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NIKO-SEM
Dual N-Channel Enhancement Mode
P0603YK
Field Effect Transistor
PDFN 5x6P
Halogen-Free & Lead-Free
PRODUCT SUMMARY
V(BR)DSS
Q2 30V
RDS(ON)
5.8mΩ
Q1 30V 9mΩ
ID3
61A
43A
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted)
PARAMETERS/TEST CONDITIONS
SYMBOL
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current3
Pulsed Drain Current1
TC = 25 °C
TC = 100 °C
Continuous Drain Current
Avalanche Current
TA = 25 °C
TA = 70 °C
Avalanche Energy
L = 0.1mH
Power Dissipation
TC = 25 °C
TC = 100 °C
Power Dissipation
TA = 25 °C
TA = 70 °C
Operating Junction & Storage Temperature Range
VDS
VGS
ID
IDM
ID
IAS
EAS
PD
PD
Tj, Tstg
1 : G1
2,3,4 : D1
5,6,7 : S2
8 : G2
9 : S1/D2
Q2 Q1
30 30
±20 ±20
61 43
38 21
130 120
15 11
12 9
36 25
64 31
35 27
14 10
2.3 1.9
1.5 1.2
-55 to 150
UNITS
V
V
A
mJ
W
W
°C
THERMAL RESISTANCE RATINGS
THERMAL RESISTANCE
SYMBOL
TYPICAL
MAXIMUM
UNITS
Junction-to-Ambient2
Junction-to-Case
RJA
RJA
RJC
RJC
Q2
Q1
Q2
Q1
53
65
°C / W
3.5
4.6
1Pulse width limited by maximum junction temperature.
2The value of RθJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air
3ePnavcikroangme elimntitwaittihonTcAu=r2re5n°Ct :.QT1h=e2v7aAlu,Qe2in=3a1nAy given application depends on the user's specific board design.
REV 0.92
1
C-35-3

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NIKO-SEM
Dual N-Channel Enhancement Mode
P0603YK
Field Effect Transistor
PDFN 5x6P
Halogen-Free & Lead-Free
ELECTRICAL CHARACTERISTICS (TJ = 25 °C, Unless Otherwise Noted)
PARAMETER
SYMBOL
TEST CONDITIONS
STATIC
LIMITS
MIN TYP MAX
UNIT
Drain-Source Breakdown Voltage
Gate Threshold Voltage
Gate-Body Leakage
Zero Gate Voltage Drain Current
Drain-Source On-State
Resistance1
Forward Transconductance1
V(BR)DSS
VGS(th)
VGS = 0V, ID = 250A
VDS = VGS, ID = 250A
Q2 30
Q1 30
Q2 1
Q1 1
1.6
1.7
3
3
V
Q2
IGSS
VDS = 0V, VGS = ±20V
Q1
±100 nA
±100
VDS = 24V, VGS = 0V
Q2
Q1
IDSS
Q2
VDS = 20V, VGS = 0V, TJ = 55 °C Q1
1
1
10 A
10
VGS =4.5V, ID = 12A
Q2
5.7 7
RDS(ON)
VGS =4.5V, ID = 9A
VGS = 10V, ID = 15A
Q1
Q2
9.7 14
4.4 5.8 mΩ
VGS = 10V, ID = 11A
Q1
7.5 9
gfs
VGS = 5V, ID = 15A
VGS = 5V, ID = 11A
Q2
Q1
57
55
S
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
Total Gate Charge2
Gate-Source Charge2
Gate-Drain Charge2
DYNAMIC
Ciss
Coss VGS = 0V, VDS = 15V, f = 1MHz
Crss
Rg VGS = 0V, VDS = 0V, f = 1MHz
VGS = 10V
Qg
VGS = 4.5V
Qgs
Q2
VDS=15V,VGS=10V,ID=15A
Q1
VDS=15V,VGS=10V,ID=11A
Qgd
Q2
Q1
Q2
Q1
Q2
Q1
Q2
Q1
Q2
Q1
Q2
Q1
Q2
Q1
Q2
Q1
1740
877
223
128
199
115
1
2.1
40.3
23
21.1
12.4
6
3.2
9.8
6.5
pF
Ω
nC
REV 0.92
2
C-35-3

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NIKO-SEM
Dual N-Channel Enhancement Mode
P0603YK
Field Effect Transistor
PDFN 5x6P
Halogen-Free & Lead-Free
Turn-On Delay Time2
Rise Time2
Turn-Off Delay Time2
Fall Time2
td(on)
tr
td(off)
tf
Q2
VDS = 15V ,
ID=15A, VGS = 10V, RGEN =6Ω
Q1
VDS = 15V ,
ID=11A, VGS = 10V, RGEN =6Ω
Q2
Q1
Q2
Q1
Q2
Q1
Q2
Q1
23
20
18
12
56
41
28
22
SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS (TJ = 25 °C)
Continuous Current3
IS
Q2
Q1
Forward Voltage1
VSD
IF =15A, VGS = 0V
IF = 11A, VGS = 0V
Reverse Recovery Time
Reverse Recovery Charge
trr Q2
IF = 15A, dlF/dt = 100A / S
Q1
Qrr IF = 11A, dlF/dt = 100A / S
1Pulse test : Pulse Width 300 sec, Duty Cycle 2.
2Independent of operating temperature.
3Package limitation current :Q1=27A,Q2=31A
Q2
Q1
Q2
Q1
Q2
Q1
0.83
0.87
15
11.7
5.1
3
61
43
1.3
1.3
nS
A
V
nS
nC
REV 0.92
3
C-35-3