MTC4103N8J.pdf 데이터시트 (총 13 페이지) - 파일 다운로드 MTC4103N8J 데이타시트 다운로드

No Preview Available !

CYStech Electronics Corp.
Spec. No. : C561N8J
Issued Date : 2016.12.27
Revised Date :
age No. : 1/13
N- AND P-Channel Enhancement Mode MOSFET
MTC4103N8J BVDSS
ID@VGS=10V(-10V), TA=25°C
ID@VGS=10V(-10V), TC=25°C
RDSON@VGS=10V(-10V) typ.
RDSON@VGS=4.5V(-4.5V) typ.
RDSON@VGS=4V(-4V) typ.
Features
Simple drive requirement
Low on-resistance
Fast switching speed
Pb-free lead plating and halogen-free package
N-CH
30V
4.4A
6.3A
28mΩ
52mΩ
66mΩ
P-CH
-30V
-3.8A
-5.5A
49mΩ
67mΩ
75mΩ
Equivalent Circuit
MTC4103N8J
Outline
2928-8J
GGate SSource DDrain
Pin 1
Ordering Information
Device
MTC4103N8J-0-T1-G
Package
2928-8J
(Pb-free lead plating and halogen-free package)
Shipping
3000 pcs / Tape & Reel
Environment friendly grade : S for RoHS compliant products, G for RoHS compliant and
green compound products
Packing spec, T1 : 3000 pcs / tape & reel,7” reel
Product rank, zero for no rank products
Product name
MTC4103N8J
CYStek Product Specification

No Preview Available !

CYStech Electronics Corp.
Spec. No. : C561N8J
Issued Date : 2016.12.27
Revised Date :
age No. : 2/13
Absolute Maximum Ratings (TC=25°C, unless otherwise noted)
Parameter
Symbol
Limits
N-channel P-channel
Drain-Source Breakdown Voltage
BVDSS
30
-30
Gate-Source Voltage
VGS ±20
±20
Continuous Drain Current *2 TA=25 °C, VGS=10V (-10V)
TA=70 °C, VGS=10V (-10V)
IDSM
4.4
3.5
-3.8
-3.0
Continuous Drain Current
TC=25 °C, VGS=10V (-10V)
TC=100 °C, VGS=10V (-10V)
ID
6.3
4.0
-5.5
-3.5
Pulsed Drain Current * 3
IDM 20
-20
TA=25°C, Single device operation
1.5 *2
Total Power
Dissipation
TA=70°C, Single device operation
TA=25°C, Single device value at dual operation
TA=70°C, Single device value at dual operation
PDSM
0.96 *2
1.24 *2
0.79 *2
TC=25°C
TC=100°C
PD * 1
3.75
1.88
Operating Junction and Storage Temperature Range
Tj; Tstg
-55~+175
Unit
V
A
W
°C
Thermal Data
Parameter
Max. Thermal Resistance, Junction-to-ambient, single device operation
Max. Thermal Resistance, Junction-to-ambient, single device value at dual operation
Max. Thermal Resistance, Junction-to-case
Symbol
Rth,j-a
Rth,j-c
Value
84 *2
101 *2
40
Unit
°C/W
Note : 1.The power dissipation PD is based on TJ(MAX)=175°C, using junction-to-case thermal resistance, and is more useful
in setting the upper dissipation limit for cases where additional heatsinking is used.
2. The value of RθJA is measured with the device mounted on 1 in²FR-4 board with 2 oz. copper, in a still air
environment with TA=25°C, t5s. 216°C/W when mounted on a minimum pad of 2 oz. copper. The power dissipation
PDSM is based on RθJA and the maximum allowed junction temperature of 150°C. The value in any given application
depends on the user’s specific board design.
3. Pulse width limited by junction temperature TJ(MAX)=175°C. Ratings are based on low duty cycles to keep initial
TJ=25°C.
N-Channel Electrical Characteristics (Tc=25°C, unless otherwise specified)
Symbol
Min. Typ. Max. Unit
Test Conditions
Static
BVDSS
VGS(th)
IGSS
IDSS
*RDS(ON)
*GFS
30
1
-
-
-
-
-
-
-
-
-
-
2.5
V
VGS=0V, ID=250μA
VDS=VGS, ID=250μA
-
±100
nA VGS=±20V, VDS=0V
-
-
1
10
μA
VDS=30V, VGS=0V
VDS=24V, VGS=0V, Tj=70°C
28 36
VGS=10V, ID=2A
52 73 mΩ VGS=4.5V, ID=1A
66 92
VGS=4V, ID=1A
3.1 - S VDS=10V, ID=3A
MTC4103N8J
CYStek Product Specification

No Preview Available !

