 25 °C
TC = 100 °C
PD
37
15
Operating Junction & Storage Temperature Range
Tj, Tstg
-55 to 150
UNITS
V
A
mJ
W
°C
THERMAL RESISTANCE RATINGS
THERMAL RESISTANCE
Junction-to-Ambient
Junction-to-Case
1Pulse width limited by maximum junction temperature.
2Limited only by maximum temperature allowed.
3VDD = 50V , L = 10mH ,starting TJ = 25˚C.
SYMBOL
RqJA
RqJC
TYPICAL
MAXIMUM
62.5
3.3
UNITS
°C / W
REV 1.0
1 2016/1/14

No Preview Available !

P0165ED
N-Channel Enhancement Mode MOSFET
ELECTRICAL CHARACTERISTICS (TJ = 25 °C, Unless Otherwise Noted)
PARAMETER
SYMBOL
TEST CONDITIONS
LIMITS
UNITS
MIN TYP MAX
STATIC
Drain-Source Breakdown Voltage
Gate Threshold Voltage
Gate-Body Leakage
V(BR)DSS
VGS(th)
IGSS
Gate Voltage Drain Current
IDSS
VGS = 0V, ID = 250mA
VDS = VGS, ID = 250mA
VDS = 0V, VGS = ±30V
VDS = 650V, VGS = 0V , TC = 25 °C
VDS = 520V, VGS = 0V , TC = 100 °C
650
2
3.1 4
±100
1
10
V
nA
mA
Drain-Source On-State
Resistance1
RDS(ON)
VGS = 10V, ID = 0.5A
8.7 10.6 Ω
Forward Transconductance1
gfs
VDS = 15V, ID = 0.5A
2S
DYNAMIC
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge2
Gate-Source Charge2
Gate-Drain Charge2
Turn-On Delay Time2
Rise Time2
Turn-Off Delay Time2
Fall Time2
Ciss
Coss
Crss
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
VGS = 0V, VDS = 25V, f = 1MHz
VDD = 520V, ID = 1A, VGS = 10V
VGS = 10V , VDD = 325V,
ID = 1A, RG= 25Ω
154
30 pF
5
3.5
0.7 nC
0.8
12
26
nS
25
26
SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS (TJ = 25 °C)
Continuous Current3
IS
Forward Voltage1
VSD IF = 1A, VGS = 0V
Reverse Recovery Time
Reverse Recovery Charge
trr
Qrr
IF = 1A, dlF/dt = 100A / mS
249
0.63
1Pulse test : Pulse Width 300 msec, Duty Cycle 2.
2Independent of operating temperature.
3Pulse width limited by maximum junction temperature.
1
1
A
V
nS
mC
REV 1.0
2 2016/1/14

No Preview Available !

P0165ED
N-Channel Enhancement Mode MOSFET
REV 1.0
3 2016/1/14