P0502CV.pdf 데이터시트 (총 4 페이지) - 파일 다운로드 P0502CV 데이타시트 다운로드

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NIKO-SEM
N-Channel Enhancement Mode
P0502CV
Field Effect Transistor
SOP-8
Halogen-Free & Lead-Free
PRODUCT SUMMARY
V(BR)DSS
RDS(ON)
20V 5mΩ
ID
18A
D
G
S
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwis e Noted)
PARAMETERS/TEST CONDITIONS
SYMBOL
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Pulsed Drain Current1
Power Dissipation
Junction & Storage Temperature Range
TA = 25 °C
TA = 100 °C
TA = 25 °C
TA = 100 °C
VDS
VGS
ID
IDM
PD
TJ, Tstg
THERMAL RESISTANCE RATINGS
THERMAL RESISTANCE
SYMBOL
Junction-to-Ambient
RθJA
1Pulse width limited by maximum junction temperature.
TYPICAL
G: GATE
D: DRAIN
S: SOURCE
LIMITS
20
±10
18
11
70
2.5
1
-55 to 150
UNITS
V
V
A
W
°C
MAXIMUM
50
UNITS
°C / W
ELECTRICAL CHARACTERISTICS (TA = 25 °C, Unless Otherwise Noted)
PARAMETER
SYMBOL
TEST CONDITIONS
Drain-Source Breakdown Voltage
Gate Threshold Voltage
Gate-Body Leakage
Zero Gate Voltage Drain Current
Drain-Source On-State
Resistance1
Forward Transconductance1
V(BR)DSS
VGS(th)
IGSS
IDSS
RDS(ON)
gfs
STATIC
VGS = 0V, ID = 250µA
VDS = VGS, ID = 250µA
VDS = 0V, VGS = ±8V
VDS = 20V, VGS = 0V
VDS = 20V, VGS = 0V, TJ = 55 °C
VGS = 4.5V, ID = 5A
VGS = 2.5V, ID = 5A
VGS = 1.8V, ID = 5A
VDS = 5V, ID = 18A
LIMITS
MIN TYP MAX
UNIT
20
0.3 0.55 0.8
V
±100 nA
1
10 µA
4.1 5
4.75 5.7 mΩ
6.7 8.2
100 S
REV 0.93
1 Sep-27-2011

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NIKO-SEM
N-Channel Enhancement Mode
P0502CV
Field Effect Transistor
SOP-8
Halogen-Free & Lead-Free
DYNAMIC
Input Capacitance
Output Capacitance
Ciss
Coss VGS = 0V, VDS = 20V, f = 1MHz
3470
526
Reverse Transfer Capacitance
Crss
412
Gate Resistance
Total Gate Charge2
Gate-Source Charge2
Gate-Drain Charge2
Turn-On Delay Time2
Rise Time2
Turn-Off Delay Time2
Fall Time2
Rg
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
VGS = 0V, VDS = 0V, f = 1MHz
VDS = 0.5V(BR)DSS, VGS = 2.5V,
ID = 18A
VDS = 10V , RL = 15Ω
ID 1A, VGS = 4.5V, RGEN =6Ω
1.3
30
15
5
20
25
180
85
SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS (TA = 25 °C)
Continuous Current
IS
Forward Voltage1
VSD
1Pulse test : Pulse Width 300 µsec, Duty Cycle 2%.
2Independent of operating temperature.
IF = 5A, VGS = 0V
18
1.3
pF
Ω
nC
nS
A
V
REV 0.93
2 Sep-27-2011

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NIKO-SEM
N-Channel Enhancement Mode
P0502CV
Field Effect Transistor
SOP-8
Halogen-Free & Lead-Free
Output Characteristics
60 V GS = 4.5V
VGS = 2.0V
50
VGS = 2.5V
40
VGS = 1.8V
30
20
10
0
0 0.5 1.0 1.5 2.0
VDS, Drain-To-Source Voltage(V)
On-Resistance VS Temperature
RDS(ON) x 1.6
2 .5
RDS(ON) x 1.4
RDS(ON) x 1.2
RDS(ON) x 1.0
RDS(ON) x 0.8
- 50
VGS = 4.5V
ID = 5A
- 25 0 25 50 75 100 125 150
TJ , Junction Temperature(˚C)
Gate charge Characteristics
5 Characteristics
ID = 18A
V DS = 2.5 V
4
3
2
1
0
0
6
12 18
24
Qg , Total Gate Charge
REV 0.93
30
3
Transfer Characteristics
60
50
40
TJ=125°C
30
20
10
0
0.0
4200
3600
3000
2400
1800
1200
TJ=25°C
TJ=-20°C
0.5 1.0 1.5 2.0 2.5
VGS, Gate-To-Source Voltage(V)
Capacitance Characteristic
VGS= 0V, f=1 MHZ
Ciss
600 Coss
Crss
0
1 10 100
VDS, Drain-To-Source Voltage(V)
Source-Drain Diode Forward Voltage
1.0E+03
1.0E+02
1.0E+01
1.0E+00
TJ =150° C
1.0E-01
1.0E-02
TJ =25° C
1.0E-03
1.0E-04
0.7 0.9
1.1 1.3 1.5 1.7
VSD, Source-To-Drain Voltage(V)
1.9
Sep-27-2011