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MCP660/1/2/3/4/5/9
60 MHz, 32 V/µs Rail-to-Rail Output (RRO) Op Amps
Features:
• Gain-Bandwidth Product: 60 MHz (typical)
• Slew Rate: 32 V/µs (typical)
• Noise: 6.8 nV/Hz (typical, at 1 MHz)
• Short Circuit Current: 90 mA (typical)
• Low Input Bias Current: 4 pA (typical)
• Ease of Use:
- Unity-Gain Stable
- Rail-to-Rail Output
- Input Range including Negative Rail
- No Phase Reversal
• Supply Voltage Range: +2.5V to +5.5V
• High Output Current: ±70 mA
• Supply Current: 6.0 mA/ch (typical)
• Low-Power Mode: 1 µA/ch
• Small Packages: SOT23-5, DFN
• Extended Temperature Range: -40°C to +125°C
Typical Applications:
• Multi-Pole Active Filter
• Driving A/D Converters
• Power Amplifier Control Loops
• Line Driver
• Video Amplifier
• Barcode Scanners
• Optical Detector Amplifier
Design Aids:
• SPICE Macro Models
• FilterLab® Software
• Microchip Advanced Part Selector (MAPS)
• Analog Demonstration and Evaluation Boards
- MCP661DM-LD
• Application Notes
Description:
The Microchip Technology Inc. MCP660/1/2/3/4/5/9
family of operational amplifiers (op amps) features high
gain-bandwidth product and high slew rate. Some also
provide a Chip Select pin (CS) that supports a low-
power mode of operation. These amplifiers are
optimized for high speed, low noise and distortion,
single-supply operation with rail-to-rail output and an
input that includes the negative rail.
This family is offered in single (MCP661), single with
CS pin (MCP663), dual (MCP662) and dual with two
CS pins (MCP665), triple (MCP660), quad (MCP664)
and quad with two CS pins (MCP669). All devices are
fully specified from -40°C to +125°C.
Typical Application Circuit
VREF
RG
RF
-
VIN +
RISO
CL
MCP66X
VOUT
RL
100
10
GN = +1
GN •
1
1.1E0-p11
11.E0-01p0
1.E1-n09
Normalized Capacitance; CL/GN (F)
1.1E0-n08
High Gain-Bandwidth Op Amp Portfolio
Model Family
Channels/Package Gain-Bandwidth
MCP621/1S/2/3/4/5/9
MCP631/2/3/4/5/9
MCP651/1S/2/3/4/5/9
MCP660/1/2/3/4/5/9
1, 2, 4
1, 2, 4
1, 2, 4
1, 2, 3, 4
20 MHz
24 MHz
50 MHz
60 MHz
VOS (max.)
0.2 mV
8.0 mV
0.2 mV
8.0 mV
IQ/Ch (typ.)
2.5 mA
2.5 mA
6.0 mA
6.0 mA
2009-2014 Microchip Technology Inc.
DS20002194E-page 1

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MCP660/1/2/3/4/5/9
Package Types
MCP660
4x4 QFN*
16 15 14 13
NC 1
12 VINC+
NC 2
VDD 3
VINA+ 4
EP 11 VSS
17 10 VINB+
9 VINB-
567 8
MCP660
SOIC, TSSOP
NC 1
NC 2
NC 3
VDD 4
VINA+ 5
VINA- 6
VOUTA 7
14 VOUTC
13 VINC-
12 VINC+
11 VSS
10 VINB+
9 VINB-
8 VOUTB
MCP661
SOT-23-5
VOUT 1
5 VDD
VSS 2
VIN+ 3
4 VIN-
MCP661
SOIC
NC 1
VIN- 2
VIN+ 3
VSS 4
8 NC
7 VDD
6 VOUT
5 NC
MCP661
2x3 TDFN*
NC 1
8 CS
VIN– 2 EP 7 VDD
VIN+ 3 9 6 VOUT
VSS 4
5 NC
MCP662
MSOP, SOIC
VOUTA 1
VINA- 2
VINA+ 3
VSS 4
8 VDD
7 VOUTB
6 VINB-
5 VINB+
MCP662
3x3 DFN*
VOUTA 1
VINA- 2
VINA+ 3
VSS 4
8 VDD
EP 7 VOUTB
9 6 VINB-
5 VINB+
MCP663
SOIC
NC 1
VIN- 2
VIN+ 3
VSS 4
8 CS
7 VDD
6 VOUT
5 NC
MCP663
SOT-23-6
VOUT 1
6 VDD
VSS 2
5 CS
VIN+ 3
4 VIN-
MCP664
SOIC, TSSOP
VOUTA 1
VINA-
VINA+
VDD
2
3
4
VINB+ 5
VINB- 6
VOUTB 7
14 VOUTD
13 VIND-
12 VIND+
11 VSS
10 VINC+
9 VINC-
8 VOUTC
MCP665
3x3 DFN*
VOUTA 1
VINA- 2
VINA+ 3
VSS 4
CSA 5
10 VDD
EP
11
9 VOUTB
8 VINB-
7 VINB+
6 CSB
MCP665
MSOP
VOUTA 1
VINA- 2
VINA+ 3
VSS 4
CSA 5
10 VDD
9 VOUTB
8 VINB-
7 VINB+
6 CSB
MCP669
4x4 QFN*
16 15 14 13
VINA- 1
12 VIND+
VINA+
VDD
VINB+
2
3
4
EP 11 VSS
17 10 VINC+
9 VINC-
567 8
* Includes Exposed Thermal Pad (EP); see Table 3-1.
