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WILLAS FM120-M+
NPN Digital Transistor
1.0A SURFACE MOUNT SCHOTTKY BARRIER
RECTIFIERS
-20V-
DTC144ECATHRU
200V FM1200-M+
SOD-123+ PACKAGE
Pb Free Produc
FeaturesFeatures
Batch process design, excellent power dissipation offers
Package outline
SOT-23
Pb-FreLbeoewtpteaprrcrokefvialeegrsseuerilfseaacakevamagioeluacnbutrleredenatpapnlidcathtieornmianlorredseisrttaonce.
SOD-123H
RoHS opprotimduizcet bfoar rpdascpkaicneg. code suffix ”G”
HalogeLnowfrepoewperrolodsusc,thfioghr pefaficckieinngcy.code suffix “H”
EpoxyHmigehectsurUreLnt9c4apVa-b0iliftlya,mlomw afobrwiliatyrdravotilntagge drop.
.122(3.10)
0.146(3.7)
0.130(3.3) .106(2.70) 0.012(0.3) Typ.
MoisurHeigShesnusrigtievictaypLaebvilietyl .1
Built-inGbuiaasrdrreinsgisfotor rosveernvaobltlaegethperoctoenctfiiognu.ration of an inverter circuit
withoutUcltorannheigcht-inspgeeexdtsewrnitaclhiinngp.ut resistors
The biaSsilirceosnisetpoirtsaxciaolnpslaisntaorfcthhipin, -mfilemtalresisliicsotonrjsunwcittihonc.omplete
0.071(1.8)
0.056(1.4)
iaOdsdeonvvllayaictniteMohtRHLaMnedeeogaeItHaoLlecoosd-nSgiSoh-ga/efpoTfnnrlarlefDoaoffeerndwl-ecm1aupeoic9sanocntp5yresfrdt0aoosgti0rdtlacmipu/oot2daceinvmc2teasekf8topintenrblgeanpeiatavceeocisrdlkdioynienntgeogmsluoicbemfoffenidxittnehas"aGeelsstut"iitnfnfafoigxpnrdu"pHoata.p"rrdTeashrsaoeittfyiicoanel,sffmoecahtkasiv.neg the
.080(2.04)
.070(1.78)
Epoxy : UL94-V0 rated flame retardant
0.040(1.0)
0.024(0.6)
Absolute
Cmaasexi:mMuolmderdaptliansgtics, @SO2D5-1к23H
Terminals :Plated terminals, solderable
per
,
MIL-STD-750
Symbol
Parameter
Min Typ Max
VCC Supply voltaMgeethod 2026
--- 50 ---
Unit
V
0.031(0.8) Typ.
0.031(0.8) Typ.
VIN PIonplaurtitvyol:taIngedicated by cathode band -10 --- 40
V
IO
Pd
Output current
MPoouwnetrindgissPipoastiitoinon
:
Any
--- --- 100 mA
--- 200 --- mW
Dimensions in inches and (millimeters)
Tj WJuenigchtiot n: Atepmpproerxaitmuraeted 0.011 gram
--- 150 ---
ć
Tstg Storage temperature
-55 --- 150
ć
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25℃ ambient temperature unless otherwise specified.
.008(0.20)
EleScintgrliecpahlaCsehhaarlfawcatveer,i6s0tHicz,sre@sis2ti5veкof inductive load.
 
For capacitive
Symbol
load,
derate current
Parameter
by
20%
Min Typ Max Unit
.003(0.08)
VI(off)
Input voltageRA(VTCICN=G5VS, IO=100­A)
S0Y.5MBOL -F--M120-MH---FM130-MVH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH
MVaI(rokn)ing Code
(VO=0.3V, IO=2mA)
--- --- 12 3.0 13 V 14
.10504(0.10)M16AX.
18
10
115 120
MVaOx(oinm) um ROecuutprruetnvtoPlteaag=keR(IeOv/IeI rs1e0mVoAlt/a0g.5emA)
II =Input current (VI 5V)
MIOa(xofifm) um ROMuStpVuotlctaugrerent (VC=C=50V, VI 0)
-V--RRM --- 20 0.3 30 V 40 50 60
--- --- 0.18 mA
-V--RMS --- 14 0.5 21 ­A 28 35 42
80 100 150 200
56 70
105 140
MaGxIimum DDCCBcloucrkreinngt Vgaoilntag(VeO=5V=, IO 5mA)
6V8DC --- 20 --- 30 40 50 60 .08200(0.50) 100 150 200
MaRx1imum AIvnepruatgreeFsiosrtwanacrdeRectified Current
32.I9O 47
  R2/R1
Resistance ratio
0. 8 1.0
PsuepfaTekriFmoprwosaerT(ddVrSaoOn=nurs1rgai0tetiVeoCdn,uIlfOorrr=aeed5nqmtu(J8eAE.n3D,cmfEy=Cs1s0mi0neMgtlheHohzda)) lf sine-wave --I-FSM 250
61.1 K¡
1.2
--- MHz
.012(0.30)
1.0
 
Dimens3i0ons in inches and (millimeters)
 
Typical Thermal Resistance (Note 2)
Typical Junction Capacitance (Note 1)
RΘJA
CJ
 
 
40
120
 
 
Operating Temperature Range
TJ -55 to +125
  -55 to +150
Storage Temperature Range
 
CHARACTERISTICS
Maximum Forward Voltage at 1.0A DC
TSTG
-S6u5 gtog+e1s7t5ed Solder
*MarkinSgY:M2B6OL
FM120-MH
FM130-MH
FM140-MH
FM150-MH
Pad Layout
FM160-MH FM180-MH FM1100-MH
FM1150-MH
FM1200-MH
VF
0.50
0.70
.031
.800
0.85
0.9 0.92
Maximum Average Reverse Current at @T A=25℃
Rated DC Blocking Voltage
@T A=125℃
IR
0.5
.035
.900 10
 
 
NOTES:
.079
2.000
inches
mm
1- Measured at 1 MHZ and applied reverse voltage of 4.0 VDC.
2- Thermal Resistance From Junction to Ambient
 
 
.037
.950
.037
.950
2012-02012-06
WILLAS ELECTRONIC CORP
WILLAS ELECTRONIC CORP.

