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NIKO-SEM
N-Channel Enhancement Mode
P0603BKE
Field Effect Transistor
PDFN 5x6P
Halogen-Free & Lead-Free
PRODUCT SUMMARY
V(BR)DSS
RDS(ON)
30V 5.8mΩ
ID
65A
D
G
S
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted)
PARAMETERS/TEST CONDITIONS
SYMBOL
Drain-Source Voltage
Gate-Source Voltage
TC = 25 °C
Continuous Drain Current2
TC = 100 °C
TA = 25 °C
Pulsed Drain Current1
TA = 70 °C
Avalanche Current
Avalanche Energy
L = 0.1mH
TC = 25 °C
Power Dissipation
TC = 100 °C
TA = 25 °C
TA = 70 °C
Operating Junction & Storage Temperature Range
VDS
VGS
ID
IDM
IAS
EAS
PD
Tj, Tstg
G : GATE
D : DRAIN
S : SOURCE
LIMITS
30
±20
65
41
15
12
180
35
63
41
16
2.2
1.4
-55 to 150
UNITS
V
V
A
mJ
W
°C
THERMAL RESISTANCE RATINGS
THERMAL RESISTANCE
SYMBOL
TYPICAL
MAXIMUM
UNITS
Junction-to-Ambient3
Junction-to-Case
RθJA
RθJC
55
°C / W
3
1Pulse width limited by maximum junction temperature.
2Package limitation current is 30A.
3The value of RθJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air
environment with TA =25°C. The value in any given application depends on the user's specific board design.
ELECTRICAL CHARACTERISTICS (TJ = 25 °C, Unless Otherwise Noted)
PARAMETER
SYMBOL
TEST CONDITIONS
Drain-Source Breakdown Voltage
Gate Threshold Voltage
Gate-Body Leakage
V(BR)DSS
VGS(th)
IGSS
STATIC
VGS = 0V, ID = 250µA
VDS = VGS, ID = 250µA
VDS = 0V, VGS = ±20V
LIMITS
UNIT
MIN TYP MAX
30
1 1.7
3
V
±100 nA
REV 0.91
Sep-30-2011
1

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NIKO-SEM
N-Channel Enhancement Mode
P0603BKE
Field Effect Transistor
PDFN 5x6P
Halogen-Free & Lead-Free
Zero Gate Voltage Drain Current
Drain-Source On-State
Resistance1
Forward Transconductance1
IDSS
RDS(ON)
gfs
VDS = 24V, VGS = 0V
VDS = 20V, VGS = 0V, TJ = 55 °C
VGS =4.5V, ID = 15A
VGS = 10V, ID = 20A
VDS = 5V, ID = 20A
DYNAMIC
1
10 µA
5.3 7.8
mΩ
4.2 5.8
62 S
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
Ciss
Coss
Crss
Rg
VGS = 0V, VDS = 15V, f = 1MHz
VGS = 0V, VDS = 0V, f = 1MHz
1680
246
234
0.8
pF
Ω
Total Gate Charge2
Gate-Source Charge2
Gate-Drain Charge2
Turn-On Delay Time2
Rise Time2
Turn-Off Delay Time2
Fall Time2
Qg(VGS=10V)
Qg(VGS=4.5V)
Qgs
Qgd
td(on)
tr
td(off)
tf
VDS = 0.5V(BR)DSS, VGS = 10V,
ID =20A
VDS = 15V , RL = 1.5Ω
ID 20A, VGS = 10V, RGEN =6Ω
46.4
25
6.5
14.5
26
18
40
16
nC
nS
SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS (TJ = 25 °C)
Continuous Current
Diode Forward Voltage1
IS
VSD IF = 20A, VGS = 0V
65 A
1.2 V
Reverse Recovery Time
Reverse Recovery Charge
trr
IF = 20A, dlF/dt = 100A / µS
Qrr
1Pulse test : Pulse Width 300 µsec, Duty Cycle 2.
2Independent of operating temperature.
26.6 nS
13.2 nC
REV 0.91
Sep-30-2011
2

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NIKO-SEM
N-Channel Enhancement Mode
P0603BKE
Field Effect Transistor
PDFN 5x6P
Halogen-Free & Lead-Free
Output Characteristics
80
VGS =10V
VGS =7V
70 VGS =4.5V
VGS =3.5V
Transfer Characteristics
80
70
60 60
50
50
40
30
VGS=3V
20
10
40
25
30
20
125
-20
10
0
012345
0
012345
VDS, Drain-To-Source Voltage(V)
VGS, Gate-To-Source Voltage(V)
On-Resistance VS Temperature
Capacitance Characteristic
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0.4
VGS=10V
ID=20A
0.2
-50 -25 0 25 50 75 100 125 150
TJ , Junction Temperature(˚C)
Gate charge Characteristics
2000
1800
1600
1400
1200
1000
800
600
400
200
0
0
CISS
COSS
CRSS
5 10 15 20 25 30
VDS, Drain-To-Source Voltage(V)
Source-Drain Diode Forward Voltage
10
VDS=15V
ID=20A
8
100
6
10
4
150
25
2
0
0 10 20 30 40 50
Qg , Total Gate Charge
REV 0.91
3
1
0.0 0.2 0.4 0.6 0.8 1.0 1.2
VSD, Source-To-Drain Voltage(V)
Sep-30-2011