DS20002194E-page 2
2009-2014 Microchip Technology Inc.

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MCP660/1/2/3/4/5/9
1.0 ELECTRICAL
CHARACTERISTICS
1.1 Absolute Maximum Ratings †
VDD – VSS .......................................................................6.5V
Current at Input Pins ....................................................±2 mA
Analog Inputs (VIN+ and VIN–) †† . VSS – 1.0V to VDD + 1.0V
All Other Inputs and Outputs ......... VSS – 0.3V to VDD + 0.3V
Output Short Circuit Current ................................ Continuous
Current at Output and Supply Pins ..........................±150 mA
Storage Temperature ...................................-65°C to +150°C
Maximum Junction Temperature ................................ +150°C
ESD protection on all pins (HBM, MM)  1 kV, 200V
† Notice: Stresses above those listed under “Absolute
Maximum Ratings” may cause permanent damage to
the device. This is a stress rating only and functional
operation of the device at those or any other conditions
above those indicated in the operational listings of this
specification is not implied. Exposure to maximum rat-
ing conditions for extended periods may affect device
reliability.
†† See Section 4.1.2 “Input Voltage and Current
Limits”.
1.2 Specifications
DC ELECTRICAL SPECIFICATIONS
Electrical Characteristics: Unless otherwise indicated, TA = +25°C, VDD = +2.5V to +5.5V, VSS = GND,
VCM = VDD/3, VOUT VDD/2, VL = VDD/2, RL = 1 kto VL and CS = VSS (refer to Figure 1-2).
Parameters
Sym.
Min. Typ. Max. Units
Conditions
Input Offset
Input Offset Voltage
Input Offset Voltage Drift
VOS
VOS/TA
-8
±1.8
±2.0
+8 mV
— µV/°C TA = -40°C to +125°C
Power Supply Rejection Ratio PSRR 61 76 — dB
Input Current and Impedance
Input Bias Current
Across Temperature
Across Temperature
Input Offset Current
Common-Mode Input
Impedance
Differential Input Impedance
Common Mode
IB
IB
IB
IOS
ZCM
ZDIFF
— 6 — pA
— 130 —
TA = +85°C
— 1700 5000
TA = +125°C
— ±10 — pA
— 1013||9 — ||pF
— 1013||2 — ||pF
Common-Mode Input Voltage
Range
VCMR
VSS 
0.3
VDD
1.3
V Note 1
Common-Mode Rejection Ratio CMRR
64
79
— dB VDD = 2.5V, VCM = -0.3V to 1.2V
66 81 — dB VDD = 5.5V, VCM = -0.3V to 4.2V
Open-Loop Gain
DC Open-Loop Gain
(large signal)
Output
AOL 88 117 — dB VDD = 2.5V, VOUT = 0.3V to 2.2V
94 126 — dB VDD = 5.5V, VOUT = 0.3V to 5.2V
Maximum Output Voltage Swing VOL, VOH VSS + 25 — VDD 25 mV VDD = 2.5V, G = +2,
0.5V Input Overdrive
VSS + 50 — VDD 50
VDD = 5.5V, G = +2,
0.5V Input Overdrive
Output Short-Circuit Current
ISC ±45 ±90 ±145 mA VDD = 2.5V (Note 2)
±40 ±80 ±150
VDD = 5.5V (Note 2)
Note 1: See Figure 2-5 for temperature effects.
2: The ISC specifications are for design guidance only; they are not tested.
2009-2014 Microchip Technology Inc.
DS20002194E-page 3

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MCP660/1/2/3/4/5/9
DC ELECTRICAL SPECIFICATIONS (CONTINUED)
Electrical Characteristics: Unless otherwise indicated, TA = +25°C, VDD = +2.5V to +5.5V, VSS = GND,
VCM = VDD/3, VOUT VDD/2, VL = VDD/2, RL = 1 kto VL and CS = VSS (refer to Figure 1-2).
Parameters
Sym.
Min. Typ. Max. Units
Conditions
Power Supply
Supply Voltage
VDD 2.5 — 5.5 V
Quiescent Current per Amplifier
IQ
3 6 9 mA No Load Current
Note 1: See Figure 2-5 for temperature effects.
2: The ISC specifications are for design guidance only; they are not tested.
AC ELECTRICAL SPECIFICATIONS
Electrical Characteristics: Unless otherwise indicated, TA = +25°C, VDD = +2.5V to +5.5V, VSS = GND,
VCM = VDD/2, VOUT VDD/2, VL = VDD/2, RL = 1 kto VL, CL = 20 pF and CS = VSS (refer to Figure 1-2).
