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P2904BD
N-Channel Logic Level Enhancement Mode MOSFET
PRODUCT SUMMARY
V(BR)DSS
RDS(ON)
40V 29mΩ @VGS = 10V
ID
25A
TO-252
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted)
PARAMETERS/TEST CONDITIONS
SYMBOL
LIMITS
Drain-Source Voltage
VDS 40
Gate-Source Voltage
VGS ±20
Continuous Drain Current
Pulsed Drain Current1
TA= 25 °C
TA= 70 °C
ID
IDM
25
20
75
Avalanche Current
IAS 27
Avalanche Energy2
L=0.1mH
EAS
37
Power Dissipation
TC= 25 °C
TC= 70°C
PD
30
20
Operating Junction & Storage Temperature Range
Tj, Tstg
-55 to 150
UNITS
V
A
mJ
W
°C
THERMAL RESISTANCE RATINGS
THERMAL RESISTANCE
Junction-to-Case
Junction-to-Ambient
1Pulse width limited by maximum junction temperature.
SYMBOL
RqJC
RqJA
TYPICAL
MAXIMUM UNIT
4.1 S
°C / W
40
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P2904BD
N-Channel Logic Level Enhancement Mode MOSFET
ELECTRICAL CHARACTERISTICS (TJ = 25 °C, Unless Otherwise Noted)
PARAMETER
SYMBOL
TEST CONDITIONS
LIMITS
UNIT
MIN TYP MAX S
Drain-Source Breakdown Voltage
Gate Threshold Voltage
Gate-Body Leakage
Zero Gate Voltage Drain Current
On-State Drain Current1
V(BR)DSS
VGS(th)
IGSS
IDSS
ID(ON)
STATIC
VGS = 0V, ID = 250mA
VDS = VGS, ID = 250mA
VDS = 0V, VGS = ±20V
40
2 2.4
3
V
±250 nA
VDS =32V, VGS = 0V
VDS =30V, VGS = 0V, TJ = 125°C
1
mA
10
VDS = 5V, VGS = 10V
75
A
VGS =10V, ID =10A
19 29
Drain-Source On-State Resistance1
RDS(ON)
VGS = 7V, ID = 8A
22 45
VGS = 5V, ID = 8A
26
Forward Transconductance1
gfs
VDS =5V, ID =10A
30
DYNAMIC
Input Capacitance
Ciss
1150
Output Capacitance
Coss VGS = 0V, VDS = 20V, f = 1MHz
157
Reverse Transfer Capacitance
Crss
80
Total Gate Charge2
Gate-Source Charge2
Gate-Drain Charge2
Qg
VGS = 10V
VGS = 4.5V
Qgs
Qgd
VDS =0.5V(BR)DSS,
ID = 10A
19
9
4.5
3
Gate Resistance
Turn-On Delay Time2
Rise Time2
Turn-Off Delay Time2
Fall Time2
Rg
td(on)
tr
td(off)
tf
VGS = 0V, VDS = 0V, f = 1MHz
VDS = 20V ,RL = 1Ω
ID1A, VGS = 10V,RGS = 6Ω
1.55
10
6
26
6
SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS (TJ = 25 °C)
Continuous Current
IS
Forward Voltage1
VSD IF = 10A, VGS = 0V
Reverse Recovery Time
Reverse Recovery Charge
trr
Qrr IF = 10A, dlF/dt = 100A /ms
38
29
1Pulse test : Pulse Width 300 msec, Duty Cycle 2.
2Independent of operating temperature.
50
23
1.3
S
pF
nC
Ω
nS
A
V
nS
nC
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P2904BD
N-Channel Logic Level Enhancement Mode MOSFET
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P2904BD
N-Channel Logic Level Enhancement Mode MOSFET
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P2904BD
N-Channel Logic Level Enhancement Mode MOSFET
*因为各家封装模具不同而外观略有所差异,不影响电性及Layout。
REV 1.0
5
2014/5/12