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WILLAS FM120-M+
1.0NAPSUNRFDACigE iMtOaUlNTTrSaCnHOsTiTsKtYoBrARRIER
RECTIFIERS
-20V-
DTC144ECATHRU
200V FM1200-M
SOD-123+ PACKAGE
Pb Free Produc
Features
Typical CharacterPisactkicagse outline
Batch procesOsNdCehsaigranc,terxiscteicllsent power dissipation offers
OFF Characteristics
100 better reverse leakage current and thermal resistance.
Low profile surface mounted applicationVOi=n0.o3Vrder to
1
SOD-123H
optimize board space.
30 Low power loss, high efficiency.
High current capability, low forward voltage drop.
0.3
0.146(3.7)
0.130(3.3)
10 High surge capability.
Guardring for overvoltage protection.
Ultra high-speed switching.
0.1
Ta=100
3
Silicon
Lead-fr
e
e
p
e
itaxial
parts
mpleaentaerncTvah=iri2po5,nmmeetnatlasl
ilicon junct
standards
ion
of
.
1 MIL-STD-19500 /228
Ta=100
RoHS product for packing code suffix "G"
0.03
0.01
Ta=25
Halogen free product for packing code suffix "H"
0.3 Mechanical data
3E-3
Epoxy : UL94-V0 rated flame retardant
VCC=5V
0.012(0.3) Typ.
0.071(1.8)
0.056(1.4)
0.040(1.0)
0.024(0.6)
0.1
0.1
Case 0:.3Molded
pl1astic,
SOD3 -123H
10
30
1E-3
0.0
Terminals O:PUTlaPtUeTdCUteRrRmENinTalIsO,
s(molAd) erable
per
,
MIL-STD-750
Method 2026
0.00.431(0.8) Typ. 0.8
1.2
INPUT VOLTAGE VI(OFF) (V)
1.6
0.0321.(00.8) Typ.
Polarity : Indicated by cathode band
1000
Mounting
V
PositOio(OnN) :
——
Any
I
O
Weight : Approximated 0.011 gram
IO/II=20
1000
Dimensions in inches and (millimeters)
G
I
——
I
O
VO=5V
MAXIMUM RATINGS AND ELECTRICAL CHA30R0 ACTERISTICS
Ra3t0i0ngs at 25℃ ambient temperature unless otherwise specified.
Single phase half wave, 60Hz, resistive of inductive load.
100
Ta=100
Ta=25
  For capacitive load, derate current by 20%
100 RATINGS
SYMBOL FM120-MH FM13300 -MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH
Marking Code
Maximum Recurrent
PeakTRa=e1v0e0rse
Voltage
12 13 14 15 16
VRRM
20
3010 40
50
60
18 10
115 120
80 100 150 200
Maximum RMS Voltage
30
Maximum DC Blocking Voltage
Ta=25
VRMS
14
21
28
35
42
VDC
20
30
3
40
50
60
56 70 105 140
80 100 150 200
Maximum Average Forward Rectified Current
IO
1.0
      
Peak10F0.o5 rward
S1urge
Current
8.3
3
ms
single
half10sine-wave
3IF0 SM 50
1
0.1 0.3
1
3 30
10
30
100
superimposed on rated lOoaUdTP(JUETDCEUCRRmEeNtThodIO) (mA)
Typical Thermal Resistance (Note 2)
RΘJA
 
 OUTPUT CURRENT IO (mA)
40
   Typical Junction Capacitance (Note 1)
CJ
120
Operating Temperature RanCge ——
O
V
R
Stora8ge Temperature Range
TJ
TSTG
-55 to +125
400
P  —— T
Da
- 65 to +175
-55 to +150
  CHARACTERISTICS
f=1MHz
Ta=25
SYMBOL
FM120-MH
FM133500-MH
FM140-MH
FM150-MH
FM160-MH
FM180-MH
FM1100-MH
FM1150-MH
FM1200-MH
Maximum Forward Voltage at 1.0A DC
Maxim6 um Average Reverse Current at @T A=25℃
Rated DC Blocking Voltage
 
@T A=125℃
VF
IR
0.50
300
250
0.70
0.5
10
0.85
0.9 0.92
 
NOTES:
4
1- Measured at 1 MHZ and applied reverse voltage of 4.0 VDC.
DTC144ECA
200
2- Thermal Resistance From Junction to Ambient
 
 
2
150
100
50
0
0
2012-06
2012-0
5 10 15
REVERSE BIAS VOLTAGE VR (V)
20
0
0 25 50 75 100 125 150
AMBIENT WILLASTEMPERATURE Ta () ELECTRONIC COR
WILLAS ELECTRONIC CORP.