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P0603BDL
N-Channel Enhancement Mode MOSFET
PRODUCT SUMMARY
V(BR)DSS
RDS(ON)
25V 6.8mΩ @VGS = 10V
ID
68A
TO-252
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted)
PARAMETERS/TEST CONDITIONS
SYMBOL
LIMITS
Drain-Source Voltage
VDS 25
Gate-Source Voltage
VGS ±20
Continuous Drain Current1
Pulsed Drain Current2
TC = 25 °C
TC = 100 °C
ID
IDM
68
43
160
Avalanche Current
IAS 52
Avalanche Energy
L = 0.3mH
EAS
135
Power Dissipation
TC = 25 °C
TC = 100 °C
PD
50
20
Junction & Storage Temperature Range
TJ, TSTG
-55 to 150
UNITS
V
A
mJ
W
°C
THERMAL RESISTANCE RATINGS
THERMAL RESISTANCE
Junction-to-Case
Junction-to-Ambient
1Pulse width limited by maximum junction temperature.
2Limited by package.
SYMBOL
RqJC
RqJA
TYPICAL
MAXIMUM
2.5
62.5
UNITS
°C / W
Ver 1.1
1 2013-3-14

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P0603BDL
N-Channel Enhancement Mode MOSFET
ELECTRICAL CHARACTERISTICS (TJ = 25 °C, Unless Otherwise Noted)
PARAMETER
SYMBOL
TEST CONDITIONS
LIMITS
MIN TYP MAX
STATIC
Drain-Source Breakdown Voltage
Gate Threshold Voltage
Gate-Body Leakage
V(BR)DSS
VGS(th)
IGSS
VGS = 0V, ID = 250mA
VDS = VGS, ID = 250mA
VDS = 0V, VGS = ±20V
25
1.0 1.7 3.0
±250
Zero Gate Voltage Drain Current
On-State Drain Current1
IDSS
ID(ON)
VDS = 20V, VGS = 0V
VDS = 20V, VGS = 0V , TJ = 125 °C
VDS = 10V, VGS = 10V
160
1
10
Drain-Source On-State
Resistance1
Forward Transconductance1
RDS(ON)
gfs
VGS = 4.5V, ID = 35A
VGS = 10V, ID = 35A
VDS = 5V, ID = 20A
7 15
4.2 6.8
80
DYNAMIC
Input Capacitance
Ciss
2020
Output Capacitance
Coss VGS = 0V, VDS = 15V, f = 1MHz
719
Reverse Transfer Capacitance
Crss
483
Gate Resistance
Rg VGS = 0V, VDS = 0V, f = 1MHz
1.5
Total Gate Charge2
Gate-Source Charge2
Gate-Drain Charge2
Turn-On Delay Time2
Rise Time2
Turn-Off Delay Time2
Fall Time2
Qg(VGS = 10V)
Qg(VGS =
4.5V) Qgs
Qgd
td(on)
tr
td(off)
tf
VDS = 15V, VGS = 10V, ID = 35A
VDS = 15V,
ID @ 35A, VGS = 10V, RGEN = 6Ω
48.8
22.4
11.3
15.7
10
24
35
16.5
SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS (TJ = 25 °C)
Continuous Current
Forward Voltage1
IS
VSD IF = 35A, VGS = 0V
38
1.3
Reverse Recovery Time
Reverse Recovery Charge
trr
Qrr
IF = 35A, dlF/dt = 100A / μS
1Pulse test : Pulse Width 300 msec, Duty Cycle 2.
37
27.3
2Independent of operating temperature.
UNIT
V
nA
mA
A
mΩ
S
pF
Ω
nC
nS
A
V
nS
nC
Ver 1.1
2 2013-3-14

No Preview Available !

P0603BDL
N-Channel Enhancement Mode MOSFET
Ver 1.1
3 2013-3-14