Dynamic
Ciss
Coss
Crss
*td(ON)
*tr
*td(OFF)
*tf
*Qg
*Qgs
*Qgd
Body Diode
*VSD
*trr
*Qrr
-
-
-
-
-
-
-
-
-
-
-
-
-
CYStech Electronics Corp.
Spec. No. : C561N8J
Issued Date : 2016.12.27
Revised Date :
age No. : 3/13
342 -
44 - pF VDS=10V, VGS=0V, f=1MHz
41 -
5-
16.6
14.6
-
-
ns VDS=15V, ID=2A, VGS=10V, RG=1Ω
4.6 -
7.1 -
1.6 - nC VDS=24V, ID=2A, VGS=10V
1.2 -
0.89 1.2
V VGS=0V, IS=4.5A
6.2
2.8
-
-
ns
nC
IF=4.5A, VGS=0V, dIF/dt=100A/μs
*Pulse Test : Pulse Width 300μs, Duty Cycle2%
P-Channel Electrical Characteristics (Tc=25°C, unless otherwise specified)
Symbol
Min. Typ. Max. Unit
Test Conditions
Static
BVDSS
VGS(th)
IGSS
IDSS
*RDS(ON)
*GFS
-30
-1.0
-
-
-
-
-
-
-
-
-
-
-2.5
V
VGS=0V, ID=-250μA
VDS=VGS, ID=-250μA
-
±100
nA VGS=±20V, VDS=0V
-
-
-1
-10
μA
VDS=-30V, VGS=0V
VDS=-24V, VGS=0V, Tj=70°C
49 62
VGS=-10V, ID=-2A
67 90 mΩ VGS=-4.5V, ID=-1A
75 105
VGS=-4V, ID=-1A
4 - S VDS=-10V, ID=-3A
Dynamic
Ciss
Coss
Crss
*td(ON)
*tr
*td(OFF)
*tf
*Qg
*Qgs
*Qgd
Body Diode
*VSD
*trr
*Qrr
-
-
-
-
-
-
-
-
-
-
-
-
-
450 -
67 - pF VDS=-10V, VGS=0V, f=1MHz
57 -
5.6 -
20
28
-
-
ns VDS=-15V, ID=-2A, VGS=-10V, RG=1Ω
6.4 -
10.7 -
1.7 - nC VDS=-24V, ID=-2A, VGS=-10V
2-
-0.88
-1.2
V VGS=0V, IS=-3A
7.2
3.6
-
-
ns
nC
IF=-3A, VGS=0V, dIF/dt=100A/μs
*Pulse Test : Pulse Width 300μs, Duty Cycle2%
MTC4103N8J
CYStek Product Specification

No Preview Available !

CYStech Electronics Corp.
Recommended Soldering Footprint
Spec. No. : C561N8J
Issued Date : 2016.12.27
Revised Date :
age No. : 4/13
unit : mm
MTC4103N8J
CYStek Product Specification

No Preview Available !

CYStech Electronics Corp.
Spec. No. : C561N8J
Issued Date : 2016.12.27
Revised Date :
age No. : 5/13
Typical Characteristics : Q1( N-channel )
Typical Output Characteristics
20
5V
15
10V, 9V, 8V, 7V, 6V
10 4V
1.4
1.2
1
0.8
Brekdown Voltage vs Ambient Temperature
5 3.5V
VGS=3V
0
0 1 23 4 5
VDS, Drain-Source Voltage(V)
0.6 ID=250μA,
VGS=0V
0.4
-75 -50 -25 0 25 50 75 100 125 150 175
Tj, Junction Temperature(°C)
1000
Static Drain-Source On-State resistance vs Drain Current
Reverse Drain Current vs Source-Drain Voltage
1.2
1 Tj=25°C
VGS=4V
100
0.8
Tj=150°C
0.6
10
0.01
VGS=4.5V
VGS=10V
0.1 1
ID, Drain Current(A)
10
Static Drain-Source On-State Resistance vs Gate-Source
Voltage
500
450
400 ID=2A
350
300
250
200
150
100
50
0
0 2 4 6 8 10
VGS, Gate-Source Voltage(V)
0.4
0.2
0
2468
IDR, Reverse Drain Current(A)
10
Drain-Source On-State Resistance vs Junction Tempearture
2.8
VGS=10V, ID=2A
2.4 RDS(ON)@Tj=25°C : 28mΩ typ.
2
1.6
1.2
0.8 VGS=4.5V, ID=1A
RDS(ON)@Tj=25°C : 52mΩ typ.
0.4
-75 -50 -25 0 25 50 75 100 125 150 175
Tj, Junction Temperature(°C)
MTC4103N8J
CYStek Product Specification