P0550BD
N-Channel Enhancement Mode MOSFET
PARAMETER
SYMBOL
TEST CONDITIONS
LIMITS
MIN TYP MAX
STATIC
Drain-Source Breakdown Voltage
Gate Threshold Voltage
Gate-Body Leakage
V(BR)DSS
VGS(th)
IGSS
VGS = 0V, ID = 250mA
VDS = VGS, ID = 250mA
VDS = 0V, VGS = ±30V
500
2.5
4.5
±100
Gate Voltage Drain Current
IDSS
VDS = 500V, VGS = 0V , TC = 25 °C
VDS = 400V, VGS = 0V , TC = 100 °C
25
250
Drain-Source On-State
Resistance1
RDS(ON)
VGS = 10V, ID = 2.25A
1.75
Forward Transconductance1
gfs
VDS = 10V, ID = 2.25A
4
DYNAMIC
Input Capacitance
Ciss
691
Output Capacitance
Coss VGS = 0V, VDS = 25V, f = 1MHz
93
Reverse Transfer Capacitance
Total Gate Charge2
Gate-Source Charge2
Gate-Drain Charge2
Turn-On Delay Time2
Rise Time2
Turn-Off Delay Time2
Fall Time2
Crss
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
VDD = 400V, ID = 4.5A, VGS = 10V
VDD = 250V, ID = 4.5A, RG = 25Ω
12
12.1
3.7
3.6
13
22
28
20
SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS (TJ = 25 °C)
Continuous Current3
IS
Forward Voltage1
VSD IF = 4.5A, VGS = 0V
4.5
1.5
Reverse Recovery Time
Reverse Recovery Charge
trr
Qrr
IF = 4.5A, dlF/dt = 100A / ms
1Pulse test : Pulse Width 300 msec, Duty Cycle 2％.
1450
10
2Independent of operating temperature.
3Limited only by maximum temperature allowed.
UNIT
V
nA
mA
Ω
S
pF
nC
nS
A
V
nS
uC
Ver 1.1
2 2013-3-14
