P0603BDG
N-Channel Enhancement Mode MOSFET
ELECTRICAL CHARACTERISTICS (TJ = 25 °C, Unless Otherwise Noted)
PARAMETER
SYMBOL
TEST CONDITIONS
LIMITS
UNITS
MIN TYP MAX
STATIC
Drain-Source Breakdown Voltage
Gate Threshold Voltage
Gate-Body Leakage
V(BR)DSS
VGS(th)
IGSS
Zero Gate Voltage Drain Current
IDSS
On-State Drain Current1
ID(ON)
VGS = 0V, ID = 250mA
VDS = VGS, ID = 250mA
VDS = 0V, VGS = ±20V
VDS =24V, VGS = 0V
VDS =20V, VGS = 0V, TJ = 125°C
VDS = 10V, VGS = 10V
30
1 1.5
3
V
±100 nA
1
mA
25
180 A
Drain-Source On-State
Resistance1
RDS(ON)
VGS =5V, ID =20A
VGS =10V, ID =20A
5.7 9.5
mΩ
4.1 6.5
Forward Transconductance1
gfs
VDS =5V, ID =20A
55 S
DYNAMIC
Input Capacitance
Output Capacitance
Ciss
Coss
VGS = 0V, VDS = 15V, f = 1MHz
1820
531
pF
Reverse Transfer Capacitance
Crss
379
Gate Resistance
Rg VGS = 0V, VDS = 0V, f = 1MHz
2.1 Ω
Total Gate Charge2
Gate-Source Charge2
Gate-Drain Charge2
Turn-On Delay Time2
Rise Time2
Turn-Off Delay Time2
Fall Time2
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
VDS = 15V, VGS = 10V,
ID = 20A
VDS = 15V ,
ID≌20A, VGS = 10V, RGS =2.7Ω
47
7 nC
15
16
52
nS
46
12
SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS (TC = 25 °C)
Continuous Current
IS
38 A
Forward Voltage1
VSD IF = 20A, VGS = 0V
1.3 V
Reverse Recovery Time
Reverse Recovery Charge
trr
Qrr
IF = 20A, dlF/dt = 100A /ms
20 nS
8 nC
1Pulse test : Pulse Width 300 msec, Duty Cycle 2％.
2Independent of operating temperature.
REV 1.0 2 2014/5/4
