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PD515BA
P-Channel Enhancement Mode MOSFET
PRODUCT SUMMARY
V(BR)DSS
RDS(ON)
-20V
65mΩ @VGS = -4.5V
ID
-15A
TO-252
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted)
PARAMETERS/TEST CONDITIONS
SYMBOL
LIMITS
Drain-Source Voltage
VDS -20
Gate-Source Voltage
VGS ±8
Continuous Drain Current3
Pulsed Drain Current1
TC= 25 °C
TC= 100 °C
ID
IDM
-15
-9.8
-30
Avalanche Current
IAS -11
Avalanche Energy
L = 0.1mH
EAS
6
Power Dissipation
TC= 25 °C
TC= 100°C
PD
25
10
Junction & Storage Temperature Range
Tj, Tstg
-55 to 150
UNITS
V
V
A
mJ
W
°C
THERMAL RESISTANCE RATINGS
THERMAL RESISTANCE
Junction-to-Case
Junction-to-Ambient
1Pulse width limited by maximum junction temperature.
2Package limitation current is -10A.
SYMBOL
RqJC
RqJA
TYPICA
L
MAXIMUM
5
62.5
UNITS
°C / W
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PD515BA
P-Channel Enhancement Mode MOSFET
ELECTRICAL CHARACTERISTICS (TJ = 25 °C, Unless Otherwise Noted)
PARAMETER
SYMBOL
TEST CONDITIONS
LIMITS
UNITS
MIN TYP MAX
STATIC
Drain-Source Breakdown Voltage
Gate Threshold Voltage
Gate-Body Leakage
Zero Gate Voltage Drain Current
V(BR)DSS
VGS(th)
IGSS
IDSS
VGS = 0V, ID = -250mA
VDS = VGS, ID = -250mA
VDS = 0V, VGS = ±8V
VDS =-16V, VGS = 0V
VDS =-10V, VGS = 0V, TJ = 125°C
-20
-0.3
-0.7 -1
±100
-1
-10
V
nA
mA
Drain-Source On-State
Resistance1
RDS(ON)
VGS =-4.5V, ID =-2.5A
VGS =-2.5V, ID =-2A
VGS =-1.8V, ID =-1A
50 65
63 85
82 120
Forward Transconductance1
gfs VDS = -5V, ID = -2.5A
11 S
DYNAMIC
Input Capacitance
Ciss
576
Output Capacitance
Coss VGS = 0V, VDS = -10V, f = 1MHz
66
Reverse Transfer Capacitance
Crss
50
Gate Resistance
Rg VGS =0V, VDS = 0V, f = 1MHz
8
Total Gate Charge2
Gate-Source Charge2
Qg(VGS = -4.5V)
Qg(VGS = -2.5V)
Qgs
VDS =-10V,
ID = -2.5A
6.7
4
0.8
Gate-Drain Charge2
Qgd
1.8
Turn-On Delay Time2
Rise Time2
Turn-Off Delay Time2
td(on)
tr
td(off)
VDS =-10V ,ID @ -2.5A,
VGS=-4.5V,RGEN=6Ω
16
37
52
Fall Time2
tf
60
SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS (TJ = 25 °C)
Continuous Current3
IS
Forward Voltage1
VSD IF = -2.5A, VGS = 0V
Reverse Recovery Time
Reverse Recovery Charge
trr
Qrr
IF = -2.5A, dlF/dt = 100A /mS
7
1
1Pulse test : Pulse Width 300 msec, Duty Cycle 2.
2Independent of operating temperature.
3Package limitation current is -10A.
-20
-1.2
pF
Ω
nC
nS
A
V
nS
nC
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PD515BA
P-Channel Enhancement Mode MOSFET
REV 1.0
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PD515BA
P-Channel Enhancement Mode MOSFET
REV 1.0
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PD515BA
P-Channel Enhancement Mode MOSFET
*因为各家封装模具不同而外观略有所差异,不影响电性及Layout。
REV 1.0
5
2017/1/12