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JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
Digital transistors (built-in resistors)
DTC143TE/DTC143TUA
/DTC143TKA /DTC143TSA/ DTC143TCA
DIGITAL TRANSISTOR (NPN)
FEATURES
1. Built-in bias resistors enable the configuration of an inverter circuit without connecting external input
resistors(see equivalent circuit).
2. The bias resistors consist of thin-film resistors with complete isolation to allow negative biasing of the
input.They also have the advantage of almost completely eliminating parasitic effects.
3. Only the on/off conditions need to be set for operation, making device design easy.
PIN CONNENCTIONS AND MARKING
DTC143TE
DTC143TUA
SOT-523
(1) Base
(2) Emitter
(3) Collector
Addreviated symbol: 03
DTC143TKA
(1) Base
(2) Emitter
(3) Collector
SOT-23-3L
Addreviated symbol: 03
SOT-323
(1)(1B)aBsaese
(2)(2E)mEimtteitrter
(3)(3C)oClloelcletocrtor
Addreviated symbol: 03
DTAC111443ETCCAA
(1) Base
(1) Base
(2) Emitter
(2) Emitter
(3) Collector
(3) Collector
SOT-23
Addreviated symbol: 03
DTC143TSA
TO-92S
(1) Emitter
(2) Collector
(3) Base

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Absolute maximum ratings(Ta=25)
Parameter
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Collector Power dissipation
Junction temperature
Storage temperature
Symbol
V(BR)CBO
V(BR)CEO
V(BR)EBO
IC
PC
Tj
Tstg
E
150
Limits (DTC143T)
UA CA KA
50
50
5
100
200
150
-55~150
SA
300
Unit
V
V
V
mA
mW
Electrical characteristics (Ta=25)
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
Emitter cut-off current
Collector-emitter saturation voltage
DC current transfer ratio
Input resistance
Transition frequency
Symbol
V(BR)CBO
V(BR)CEO
V(BR)EBO
ICBO
IEBO
VCE(sat)
hFE
R1
fT
Min.
50
50
5
100
3.29
Typ Max. Unit
Conditions
V Ic=50µA
V Ic=1mA
V IE=50µA
0.5 µA
0.5 µA
VCB=50V
VEB=4V
0.3 V
IC=5mA,IB=0.25mA
600
4.7 6.11 K
VCE=5V,IC=1mA
250 MHz VO=10V ,IO=5mA,f=100MHz
Typical Characteristics