P0603YK.pdf , 데이터시트 , 데이타시트

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NIKO-SEM

Dual N-Channel Enhancement Mode

P0603YK

Field Effect Transistor

PDFN 5x6P

Halogen-Free & Lead-Free

PRODUCT SUMMARY

V(BR)DSS

Q2 30V

RDS(ON)

5.8mΩ

Q1 30V 9mΩ

ID3

61A

43A

ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted)

PARAMETERS/TEST CONDITIONS

SYMBOL

Drain-Source Voltage

Gate-Source Voltage

Continuous Drain Current3

Pulsed Drain Current1

TC = 25 °C

TC = 100 °C

Continuous Drain Current

Avalanche Current

TA = 25 °C

TA = 70 °C

Avalanche Energy

L = 0.1mH

Power Dissipation

TC = 25 °C

TC = 100 °C

Power Dissipation

TA = 25 °C

TA = 70 °C

Operating Junction & Storage Temperature Range

VDS

VGS

IDM

IAS

EAS

Tj, Tstg

1 : G1

2,3,4 : D1

5,6,7 : S2

8 : G2

9 : S1/D2

Q2 Q1

30 30

±20 ±20

61 43

38 21

130 120

15 11

12 9

36 25

64 31

35 27

14 10

2.3 1.9

1.5 1.2

-55 to 150

UNITS

°C

THERMAL RESISTANCE RATINGS

THERMAL RESISTANCE

SYMBOL

TYPICAL

MAXIMUM

UNITS

Junction-to-Ambient2

Junction-to-Case

RJA

RJC

°C / W

3.5

4.6

1Pulse width limited by maximum junction temperature.

2The value of RθJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air

3ePnavcikroangme elimntitwaittihonTcAu=r2re5n°Ct :.QT1h=e2v7aAlu,Qe2in=3a1nAy given application depends on the user's specific board design.

REV 0.92

C-35-3

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NIKO-SEM

Dual N-Channel Enhancement Mode

P0603YK

Field Effect Transistor

PDFN 5x6P

Halogen-Free & Lead-Free

ELECTRICAL CHARACTERISTICS (TJ = 25 °C, Unless Otherwise Noted)

PARAMETER

SYMBOL

TEST CONDITIONS

STATIC

LIMITS

MIN TYP MAX

UNIT

Drain-Source Breakdown Voltage

Gate Threshold Voltage

Gate-Body Leakage

Zero Gate Voltage Drain Current

Drain-Source On-State

Resistance1

Forward Transconductance1

V(BR)DSS

VGS(th)

VGS = 0V, ID = 250A

VDS = VGS, ID = 250A

Q2 30

Q1 30

Q2 1

Q1 1

1.6

1.7

IGSS

VDS = 0V, VGS = ±20V

±100 nA

±100

VDS = 24V, VGS = 0V

IDSS

VDS = 20V, VGS = 0V, TJ = 55 °C Q1

10 A

VGS =4.5V, ID = 12A

5.7 7

RDS(ON)

VGS =4.5V, ID = 9A

VGS = 10V, ID = 15A

9.7 14

4.4 5.8 mΩ

VGS = 10V, ID = 11A

7.5 9

gfs

VGS = 5V, ID = 15A

VGS = 5V, ID = 11A

Input Capacitance

Output Capacitance

Reverse Transfer Capacitance

Gate Resistance

Total Gate Charge2

Gate-Source Charge2

Gate-Drain Charge2

DYNAMIC

Ciss

Coss VGS = 0V, VDS = 15V, f = 1MHz

Crss

Rg VGS = 0V, VDS = 0V, f = 1MHz

VGS = 10V

VGS = 4.5V

Qgs

VDS=15V,VGS=10V,ID=15A

VDS=15V,VGS=10V,ID=11A

Qgd

1740

877

223

128

199

115

2.1

40.3

21.1

12.4

3.2

9.8

6.5

REV 0.92

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NIKO-SEM

Dual N-Channel Enhancement Mode

P0603YK

Field Effect Transistor

PDFN 5x6P

Halogen-Free & Lead-Free

Turn-On Delay Time2

Rise Time2

Turn-Off Delay Time2

Fall Time2

td(on)

td(off)

VDS = 15V ,

ID=15A, VGS = 10V, RGEN =6Ω

VDS = 15V ,

ID=11A, VGS = 10V, RGEN =6Ω

SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS (TJ = 25 °C)

Continuous Current3

Forward Voltage1

VSD

IF =15A, VGS = 0V

IF = 11A, VGS = 0V

Reverse Recovery Time

Reverse Recovery Charge

trr Q2

IF = 15A, dlF/dt = 100A / S

Qrr IF = 11A, dlF/dt = 100A / S

1Pulse test : Pulse Width  300 sec, Duty Cycle  2％.

2Independent of operating temperature.

3Package limitation current :Q1=27A,Q2=31A

0.83

0.87

11.7

5.1

1.3

REV 0.92

C-35-3

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NIKO-SEM

Dual N-Channel Enhancement Mode

P0603YK

Field Effect Transistor

PDFN 5x6P

Halogen-Free & Lead-Free

TYPICAL PERFORMANCE CHARACTERISTICS

Output Characteristics

VGS=10V

VGS=9V

VGS=8V

24 VGS=7V

VGS=6V

VGS=5V

VGS=4.5V

18 VGS=3.5V

VGS=3V

Transfer Characteristics

012345

VDS, Drain-To-Source Voltage(V)

Gate charge Characteristics

VDS=15V

8 ID=15A

125℃

25℃

2000

1234

VGS, Gate-To-Source Voltage(V)

Capacitance Characteristic

1600

CISS

1200

4 800

0 8 16 24 32 40

Qg , Total Gate Charge(nC)

On-Resistance VS Temperature

2.0

1.8

1.6

1.4

1.2

1.0

0.8

VGS=10V

0.6 ID=15A

0.4

-50

-25 0

25 50 75 100 125 150

TJ , Junction Temperature(˚C)

REV 0.92

400

COSS

CRSS

0 5 10 15 20 25 30

VDS, Drain-To-Source Voltage(V)

Source-Drain Diode Forward Voltage

100

150℃

25℃

0.1

0.0

0.2 0.4 0.6 0.8 1.0 1.2 1.4

VSD, Source-To-Drain Voltage(V)

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NIKO-SEM

Dual N-Channel Enhancement Mode

P0603YK

Field Effect Transistor

PDFN 5x6P

Halogen-Free & Lead-Free

Safe Operating Area

100

1 Operation in This

Area is Limited by

RDS(ON)

1ms

10ms

100ms

0.1 NOTE :

1.VGS= 10V

2.TA=25˚C

3.RθJA =53˚C/W

4.Single Pulse

0.01

0.1

1 10

VDS, Drain-To-Source Voltage(V)

100

Single Pulse Maximum Power Dissipation

Single Pulse

RθJA = 53 ˚C/W

TA=25˚C

0.001

0.01

0.1

Single Pulse Time(s)

100

Transient Thermal Response Curve

Duty cycle=0.5

0.2

0.1 0.1

0.05

0.02

0.01

single pulse

0.01

0.0001

0.001

Notes

0.01

0.1

T1 , Square Wave Pulse Duration[sec]

1.Duty cycle, D= t1 / t2

2.RthJA = 52 ℃/W

3.TJ-TA = P*RthJA(t)

4.RthJA(t) = r(t)*RthJA

100

REV 0.92

C-35-3