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P0610BTF
N-Channel Enhancement Mode MOSFET
PRODUCT SUMMARY
V(BR)DSS
RDS(ON)
100V
6.5mΩ @VGS = 10V
ID
66A
TO-220F
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted)
PARAMETERS/TEST CONDITIONS
SYMBOL
LIMITS
Drain-Source Voltage
VDS 100
Gate-Source Voltage
VGS ±20
Continuous Drain Current
Pulsed Drain Current1
TC = 25 °C
TC = 100 °C
ID
IDM
66
41
200
Avalanche Current
IAS 40
Avalanche Energy
L = 1mH EAS 832
Power Dissipation
TC = 25 °C
TC = 100 °C
PD
62.5
25
Operating Junction & Storage Temperature Range
TJ, Tstg
-55 to 150
UNITS
V
A
mJ
W
°C
THERMAL RESISTANCE RATINGS
THERMAL RESISTANCE
Junction-to-Case
Junction-to-Ambient
1Pulse width limited by maximum junction temperature.
SYMBOL
RqJC
RqJA
TYPICAL
MAXIMUM
2
62.5
UNITS
°C / W
REV 1.1
1 2015/7/30

No Preview Available !

P0610BTF
N-Channel Enhancement Mode MOSFET
ELECTRICAL CHARACTERISTICS (TJ = 25 °C, Unless Otherwise Noted)
PARAMETER
SYMBOL
TEST CONDITIONS
LIMITS
UNITS
MIN TYP MAX
STATIC
Drain-Source Breakdown
Voltage
Gate Threshold Voltage
Gate-Body Leakage
Zero Gate Voltage Drain Current
V(BR)DSS
VGS(th)
IGSS
IDSS
VGS = 0V, ID = 250mA
VDS = VGS, ID = 250mA
VDS = 0V, VGS = ±20V
VDS = 80V, VGS = 0V
VDS = 80V, VGS = 0V, TJ = 125 °C
100
1.3
1.8 2.3
±100
1
10
V
nA
mA
Drain-Source On-State
Resistance1
Forward Transconductance1
RDS(ON)
gfs
VGS = 4.5V, ID = 20A
VGS = 10V , ID = 20A
VDS = 5V, ID = 20A
68
5.4 6.5
133 S
DYNAMIC
Input Capacitance
Ciss
6300
Output Capacitance
Coss VGS = 0V, VDS = 25V, f = 1MHz
744
Reverse Transfer Capacitance
Crss
219
Gate Resistance
Rg VGS = 0V, VDS = 0V, f = 1MHz
1.3
Total Gate Charge2
Gate-Source Charge2
Qg(VGS=10V)
Qg(VGS=4.5V)
Qgs
VDS = 50V,ID = 20A
120
63
19.5
Gate-Drain Charge2
Qgd
38
Turn-On Delay Time2
td(on)
21
Rise Time2
Turn-Off Delay Time2
tr
td(off)
VDS = 50V , ID @ 20A,
VGS = 10V, RGEN =6Ω
61
54
Fall Time2
tf
58
SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS (TJ = 25 °C)
Continuous Current
IS
Forward Voltage1
VSD IF = 20A, VGS = 0V
Diode Reverse Recovery Time
Diode Reverse Recovery Charge
trr
Qrr
IF=20A,dlF/dt = 100A / mS
65
176
1Pulse test : Pulse Width 300 msec, Duty Cycle 2.
2Independent of operating temperature.
52
1.2
pF
Ω
nC
nS
A
V
nS
uC
REV 1.1
2 2015/7/30

No Preview Available !

P0610BTF
N-Channel Enhancement Mode MOSFET
REV 1.1
3 2015/7/30