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P3004ND5G
N&P-Channel Enhancement Mode MOSFET
PRODUCT SUMMARY
V(BR)DSS
RDS(ON)
40V 30mΩ @VGS = 10V
-40V
55mΩ @VGS = -10V
ID
12A
-8.8A
Channel
N
P
TO-252- 5
100% Rg tested
100% UIS tested
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted)
PARAMETERS/TEST CONDITIONS
SYMBOL
CH. LIMITS
UNITS
Drain-Source Voltage
Gate-Source Voltage
N 40
VDS P -40
N ±20
VGS P ±20
V
Continuous Drain Current
Pulsed Drain Current1
TC = 25 °C
TC = 70 °C
N 12
P -8.8
ID N 8
P -5.8
N 50
IDM P -50
A
Avalanche Current
N 19
IAS P -18
Avalanche Energy
L = 0.1mH
N 20
EAS P 19
mJ
Power Dissipation
TC = 25 °C
TC = 70 °C
N3
P3
PD N 2.1
P 2.1
W
Junction & Storage Temperature Range
Lead Temperature (1/16" from case for 10 sec.)
TJ, TSTG
TL
-55 to 150
275
°C
Ver 1.0
1 2012/4/12

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P3004ND5G
N&P-Channel Enhancement Mode MOSFET
THERMAL RESISTANCE RATINGS
THERMAL RESISTANCE
SYMBOL
Junction-to-Case
RqJC
Junction-to-Ambient
RqJA
1Pulse width limited by maximum junction temperature.
2Duty cycle 1%
CHANNEL
N&P
N&P
TYPICAL
MAXIMUM UNITS
6
42 °C / W
ELECTRICAL CHARACTERISTICS (TJ = 25 °C, Unless Otherwise Noted)
PARAMETER
SYMBOL
TEST CONDITIONS
LIMITS
MIN TYP MAX
STATIC
Drain-Source Breakdown Voltage
Gate Threshold Voltage
Gate-Body Leakage
Zero Gate Voltage Drain Current
On-State Drain Current1
Drain-Source On-State
Resistance1
Forward Transconductance1
V(BR)DSS
VGS(th)
IGSS
IDSS
ID(ON)
RDS(ON)
gfs
VGS = 0V, ID = 250mA
VGS = 0V, ID = -250mA
VDS = VGS, ID = 250mA
VDS = VGS, ID = -250mA
VDS = 0V, VGS = ±20V
VDS = 0V, VGS = ±20V
VDS = 32V, VGS = 0V
VDS = -32V, VGS = 0V
VDS = 30V, VGS = 0V, TJ = 55 °C
VDS = -30V, VGS = 0V, TJ = 55 °C
VDS = 5V, VGS = 10V
VDS = -5V, VGS = -10V
VGS = 5V, ID = 6A
VGS = -5V, ID = -4.5A
VGS = 10V, ID = 7A
VGS = -10V, ID = -5.5A
VDS = 10V, ID = 7A
VDS = -10V, ID = -5.5A
DYNAMIC
N
P
N
P
N
P
N
P
N
P
N
P
N
P
N
P
N
P
40
-40
1.7 2.0 3.0
-1.7 -2.0 -3.0
±100
±100
1
-1
10
-10
50
-50
39 50
76 99
26 30
47 55
18
10
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
N
Ciss N-Channel P
VGS = 0V, VDS = 10V, f = 1MHz N
Coss
P-Channel
P
Crss VGS = 0V, VDS = -10V, f = 1MHz N
P
495 643
558 725
110 143
250 325
41 53
60 78
UNIT
V
nA
mA
A
mΩ
S
pF
Ver 1.0
2 2012/4/12

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P3004ND5G
N&P-Channel Enhancement Mode MOSFET
DYNAMIC
Gate Resistance
N
Rg VGS = 0V, VDS = 0V, f = 1MHz
P
1.8
7
Total Gate Charge2
Gate-Source Charge2
Gate-Drain Charge2
Qg
N-Channel
N
VDS = 0.5V(BR)DSS, VGS = 10V,
P
ID = 7A
N
Qgs
P-Channel
P
VDS = 0.5V(BR)DSS, VGS = -10V,
N
Qgd
ID = -5.5A
P
12
11
1.8
1.7
1.6
1.5
Turn-On Delay Time2
Rise Time2
td(on)
tr
N-Channel
VDS = 20V
ID @ 1A, VGS = 10V, RGEN = 6Ω
N
P
N
P
1.7
5.4
5.6
7.8
Turn-Off Delay Time2
Fall Time2
td(off)
tf
P-Channel
VDS = -20V
ID @ -1A, VGS = -10V, RGEN = 6Ω
N
P
N
P
7.6
16
2.8
10
SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS (TJ = 25 °C)
Forward Voltage1
VSD
IF = 7A, VGS = 0V
IF = -5.5A, VGS = 0V
N
P
Reverse Recovery Time
trr
IF = 7A, dlF/dt = 100A / mS
IF = -5.5A, dlF/dt = 100A / mS
N
P
40
50
Reverse Recovery Charge
Qrr
N 28
P 50
1Pulse test : Pulse Width 300 msec, Duty Cycle 2.
2Independent of operating temperature.
3.2
12
10
16.5
14
30
5.5
18
1.2
-1.2
Ω
nC
nS
V
nS
nC
Ver 1.0
3 2012/4/12

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P3004ND5G
N&P-Channel Enhancement Mode MOSFET
Ver 1.0
4 2012/4/12

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P3004ND5G
N&P-Channel Enhancement Mode MOSFET
Ver 1.0
5 2012/4/12