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Transistors
2SA2079
Silicon PNP epitaxial planar type
For general amplification
Complementary to 2SC5848
Features
High forward current transfer ratio hFE
Suitable for high-density mounting and douwsizing of the equipment for
ultraminiature leadless package
Package: 0.6 mm × 1.0 mm (hight 0.39 mm)
Absolute Maximum Ratings Ta = 25°C
Parameter
Symbol
Rating
Collector-base voltage (Emitter open)
Collector-emitter voltage (Base open)
Emitter-base voltage (Collector open)
Collector current
Peak collector current
Collector power dissipation
Junction temperature
Storage temperature
VCBO
VCEO
VEBO
IC
ICP
PC
Tj
Tstg
45
45
7
100
200
100
125
55 to +125
Unit
V
V
V
mA
mA
mW
°C
°C
Unit: mm
32
1.00±0.05
1
0.39+−00..0013
0.25±0.05
0.25±0.05
1
32
0.65±0.01
0.05±0.03
1: Base
2: Emitter
3: Collector
Marking Symbol : 3D
ML3-N2 Package
Electrical Characteristics Ta = 25°C±3°C
Parameter
Symbol
Conditions
Min Typ
Collector-base voltage (Emitter open)
Collector-emitter voltage (Base open)
Emitter-base voltage (Collector open)
Collector-base cutoff current (Emitter open)
Collector-emitter cut-off current (Base open)
Forward current transfer ratio
Collector-emitter saturation voltage
Transition frequency
Collector output capacitance
(Common base, input open circuited)
VCBO
VCEO
VEBO
ICBO
ICEO
hFE
VCE(sat)
fT
Cob
IC = –10 µA, IE = 0
IC = –2 mA, IB = 0
IE = –10 µA, IC = 0
VCB = –20 V, IE = 0
VCE = –10 V, IB = 0
VCE = –10 V, IC = –2 mA
IC = –100 mA, IB = –10 mA
VCB = –10 V, IE = 1 mA, f = 200 MHz
VCB = –10 V, IE = 0, f = 1 MHz
45
45
7
180
0.2
80
2.2
Note) Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
Max
0.1
100
390
0.5
Unit
V
V
V
µA
µA
V
MHz
pF
Publication date : December 2004
SJC00326AED
1

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2SA2079
120
2SA2162_ PC-Ta
PC Ta
100
80
60
40
20
0
0 20 40 60 80 100 120 140
Ambient temperature Ta (°C)
2SA2079_IB-VBE
IB VBE
3.5
VCE = −10 V
Ta = 25°C
3.0
2.5
2.0
1.5
1.0
0.5
0
0 0.2 0.4 0.6 0.8
Base-emitter voltage VBE (V)
2SA2079_hFE-IC
hFE IC
300
Ta = 75°C
250
VCE = −10 V
25°C
200
25°C
150
100
50
0
1
10
100
1000
Collector current IC (mA)
2SA2079_IC-VCE
IC VCE
60
Ta = 25°C
50 Ta = −300 µA
250 µA
40
200 µA
30
150 µA
20
100 µA
10
50 µA
0
0 2 4 6 8 10 12
Collector-emitter voltage VCE (V)
2SA2079_IC-VBE
IC VBE
120
VCE = −10 V
100
Ta = 75°C
25°C
80
60
25°C
40
20
0
0 0.2 0.4 0.6 0.8 1.0 1.2
Base-emitter voltage VBE (V)
2SA2079_Cob-VCB
Cob VCB
10
f = 1 MHz
Ta = 25°C
1
0 8 16 24 32 40
Collector-base voltage VCB (V)
140
120
2SA2079_IC-IB
IC IB
VCE = −10 V
Ta = 25°C
100
80
60
40
20
0 0 0.2 0.4 0.6 0.8 1.0 1.2
Base current IB (mA)
2SA2079_VCE(sat)-IC
VCE(sat) IC
1
IC / IB = 10 V
0.1
Ta = 75°C
25°C
25°C
0.011
10 100
Collector current IC (mA)
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Consult our sales staff in advance for information on the following applications:
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modification and/or improvement. At the final stage of your design, purchasing, or use of the products,
therefore, ask for the most up-to-date Product Standards in advance to make sure that the latest specifica-
tions satisfy your requirements.
(6) When designing your equipment, comply with the guaranteed values, in particular those of maximum rat-
ing, the range of operating power supply voltage, and heat radiation characteristics. Otherwise, we will not
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Even when the products are used within the guaranteed values, take into the consideration of incidence of
break down and failure mode, possible to occur to semiconductor products. Measures on the systems such
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2003 SEP