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APTJC120AM25VCT1AG
Phase leg
SiC Power Module
VDSX = 1200V
RDSon = 25 mΩ max @ Tj = 25 °C
ID = 50 A @ Tc = 50 °C
Application
Welding converters
Switched Mode Power Supplies
Uninterruptible Power Supplies
Motor control
Features
SiC JFET, Normally off
(4* SJEC120R100 in parallel per switch)
Pins 7/8; 9/10; 11/12 must be shorted
together
SiC Schottky Diode
(3* SDC10S120 in parallel per switch)
- Zero reverse recovery
- Zero forward recovery
- Temperature-independent switching behavior
- Positive temperature coefficient on VF
Very low stray inductance
Internal RC decoupling snubber
High level of integration
AlN substrate for improved thermal performance
Internal thermistor for temperature monitoring
Semisouth driver board (SGDR2500P2) recommended for this
module)
Benefits
Outstanding performance at high-frequency operation
Direct mounting to heatsink (isolated package)
Low junction-to-case thermal resistance
Solderable terminals for both power and signal for easy PCB
mounting
Low profile
RoHS Compliant
All ratings @ Tj = 25 °C unless otherwise specified
These Devices are sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed. See application note
APT0502 on www.microsemi.com
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APTJC120AM25VCT1AG
Electrical Characteristics
Symbol Characteristic
Test Conditions
VDSX
Drain-Source & Drain-Gate Blocking
Voltage
VGS 0V, ID < IDSS
Min Typ Max Unit
1200
V
IGL Total Gate-Source Leakage
VGS > -15 V, VDS = 0 V
2.4 mA
IDSS Off -State Drain Current
VGS -5 V, VDS = 1200 V
1.6 mA
RDS(on) Drain-Source On-state Resistance
VGS = 2.5V, ID = 20 A
25 mΩ
RG Internal Gate Resistance (per JFET) Drain-source shorted, f= 1MHz
1.5 Ω
Vth Threshold Voltage
VDS = 1V, IDS = 300 mA
0.75 1.00 1.25 V
ID Continuous Drain Current
Tc = 50°C, TJ=125°C
Tc = 80°C, TJ=125°C
50
A
37
PD Maximum Power Dissipation
180 W
SiC diode ratings and characteristics
Symbol Characteristic
VRRM Maximum Peak Repetitive Reverse Voltage
IR Reverse Leakage Current
IF(AV)
VF
Continuous Forward Current
Diode Forward Voltage
QC Total Capacitive Charge
C Total Capacitance
Test Conditions
Min Typ Max Unit
1200
V
VR = 1200 V
Tj = 25 °C
Tj = 175 °C
Tc < 145 °C
IF = 30 A
Tj = 25 °C
Tj = 175 °C
IF = 30 A, VR = 400 V
di/dt = 1500 A/µs
30
600
300
µA
30 A
1.6 1.8
2.4 2.9
V
120 nC
f = 100 kHz, VR = 1 V
f = 100 kHz, VR = 300 V
f = 100 kHz, VR = 600 V
2300
144
100
pF
Output resistance and capacitor characteristics
Symbol Characteristic
R3 Input impedance
R3tol Tolerance
PD3 Power dissipation
C3 Ceramic Capacitor value
C3tol Tolerance
Urdc3 Rated DC voltage
Min Typ Max Unit
4Ω
5%
5W
4.7 nF
10 %
1000
V
Input resistance and capacitor characteristics
Symbol Characteristic
Ri Input impedance
Ritol Tolerance
i=1, 2
PDi Power dissipation
Ci Ceramic Capacitor value
Citol Tolerance
i=1, 2
Urdci Rated DC voltage
Min Typ Max Unit
1Ω
5%
1W
15 nF
10 %
50 V
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APTJC120AM25VCT1AG
Temperature sensor NTC
Symbol Characteristic
R25
ΔR25/R25
ΔB/B
Resistance @ 25 °C
Resistance tolerance
Beta tolerance
B 25/100 T25 = 298.16 K
RT
=
R25
exp
B25
⎢⎣
/ 100
⎜⎜⎝⎛
1
T25
1
T
⎟⎟⎠⎞⎥⎥⎦⎤
T: Thermistor temperature
RT: Thermistor value at T
Min Typ Max Unit
22 kΩ
5
3
%
3980
K
Thermal and package characteristics
Symbol Characteristic
Min Typ Max Unit
RthJC Junction to Case Thermal Resistance
JFET
Diode
0.7
0.9
°C/W
VISOL
TJ
TSTG
TC
Torque
RMS Isolation Voltage, any terminal to case t =1 min, I isol < 1 mA, 50/60 Hz
Operating junction temperature range
Storage Temperature Range
Operating Case Temperature
Mounting torque
To heat sink M4
4000
-40
-40
-40
2.5
V
150
125 °C
100
4.7 N.m
Wt Package Weight
80 g
SP1 Package outline (dimensions in mm)
See application note 1904 - Mounting Instructions for SP1 Power Modules on www.microsemi.com
Microsemi reserves the right to change, without notice, the specifications and information contained herein
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