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MUN2238, MMUN2238L,
MUN5238, DTC123TE,
DTC123TM3, NSBC123TF3
Digital Transistors (BRT)
R1 = 2.2 kW, R2 = 8 kW
NPN Transistors with Monolithic Bias
Resistor Network
This series of digital transistors is designed to replace a single
device and its external resistor bias network. The Bias Resistor
Transistor (BRT) contains a single transistor with a monolithic bias
network consisting of two resistors; a series base resistor and a base−
emitter resistor. The BRT eliminates these individual components by
integrating them into a single device. The use of a BRT can reduce
both system cost and board space.
Features
Simplifies Circuit Design
Reduces Board Space
Reduces Component Count
S Prefix for Automotive and Other Applications Requiring Unique
Site and Control Change Requirements; AEC-Q101 Qualified and
PPAP Capable
These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
Compliant
MAXIMUM RATINGS (TA = 25°C)
Rating
Symbol
Max
Unit
Collector−Base Voltage
VCBO
50
Vdc
Collector−Emitter Voltage
VCEO
50
Vdc
Collector Current − Continuous
IC 100 mAdc
Input Forward Voltage
VIN(fwd)
12
Vdc
Input Reverse Voltage
VIN(rev)
6
Vdc
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
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PIN CONNECTIONS
PIN 3
COLLECTOR
PIN 1
BASE
R1
(OUTPUT)
(INPUT) R2
PIN 2
EMITTER
(GROUND)
MARKING DIAGRAMS
XX MG
G
1
SC−59
CASE 318D
STYLE 1
XXX MG
G
1
SOT−23
CASE 318
STYLE 6
XX MG
G
1
XX M
1
SC−70/SOT−323
CASE 419
STYLE 3
SC−75
CASE 463
STYLE 1
XX M
1
XM 1
SOT−723
CASE 631AA
STYLE 1
SOT−1123
CASE 524AA
STYLE 1
XXX
M
G
= Specific Device Code
= Date Code*
= Pb−Free Package
(Note: Microdot may be in either location)
*Date Code orientation may vary depending up-
on manufacturing location.
© Semiconductor Components Industries, LLC, 2012
October, 2016 − Rev. 2
ORDERING INFORMATION
See detailed ordering, marking, and shipping information in
the package dimensions section on page 2 of this data sheet.
1 Publication Order Number:
DTC123T/D

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MUN2238, MMUN2238L, MUN5238, DTC123TE, DTC123TM3, NSBC123TF3
Table 1. ORDERING INFORMATION
Device
MUN2238T1G
Part Marking
6Q
Package
SC−59
(Pb−Free)
Shipping
3000 / Tape & Reel
MMUN2238LT1G, SMMUN2238LTIG*
A8R
SOT−23
3000 / Tape & Reel
(Pb−Free)
MUN5238T1G
AQ
SC−70/SOT−323
3000 / Tape & Reel
(Pb−Free)
DTC123TET1G
7R
SC−75
3000 / Tape & Reel
(Pb−Free)
DTC123TM3T5G
7C
SOT−732
8000 / Tape & Reel
(Pb−Free)
NSBC123TF3T5G
T
SOT−1123
8000 / Tape & Reel
(Pb−Free)
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging
Specifications Brochure, BRD8011/D.
*S Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC−Q101 Qualified and PPAP
Capable.
300
250
200
(1) (2) (3) (4) (5)
150
100
(1) SC−75 and SC−70/SOT323; Minimum Pad
(2) SC−59; Minimum Pad
(3) SOT−23; Minimum Pad
(4) SOT−1123; 100 mm2, 1 oz. copper trace
(5) SOT−723; Minimum Pad
50
0
−50 −25
0 25 50 75 100 125 150
AMBIENT TEMPERATURE (°C)
Figure 1. Derating Curve
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MUN2238, MMUN2238L, MUN5238, DTC123TE, DTC123TM3, NSBC123TF3
Table 2. THERMAL CHARACTERISTICS
Characteristic
THERMAL CHARACTERISTICS (SC−59) (MUN2238)
Total Device Dissipation
TA = 25°C
Derate above 25°C
Thermal Resistance,
Junction to Ambient
Thermal Resistance,
Junction to Lead
Junction and Storage Temperature Range
THERMAL CHARACTERISTICS (SOT−23) (MMUN2238L)
Total Device Dissipation
TA = 25°C
Derate above 25°C
Thermal Resistance,
Junction to Ambient
Thermal Resistance,
Junction to Lead
Junction and Storage Temperature Range
THERMAL CHARACTERISTICS (SC−70/SOT−323) (MUN5238)
Total Device Dissipation
TA = 25°C
Derate above 25°C
Thermal Resistance,
Junction to Ambient
Thermal Resistance,
Junction to Lead
Junction and Storage Temperature Range
THERMAL CHARACTERISTICS (SC−75) (DTC123TE)
Total Device Dissipation
TA = 25°C
Derate above 25°C
Thermal Resistance,
Junction to Ambient
Junction and Storage Temperature Range
THERMAL CHARACTERISTICS (SOT−723) (DTC123TM3)
