P0403BK.pdf 데이터시트 (총 6 페이지) - 파일 다운로드 P0403BK 데이타시트 다운로드

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NIKO-SEM
N-Channel Enhancement Mode Field
Effect Transistor
P0403BK
NPAK SOP-8
Lead-Free
PRODUCT SUMMARY
V(BR)DSS
RDS(ON)
30 4.0mΩ
ID
35A
D
G
D DDD
G : GATE
D : DRAIN
S : SOURCE
S #1 S S S G
ABSOLUTE MAXIMUM RATINGS (TC = 25 °C Unless Otherwise Noted)
PARAMETERS/TEST CONDITIONS
SYMBOL
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Pulsed Drain Current1
TC = 25 °C
TC = 70 °C
VDS
VGS
ID
IDM
Avalanche Current
Avalanche Energy
Repetitive Avalanche Energy2
Power Dissipation
Junction & Storage Temperature Range
L = 0.1mH
L = 0.05mH
TC = 25 °C
TC = 70 °C
IAR
EAS
EAR
PD
Tj, Tstg
LIMITS
30
±20
35
26
50
25
31.5
1.0
4.0
2.5
-55 to 150
UNITS
V
V
A
mJ
W
°C
THERMAL RESISTANCE RATINGS
THERMAL RESISTANCE
SYMBOL
Junction-to-Ambient
RθJA
1Pulse width limited by maximum junction temperature.
2Duty cycle 1%
TYPICAL
MAXIMUM
31
UNITS
°C / W
ELECTRICAL CHARACTERISTICS (TC = 25 °C, Unless Otherwise Noted)
PARAMETER
SYMBOL
TEST CONDITIONS
Drain-Source Breakdown Voltage
Gate Threshold Voltage
Gate-Body Leakage
Zero Gate Voltage Drain Current
Drain-Source On-State
Resistance1
Forward Transconductance1
V(BR)DSS
VGS(th)
IGSS
IDSS
RDS(ON)
gfs
STATIC
VGS = 0V, ID = 250μA
VDS = VGS, ID = 250μA
VDS = 0V, VGS = ±20V
VDS = 24V, VGS = 0V
VDS = 20V, VGS = 0V, TJ = 55 °C
VGS = 5.0V, ID = 22A
VGS = 10V, ID = 27A
VDS = 15V, ID = 27A
LIMITS
UNIT
MIN TYP MAX
30
1 1.5 3.0
V
±100 nA
1
μA
10
5.0 6.8
3.5 4.0 mΩ
85 S
1 Apr-02-2007

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NIKO-SEM
N-Channel Enhancement Mode Field
Effect Transistor
P0403BK
NPAK SOP-8
Lead-Free
DYNAMIC
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge2
Gate-Source Charge2
Gate-Drain Charge2
Turn-On Delay Time2
Rise Time2
Turn-Off Delay Time2
Fall Time2
Ciss
Coss
Crss
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
VGS = 0V, VDS = 15V, f = 1MHz
VDS = 0.5V(BR)DSS, VGS = 10V,
ID = 27A
VDS = 15V , RL = 15Ω
ID 1A, VGS = 10V, RGEN = 6Ω
5640
1290
435
42 60
17
15
33
51
125
34
SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS (TC = 25 °C)
Continuous Current
Pulsed Current3
Forward Voltage1
IS
ISM
VSD IF = IS, VGS = 0V
Reverse Recovery Time
trr IF = 3A, dlF/dt = 100A / μS
1Pulse test : Pulse Width 300 μsec, Duty Cycle 2%.
2Independent of operating temperature.
3Pulse width limited by maximum junction temperature.
6
12
1.1
60 95
pF
nC
nS
A
V
nS
REMARK: THE PRODUCT MARKED WITH “P0403BK”, DATE CODE or LOT #
2 Apr-02-2007

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NIKO-SEM
N-Channel Enhancement Mode Field
Effect Transistor
P0403BK
NPAK SOP-8
Lead-Free
Output Characteristics
50
VGS = 10thru 4V
40
30
20
10
0
0
0.010
3V
12 3 4
VDS - Drain-to-Source Voltage(V)
5
On-Resistance vs.Drain Current
0.008
0.006
0.004
VGS = 5.0V
VGS = 10V
0.002
Transfer Characteristics
50
40
30
20
TC=125° C
10
25° C
0 -55°C
0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0
VGS - Gate-to-Source Voltage(V)
On-Resistance vs.Gate-to-Source Voltage
0.030
0.024
0.018
0.012
0.006
ID = 27A
0.000
0
10
10
ID = 27A
8
6
20 30
ID - Drain Current(A)
Gate Charge
40
50
VDS = 5V
10V
15V
4
2
0
0 10 20 30 40 50
Qg - Total Gate Charge (nC)
0.000
0
2468
VGS - Gate-to-Source Voltage(V)
10
8000
7000
6000
5000
4000
3000
2000
1000
0
0
Capacitance
Ciss
f=1MHz
VGS=0V
Coss
Crss
5
10 15
20 25
VDS - Drain-to-Source Voltage(V)
30
3 Apr-02-2007