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2SA2071P5
Power transistor (-60V, -3A)
Parameter
VCEO
IC
Value
-60V
-3A
lFeatures
1)High speed switching.
2)Low saturation voltage.
 (Typ.:-200mV at IC=-2A, lB=-0.2A)
3)Strong discharge power for inductive load and
  capacitance load.
4)Complements the 2SC5824
lOutline
  SOT-89
  SC-62
MPT3
lInner circuit
 
 
 
 
 
Datasheet
lApplication
HIGH SPEED SWITCHING
lPackaging specifications
Part No.
Package
Package
size
2SA2071P5
SOT-89
(MPT3)
4540
                      
Taping
code
Reel size Tape width
(mm) (mm)
Basic
ordering
unit.(pcs)
Marking
T100
180
12
1000
UN
                                                                                        
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2SA2071P5
          
                Datasheet
lAbsolute maximum ratings (Ta = 25°C)
Parameter
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Power dissipation
Junction temperature
Range of storage temperature
Symbol
VCBO
VCEO
VEBO
IC
ICP*1
PD*2
PD*3
Tj
Tstg
Values
-60
-60
-6
-3
-6
0.5
2.0
150
-55 to +150
Unit
V
V
V
A
A
W
W
lElectrical characteristics (Ta = 25°C)
Parameter
Symbol
Conditions
Collector-base breakdown
voltage
BVCBO IC = -100μA
Collector-emitter breakdown
voltage
BVCEO IC = -1mA
Emitter-base breakdown voltage BVEBO IE = -100μA
Collector cut-off current
ICBO VCB = -40V
Emitter cut-off current
IEBO VEB = -4V
Collector-emitter saturation voltage VCE(sat)*4 IC = -2A, IB = -0.2A
DC current gain
hFE VCE = -2V, IC = -100mA
Transition frequency
f
*4
T
VCE = -10V, IE = 100mA,
f = 10MHz
Output capacitance
Cob
VCB = -10V, IE = 0A,
f = 1MHz
Min.
-60
-60
-6
-
-
-
120
-
-
Values
Typ.
-
-
-
-
-
-200
-
180
50
Max.
-
-
-
-1.0
-1.0
-500
270
-
-
Unit
V
V
V
μA
μA
mV
-
MHz
pF
Turn-On time
Storage time
Fall time
ton IC = -3A,
IB1 = -300mA,
tstg
IB2 = 300mA,
VCC -25V,
tf
RL = 8.3Ω
See test circuit
- 20 -
- 150 -
- 20 -
                                        
hFE values are calssified as follows :
                              
rank Q
-
-
-
-
hFE 120-270
-
-
-
-
ns
ns
ns
*1 Pw10μs duty10%
*2 Each terminal mounted on a reference land.
*3 Mounted on a ceramic board.(40×40×0.7mm)
*4 Pulsed
                                            
 
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2SA2071P5
lElectrical characteristic curves(Ta = 25°C)
Fig.1 Grounded Emitter Propagation
    Characteristics
      Datasheet
Fig.2 Typical Output Characteristics
Fig.3 DC Current Gain
    vs. Collector Current (I)
Fig.4 DC Current Gain
    vs. Collector Current (II)
                                                                                          
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2SA2071P5
lElectrical characteristic curves(Ta = 25°C)
Fig.5 Collector-Emitter Saturation
    Voltage vs. Collector Current (I)
      Datasheet
Fig.6 Collector-Emitter Saturation
    Voltage vs. Collector Current (II)
Fig.7 Base-Emitter Saturation
    Voltage vs. Collector Current
Fig.8 Transition Frequency
                                                                                          
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2SA2071P5
lElectrical characteristic curves(Ta = 25°C)
Fig.9 Collector Output Capacitance
      Datasheet
Fig.10 Safe Operating Erea
SWITCHING TIME TEST CIRCUIT
                                                                                          
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