P0470ED.pdf 데이터시트 (총 4 페이지) - 파일 다운로드 P0470ED 데이타시트 다운로드

No Preview Available !

NIKO-SEM
N-Channel Enhancement Mode
P0470ED
Field Effect Transistor
TO-252
Halogen-Free & Lead-Free
PRODUCT SUMMARY
V(BR)DSS
RDS(ON)
700V
2.9Ω
ID
4A
D
G
S
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted)
PARAMETERS/TEST CONDITIONS
SYMBOL
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current2
Pulsed Drain Current1
Avalanche Current 3
Avalanche Energy3
TC = 25 °C
TC = 100 °C
VDS
VGS
ID
IDM
IAS
EAS
Power Dissipation
TC = 25 °C
TC = 100 °C
Operating Junction & Storage Temperature Range
PD
Tj, Tstg
1. GATE
2. DRAIN
3. SOURCE
LIMITS
700
±30
4
2.4
16
2
20
78
31
-55 to 150
UNITS
V
V
A
mJ
W
°C
THERMAL RESISTANCE RATINGS
THERMAL RESISTANCE
SYMBOL
Junction-to-Case
RJC
Junction-to-Ambient
RJA
1Pulse width limited by maximum junction temperature.
2Limited only by maximum temperature allowed
3VDD = 50V, L = 10mH ,Starting TJ = 25°C
TYPICAL
MAXIMUM
1.6
62.5
UNITS
°C / W
ELECTRICAL CHARACTERISTICS (TJ = 25 °C, Unless Otherwise Noted)
PARAMETER
SYMBOL
TEST CONDITIONS
STATIC
LIMITS
UNIT
MIN TYP MAX
Drain-Source Breakdown Voltage
Gate Threshold Voltage
Gate-Body Leakage
Gate Voltage Drain Current
V(BR)DSS
VGS(th)
VGS = 0V, ID = 250A
VDS = VGS, ID = 250A
700
V
23
4
IGSS VDS = 0V, VGS = ±30V
±100 nA
VDS = 700V, VGS = 0V , TC = 25 °C
IDSS
VDS = 560V, VGS = 0V , TC = 125 °C
1
A
10
REV 1.0
1
F-47-5

No Preview Available !

NIKO-SEM
N-Channel Enhancement Mode
P0470ED
Field Effect Transistor
TO-252
Halogen-Free & Lead-Free
Drain-Source On-State
Resistance1
Forward Transconductance1
RDS(ON)
gfs
VGS = 10V, ID = 2A
VDS = 10V, ID = 2A
DYNAMIC
2.4
7.2
Input Capacitance
Output Capacitance
Ciss
Coss
VGS = 0V, VDS = 25V, f = 1MHz
662
61
Reverse Transfer Capacitance
Crss
6
Total Gate Charge2
Qg
15.6
Gate-Source Charge2
Gate-Drain Charge2
Qgs VDD = 560V, ID = 4A, VGS = 10V
Qgd
3.6
6
Turn-On Delay Time2
Rise Time2
Turn-Off Delay Time2
Fall Time2
td(on)
tr
td(off)
tf
VDD = 350V, ID = 4A, RG= 6Ω
36
13.3
17
12.2
SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS (TJ = 25 °C)
Continuous Current
Forward Voltage1
IS
VSD IF =4A, VGS = 0V
Reverse Recovery Time
Reverse Recovery Charge
trr
IF = 4A, dlF/dt = 100A / S
Qrr
1Pulse test : Pulse Width 300 sec, Duty Cycle 2.
2Independent of operating temperature.
352
2.4
2.9
4
1
Ω
S
pF
nC
nS
A
V
nS
uC
REV 1.0
2
F-47-5

No Preview Available !

NIKO-SEM
N-Channel Enhancement Mode
P0470ED
Field Effect Transistor
TO-252
Halogen-Free & Lead-Free
Output Characteristics
5
VGS=10V
VGS=9V
VGS=8V
4 VGS=7V
VGS=6V
VGS=5V
Transfer Characteristics
4
3
3
2
25
2
VGS=4V
1
1
125
-20
0
0 3 6 9 12
VDS, Drain-To-Source Voltage(V)
On-Resistance VS Gate-To-Source
4.00Voltage
3.50
3.00
2.50
2.00
ID=4A
1.50
1.00
2
4 6 8 10
VGS, Gate-To-Source Voltage(V)
On-Resistance VS Temperature
2.9
2.4
1.9
1.4
0.9 VGS=10V
ID=4A
0.4
-50
-25 0
25 50 75 100 125
TJ , Junction Temperature(˚C)
150
0
02468
VGS, Gate-To-Source Voltage(V)
On-Resistance VS Drain Current
5
4
3
VGS=10V
2
1
0
012345
ID , Drain-To-Source Current(A)
Capacitance Characteristic
1200
1000
800
CISS
600
400
200
0
0
COSS
CRSS
5 10 15 20 25 30
VDS, Drain-To-Source Voltage(V)
REV 1.0
3
F-47-5