Parameters
Sym. Min. Typ. Max. Units
Conditions
AC Response
Gain-Bandwidth Product
GBWP — 60 — MHz
Phase Margin
PM — 65 —
° G = +1
Open-Loop Output Impedance
AC Distortion
ROUT
10
Total Harmonic Distortion plus Noise THD + N — 0.003 —
Differential Gain, Positive Video
(Note 1)
DG — 0.3 —
Differential Gain, Negative Video
(Note 1)
DG — 0.3 —
Differential Phase, Positive Video
(Note 1)
DP — 0.3 —
Differential Phase, Negative Video
(Note 1)
DP — 0.9 —
Step Response
% G = +1, VOUT = 2VP-P, f = 1 kHz,
VDD = 5.5V, BW = 80 kHz
% NTSC, VDD = +2.5V, VSS = -2.5V,
G = +2, VL = 0V,
DC VIN = 0V to 0.7V
% NTSC, VDD = +2.5V, VSS = -2.5V,
G = +2, VL = 0V,
DC VIN = 0V to -0.7V
° NTSC, VDD = +2.5V, VSS = -2.5V,
G = +2, VL = 0V,
DC VIN = 0V to 0.7V
° NTSC, VDD = +2.5V, VSS = -2.5V,
G = +2, VL = 0V,
DC VIN = 0V to -0.7V
Rise Time, 10% to 90%
Slew Rate
tr — 5 — ns G = +1, VOUT = 100 mVP-P
SR — 32 — V/µs G = +1
Noise
Input Noise Voltage
Eni — 14 — µVP-P f = 0.1 Hz to 10 Hz
Input Noise Voltage Density
eni — 6.8 — nV/Hz f = 1 MHz
Input Noise Current Density
ini 4 — fA/Hz f = 1 kHz
Note 1: These specifications are described in detail in Section 4.3 “Distortion”. (NTSC refers to a National
Television Standards Committee signal.)
DS20002194E-page 4
2009-2014 Microchip Technology Inc.

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MCP660/1/2/3/4/5/9
DIGITAL ELECTRICAL SPECIFICATIONS
Electrical Characteristics: Unless indicated, TA = +25°C, VDD = +2.5V to +5.5V, VSS = GND, VCM = VDD/2,
VOUT VDD/2, VL = VDD/2, RL = 1 kto VL, CL = 20 pF and CS = VSS (refer to Figures 1-1 and 2-1).
Parameters
Sym. Min. Typ. Max. Units
Conditions
CS Low Specifications
CS Logic Threshold, Low
CS Input Current, Low
VIL VSS — 0.2VDD V
ICSL — -0.1 — nA CS = 0V
CS High Specifications
CS Logic Threshold, High
VIH 0.8VDD
VDD
V
CS Input Current, High
GND Current
ICSH — -0.7 — µA CS = VDD
ISS -2 -1 — µA
CS Internal Pull-Down Resistor RPD
5
— M
Amplifier Output Leakage
IO(LEAK) — 40 — nA CS = VDD, TA = +125°C
CS Dynamic Specifications
CS Input Hysteresis
CS High to Amplifier Off Time
(output goes High Z)
VHYST
tOFF
0.25
200
CS Low to Amplifier On Time tON — 2 10
V
ns G = +1 V/V, VL = VSS
CS = 0.8VDD to VOUT = 0.1(VDD/2)
µs G = +1 V/V, VL = VSS
CS = 0.2VDD to VOUT = 0.9(VDD/2)
TEMPERATURE SPECIFICATIONS
Electrical Characteristics: Unless otherwise indicated, all limits are specified for VDD = +2.5V to +5.5V, VSS = GND.
Parameters
Sym. Min. Typ. Max. Units
Conditions
Temperature Ranges
Specified Temperature Range
Operating Temperature Range
Storage Temperature Range
Thermal Package Resistances
TA -40 — +125 °C
TA -40 — +125 °C Note 1
TA -65 — +150 °C
Thermal Resistance, 5L-SOT-23
θJA — 201.0 — °C/W
Thermal Resistance, 6L-SOT-23
θJA — 190.5 — °C/W
Thermal Resistance, 8L-3x3 DFN
θJA — 56.7 — °C/W Note 2
Thermal Resistance, 8L-MSOP
θJA — 211 — °C/W
Thermal Resistance, 8L-SOIC
θJA — 149.5 — °C/W
Thermal Resistance, 8L-2x3 TDFN
θJA — 52.5 — °C/W
Thermal Resistance, 10L-3x3 DFN
θJA — 54.0 — °C/W Note 2
Thermal Resistance, 10L-MSOP
θJA — 202 — °C/W
Thermal Resistance, 14L-SOIC
θJA — 90.8 — °C/W
Thermal Resistance, 14L-TSSOP
θJA — 100 — °C/W
Thermal Resistance, 16L-QFN
θJA — 52.1 — °C/W
Note 1: Operation must not cause TJ to exceed the Maximum Junction Temperature specification (+150°C).
2: Measured on a standard JC51-7, four-layer printed circuit board with ground plane and vias.
2009-2014 Microchip Technology Inc.
DS20002194E-page 5