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P0603BT
N-Channel Enhancement Mode MOSFET
PRODUCT SUMMARY
V(BR)DSS
RDS(ON)
30V 5.8mΩ @VGS = 10V
ID
82A
TO-220
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted)
PARAMETERS/TEST CONDITIONS
SYMBOL
LIMITS
Drain-Source Voltage
VDS 30
Gate-Source Voltage
VGS ±20
Continuous Drain Current1
Pulsed Drain Current2
TC = 25 °C
TC = 100 °C
ID
IDM
82
52
200
Avalanche Current
IAS 34
Avalanche Energy
L = 0.3mH
EAS
170
Power Dissipation
TC = 25 °C
TC = 100 °C
PD
69
27
Operating Junction & Storage Temperature Range
Lead Temperature ( 1/16" from case for 10 sec.)
TJ, TSTG
TL
-55 to 150
275
UNITS
V
A
mJ
W
°C
THERMAL RESISTANCE RATINGS
THERMAL RESISTANCE
Junction-to-Case
Junction-to-Ambient
1Pulse width limited by maximum junction temperature.
SYMBOL
RqJC
RqJA
TYPICAL
MAXIMUM
1.8
62.5
UNITS
°C / W
Ver 1.0
1 2012/4/16

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P0603BT
N-Channel Enhancement Mode MOSFET
ELECTRICAL CHARACTERISTICS (TJ = 25 °C, Unless Otherwise Noted)
PARAMETER
SYMBOL
TEST CONDITIONS
LIMITS
MIN TYP MAX
STATIC
Drain-Source Breakdown Voltage
Gate Threshold Voltage
Gate-Body Leakage
V(BR)DSS
VGS(th)
IGSS
Zero Gate Voltage Drain Current
IDSS
On-State Drain Current1
Drain-Source On-State
Resistance1
Forward Transconductance1
ID(ON)
RDS(ON)
gfs
VGS = 0V, ID = 250mA
VDS = VGS, ID = 250mA
VDS = 0V, VGS = ±20V
VDS = 20V, VGS = 0V
VDS = 20V, VGS = 0V , TJ = 125 °C
VDS = 10V, VGS = 10V
VGS = 4.5V, ID = 24A
VGS = 10V, ID = 30A
VDS = 5V, ID = 20A
30
1 1.7 3.0
±250
1
10
200
6.23 9.00
4.24 5.80
90
DYNAMIC
Input Capacitance
Output Capacitance
Ciss
Coss
VGS = 0V, VDS = 15V, f = 1MHz
2260
504
Reverse Transfer Capacitance
Crss
345
Gate Resistance
Rg VGS = 0V, VDS = 0V, f = 1MHz
1.43
Total Gate Charge2
Qg
48
Gate-Source Charge2
Qgs VDS = 15V, VGS = 10V, ID = 30A
8
Gate-Drain Charge2
Qgd
13
Turn-On Delay Time2
td(on)
23
Rise Time2
tr VDD = 15V,
36
Turn-Off Delay Time2
td(off)
ID @ 25A, VGS = 10V, RGEN = 25Ω
88
Fall Time2
tf
35
SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS (TJ = 25 °C)
Continuous Current
IS
Forward Voltage1
VSD IF = IS, VGS = 0V
Reverse Recovery Time
trr
55
Reverse Recovery Charge
Qrr
25
1Pulse test : Pulse Width 300 msec, Duty Cycle 2.
2Independent of operating temperature.
53
1.3
UNIT
V
nA
mA
A
mΩ
S
pF
Ω
nC
nS
A
V
nS
nC
Ver 1.0
2 2012/4/16

No Preview Available !

P0603BT
N-Channel Enhancement Mode MOSFET
Ver 1.0
3 2012/4/16