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NIKO-SEM
Dual N-Channel Enhancement Mode
P0303YK
Field Effect Transistor
PDFN 5x6P
Halogen-Free & Lead-Free
PRODUCT SUMMARY
V(BR)DSS
RDS(ON)
Q2 30V 3.5mΩ
Q1 30V 9mΩ
ID
79A
42A
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted)
PARAMETERS/TEST CONDITIONS
SYMBOL
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current3
Pulsed Drain Current1
TC = 25 °C
TC = 100 °C
Continuous Drain Current
Avalanche Current
TA = 25 °C
TA = 70 °C
Avalanche Energy
L = 0.1mH
Power Dissipation
TC = 25 °C
TC = 100 °C
Power Dissipation
TA = 25 °C
TA = 70 °C
Operating Junction & Storage Temperature Range
VDS
VGS
ID
IDM
ID
IAS
EAS
PD
PD
Tj, Tstg
1 : G1
2,3,4 : D1
5,6,7 : S2
8 : G2
9 : S1/D2
Q2 Q1
30 30
±20 ±20
79 42
50 27
160 120
20 11
16 9
49 24
120 28
37 27
15 10
2.5 2
1.6 1.2
-55 to 150
UNITS
V
V
A
mJ
W
W
°C
THERMAL RESISTANCE RATINGS
THERMAL RESISTANCE
SYMBOL
TYPICAL
MAXIMUM
UNITS
Junction-to-Ambient2
Junction-to-Case
RJA
RJA
RJC
RJC
Q2
Q1
Q2
Q1
50
62.5
3.3
°C / W
4.6
1Pulse width limited by maximum junction temperature TJ(MAX)=150°C.
2The value of RθJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air
3ePnavcikroangme elimntitwaittihonTcAu=r2re5n°Ct :.QT1h=e3v5aAlu,Qe2in=3a7nAy given application depends on the user's specific board design.
REV 0.9
Mar-08-2012
1

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NIKO-SEM
Dual N-Channel Enhancement Mode
P0303YK
Field Effect Transistor
PDFN 5x6P
Halogen-Free & Lead-Free
ELECTRICAL CHARACTERISTICS (TJ = 25 °C, Unless Otherwise Noted)
PARAMETER
SYMBOL
TEST CONDITIONS
STATIC
LIMITS
MIN TYP MAX
UNIT
Drain-Source Breakdown Voltage
Gate Threshold Voltage
Gate-Body Leakage
Zero Gate Voltage Drain Current
Drain-Source On-State
Resistance1
Forward Transconductance1
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
Total Gate Charge2
Gate-Source Charge2
Gate-Drain Charge2
V(BR)DSS
VGS = 0V, ID = 250A
Q2
Q1
VGS(th)
VDS = VGS, ID = 250A
Q2
Q1
Q2
IGSS
VDS = 0V, VGS = ±20V
Q1
VDS = 24V, VGS = 0V
Q2
Q1
IDSS
VDS = 20V, VGS = 0V,
Q2
TJ = 55 °C
Q1
RDS(ON)
gfs
VGS =4.5V, ID = 16A
VGS =4.5V, ID = 9A
VGS = 10V, ID = 20A
VGS = 10V, ID = 11A
VDS = 5V, ID = 20A
VDS = 5V, ID = 11A
Q2
Q1
Q2
Q1
Q2
Q1
DYNAMIC
Ciss
Q2
Q1
Q2
Coss VGS = 0V, VDS = 15V, f = 1MHz Q1
Q2
Crss
Q1
Q2
Rg VGS = 0V, VDS = 0V, f = 1MHz Q1
VGS = 10V
Qg
VGS = 4.5V
Qgs
Qgd
Q2
VDS = 15V , VGS = 10V,
ID = 20A
Q1
VDS = 15V , VGS = 10V,
ID = 11A
Q2
Q1
Q2
Q1
Q2
Q1
Q2
Q1
30
30
1 1.5
3
V
1 1.6 3
±100
nA
±100
1
1
10 A
10
3.7 4.5
9.6 14.5
3.1 3.5 mΩ
7.3 9
73 S
55
2810
850
336
128
321
115
0.9
2.1
63.3
23
35
12.3
10
3.1
15
7
pF
Ω
nC
REV 0.9
Mar-08-2012
2

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NIKO-SEM
Dual N-Channel Enhancement Mode
P0303YK
Field Effect Transistor
PDFN 5x6P
Halogen-Free & Lead-Free
Turn-On Delay Time2
Rise Time2
Turn-Off Delay Time2
Fall Time2
td(on)
tr
td(off)
tf
Q2
Q2 Q1
VDS = 15V ,
Q2
ID 20A, VGS = 10V, RGEN =6Ω Q1
Q1 Q2
VDS = 15V ,
Q1
ID 11A, VGS = 10V, RGEN =6Ω Q2
Q1
27
18
14
10
59
36
20
15
nS
SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS (TJ = 25 °C)
Continuous Current3
IS
Q2
Q1
79 A
42
Forward Voltage1
VSD
IF =20A, VGS = 0V
IF = 11A, VGS = 0V
Reverse Recovery Time
Reverse Recovery Charge
trr
Q2
IF = 20A, dlF/dt = 100A / S
Q1
Qrr IF = 11A, dlF/dt = 100A / S
1Pulse test : Pulse Width 300 sec, Duty Cycle 2.
2Independent of operating temperature.
3Package limitation current :Q1=35A,Q2=37A
Q2
Q1
Q2
Q1
Q2
Q1
1
V
1.2
28 nS
17
15
nC
5
REV 0.9
Mar-08-2012
3