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2SA683 / 2SA684
PNP Silicon Epitaxial Planar Transistor
for low frequency power amplification and driver
amplification
The transistor is subdivided into three group, Q,
R and S according to its DC current gain.
On special request, these transistors can be
manufactured in different pin configurations.
Absolute Maximum Ratings (Ta = 25 OC)
Parameter
Collector Base Voltage
Collector Emitter Voltage
Emitter Base Voltage
Collector Current
Peak Collector Current
Collector Power Dissipation
Junction Temperature
Storage Temperature Range
2SA683
2SA684
2SA683
2SA684
Symbol
-VCBO
-VCEO
-VEBO
-IC
-ICP
PC
Tj
Tstg
1. Emitter 2. Collector 3. Base
TO-92 Plastic Package
Value
30
40
25
30
5
1
1.5
1
150
- 55 to + 150
Unit
V
V
V
A
A
W
OC
OC
Characteristics at Ta = 25 OC
Parameter
Symbol Min. Typ. Max. Unit
DC Current Gain
at -VCE = 10 V, -IC = 500 mA
Current Gain Group Q hFE
85
- 170 -
R hFE
120
-
240
-
S hFE
170
-
340
-
at -VCE = 5 V, -IC = 1 A
hFE 50
-
-
-
Collector Base Cutoff Current
at -VCB = 20 V
-ICBO
-
- 100 nA
Collector Base Breakdown Voltage
at -IC = 10 µA
2SA683
2SA684
-V(BR)CBO
30
40
-
-
-
-
V
Collector Emitter Breakdown Voltage
at -IC = 2 mA
2SA683
2SA684
-V(BR)CEO
25
30
-
-
-
-
V
Emitter Base Breakdown Voltage
at -IC = 10 µA
-V(BR)EBO
5
-
-
V
Collector Emitter Saturation Voltage
at -IC = 500 mA, -IB = 50 mA
-VCE(sat)
-
- 0.4 V
Base Emitter Saturation Voltage
at -IC = 500 mA, -IB = 50 mA
-VBE(sat)
-
- 1.2 V
Transition Frequency
at -VCB = 10 V, IE = 50 mA, f = 200 MHz
fT - 200 - MHz
Collector Output Capacitance
at -VCB = 10 V, IE = 0, f = 1 MHz
Cob -
- 30 pF
SEMTECH ELECTRONICS LTD.
®
Dated : 15/01/2016 CL Rev: 02

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2SA683 / 2SA684
SEMTECH ELECTRONICS LTD.
®
Dated : 15/01/2016 CL Rev: 02