Total Device Dissipation
TA = 25°C
Derate above 25°C
Thermal Resistance,
Junction to Ambient
Junction and Storage Temperature Range
1. FR−4 @ Minimum Pad.
2. FR−4 @ 1.0 x 1.0 Inch Pad.
3. FR−4 @ 100 mm2, 1 oz. copper traces, still air.
4. FR−4 @ 500 mm2, 1 oz. copper traces, still air.
Symbol
Max
Unit
(Note 1)
(Note 2)
(Note 1)
(Note 2)
(Note 1)
(Note 2)
(Note 1)
(Note 2)
(Note 1)
(Note 2)
(Note 1)
(Note 2)
(Note 1)
(Note 2)
(Note 1)
(Note 2)
(Note 1)
(Note 2)
(Note 1)
(Note 2)
(Note 1)
(Note 2)
(Note 1)
(Note 2)
(Note 1)
(Note 2)
(Note 1)
(Note 2)
(Note 1)
(Note 2)
(Note 1)
(Note 2)
(Note 1)
(Note 2)
(Note 1)
(Note 2)
PD
RqJA
RqJL
TJ, Tstg
PD
RqJA
RqJL
TJ, Tstg
PD
RqJA
RqJL
TJ, Tstg
PD
RqJA
TJ, Tstg
PD
RqJA
TJ, Tstg
230
338
1.8
2.7
540
370
264
287
−55 to +150
mW
mW/°C
°C/W
°C/W
°C
246
400
2.0
3.2
508
311
174
208
−55 to +150
mW
mW/°C
°C/W
°C/W
°C
202
310
1.6
2.5
618
403
280
332
−55 to +150
mW
mW/°C
°C/W
°C/W
°C
200
300
1.6
2.4
600
400
−55 to +150
mW
mW/°C
°C/W
°C
260
600
2.0
4.8
480
205
−55 to +150
mW
mW/°C
°C/W
°C
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MUN2238, MMUN2238L, MUN5238, DTC123TE, DTC123TM3, NSBC123TF3
Table 2. THERMAL CHARACTERISTICS
Characteristic
THERMAL CHARACTERISTICS (SOT−1123) (NSBC123TF3)
Total Device Dissipation
TA = 25°C
Derate above 25°C
Thermal Resistance,
Junction to Ambient
Thermal Resistance, Junction to Lead
Junction and Storage Temperature Range
1. FR−4 @ Minimum Pad.
2. FR−4 @ 1.0 x 1.0 Inch Pad.
3. FR−4 @ 100 mm2, 1 oz. copper traces, still air.
4. FR−4 @ 500 mm2, 1 oz. copper traces, still air.
Symbol
Max
Unit
(Note 3)
(Note 4)
(Note 3)
(Note 4)
(Note 3)
(Note 4)
(Note 3)
PD
RqJA
RqJL
TJ, Tstg
254
297
2.0
2.4
493
421
193
−55 to +150
mW
mW/°C
°C/W
°C/W
°C
Table 3. ELECTRICAL CHARACTERISTICS (TA = 25°C, unless otherwise noted)
Characteristic
Symbol Min Typ Max
Unit
OFF CHARACTERISTICS
Collector−Base Cutoff Current
(VCB = 50 V, IE = 0)
Collector−Emitter Cutoff Current
(VCE = 50 V, IB = 0)
Emitter−Base Cutoff Current
(VEB = 6.0 V, IC = 0)
Collector−Base Breakdown Voltage
(IC = 10 mA, IE = 0)
Collector−Emitter Breakdown Voltage (Note 5)
(IC = 2.0 mA, IB = 0)
ON CHARACTERISTICS
ICBO
ICEO
IEBO
V(BR)CBO
V(BR)CEO
50
50
nAdc
− 100
nAdc
− 500
mAdc
− 4.0
−−
Vdc
−−
Vdc
DC Current Gain (Note 5)
(IC = 5.0 mA, VCE = 10 V)
Collector−Emitter Saturation Voltage (Note 5)
(IC = 10 mA, IB = 1.0 mA)
Input Voltage (off)
(VCE = 5.0 V, IC = 100 mA)
Input Voltage (on)
(VCE = 0.3 V, IC = 10 mA)
Output Voltage (on)
(VCC = 5.0 V, VB = 2.5 V, RL = 1.0 kW)
Output Voltage (off)
(VCC = 5.0 V, VB = 0.25 V, RL = 1.0 kW)
Input Resistor
hFE
160 350
VCE(sat)
− 0.25
Vi(off)
− 0.6 0.5
Vi(on)
1.1 0.8
VOL
− − 0.2
VOH
4.9 −
R1 1.5 2.2 2.9
Vdc
Vdc
Vdc
Vdc
Vdc
kW
Resistor Ratio
R1/R2 − − −
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
5. Pulsed Condition: Pulse Width = 300 msec, Duty Cycle 2%.
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MUN2238, MMUN2238L, MUN5238, DTC123TE, DTC123TM3, NSBC123TF3
TYPICAL CHARACTERISTICS
MUN2238, MMUN2238L, MUN5238, DTC123TE, DTC123TM3
1
IC/IB = 10
1000
75°C
0.1 75°C
0.01
TA = −25°C
25°C
TA = −25°C
100
10
25°C
0.001
0
3.2
2.8
2.4
2.0
1.6
1.2
0.8
0.4
0
0
20 40 60 80
IC, COLLECTOR CURRENT (mA)
Figure 2. VCE(sat) vs. IC
f = 10 kHz
IE = 0 A
TA = 25°C
1
100 1
100
10
VCE = 10 V
10
IC, COLLECTOR CURRENT (mA)
100
Figure 3. DC Current Gain
75°C
25°C
1
TA = −25°C
0.1
10 20 30 40
VR, REVERSE VOLTAGE (V)
Figure 4. Output Capacitance
0.01
50 0
VO = 5 V
1 23 4
Vin, INPUT VOLTAGE (V)
5
Figure 5. Output Current vs. Input Voltage
10
VO = 0.2 V
1
25°C
TA = −25°C
75°C
0.1
0
10 20 30 40
IC, COLLECTOR CURRENT (mA)
50
Figure 6. Input Voltage vs. Output Current
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