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P0403BD
N-Channel Enhancement Mode MOSFET
PRODUCT SUMMARY
V(BR)DSS
RDS(ON)
30V 4.3mΩ @VGS = 10V
ID
81A
TO-252
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted)
PARAMETERS/TEST CONDITIONS
SYMBOL
LIMITS
Drain-Source Voltage
VDS 30
Gate-Source Voltage
VGS ±20
Continuous Drain Current
Pulsed Drain Current1
TC = 25 °C
TC = 100 °C
ID
IDM
81
51
200
Avalanche Current
IAS 66
Avalanche Energy
L = 0.1mH
EAS
220
Power Dissipation
TC = 25 °C
TC = 100 °C
PD
51
20
Operating Junction & Storage Temperature Range
TJ, TSTG
-55 to 150
UNITS
V
A
mJ
W
°C
THERMAL RESISTANCE RATINGS
THERMAL RESISTANCE
Junction-to-Case
Junction-to-Ambient
1Pulse width limited by maximum junction temperature.
SYMBOL
RqJC
RqJA
TYPICAL
MAXIMUM
2.45
62.5
UNITS
°C / W
Ver 1.1
1 2013-3-15

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P0403BD
N-Channel Enhancement Mode MOSFET
ELECTRICAL CHARACTERISTICS (TJ = 25 °C, Unless Otherwise Noted)
PARAMETER
SYMBOL
TEST CONDITIONS
LIMITS
MIN TYP MAX
STATIC
Drain-Source Breakdown
GVoaltteagTehreshold Voltage
Gate-Body Leakage
V(BR)DSS
VGS(th)
IGSS
VGS = 0V, ID = 250mA
VDS = VGS, ID = 250mA
VDS = 0V, VGS = ±20V
30
1.0 1.4 3.0
±250
Zero Gate Voltage Drain Current
On-State Drain Current1
IDSS
ID(ON)
VDS = 20V, VGS = 0V
VDS = 20V, VGS = 0V , TJ = 125 °C
VDS = 10V, VGS = 10V
200
1
10
Drain-Source On-State
Resistance1
Forward Transconductance1
RDS(ON)
gfs
VGS = 4.5V, ID = 30A
VGS = 10V, ID = 45A
VDS = 5V, ID = 20A
6.5 7.9
3.9 4.3
100
DYNAMIC
Input Capacitance
Ciss
2430
Output Capacitance
Coss
VGS = 0V, VDS = 15V, f = 1MHz
469
Reverse Transfer Capacitance
Crss
412
Gate Resistance
Rg VGS = 0V, VDS = 0V, f = 1MHz
2
Total Gate Charge2
Gate-Source Charge2
Gate-Drain Charge2
Turn-On Delay Time2
Rise Time2
Turn-Off Delay Time2
Fall Time2
Qg(VGS = 10V)
Qg(VGS = 4.5V)
Qgs
Qgd
td(on)
tr
td(off)
tf
VDS = 15V, ID = 25A
VDD = 15V,
ID @ 25A, VGS = 10V, RGEN = 3Ω
52
15
14
10
16
20
42
18
SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS (TJ = 25 °C)
Continuous Current
Forward Voltage1
IS
VSD IF = 25A, VGS = 0V
40
1.3
Reverse Recovery Time
Reverse Recovery Charge
trr
Qrr
VGS = 0V, dlF/dt = 100A / μS
1Pulse test : Pulse Width 300 msec, Duty Cycle 2.
41
35
2Independent of operating temperature.
UNIT
V
nA
mA
A
S
pF
Ω
nC
nS
A
V
nS
nC
Ver 1.1
2 2013-3-15

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P0403BD
N-Channel Enhancement Mode MOSFET
Ver 1.1
3 2013-3-15