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v02.0614
Typical Applications
This HMC963LC4 is ideal for:
• Point-to-Point Radios
• Point-to-Multi-Point Radios
• Military & Space
• Test Instrumentation
Functional Diagram
HMC963LC4
GaAs pHEMT MMIC LOW NOISE
AMPLIFIER, 6 - 26.5 GHz
Features
Low Noise Figure: 2.5 dB
High Gain: 22 dB
P1dB Output Power: 10 dBm
Single Supply Voltage: +3.5V @ 45mA
Output IP3: +18 dBm
50 Ohm matched Input/Output
24 Lead 4x4 mm SMT Package: 16mm²
General Description
The HMC963LC4 is a self-biased GaAs MMIC Low
Noise Amplifier housed in a leadless 4x4 mm ceramic
surface mount package. The amplifier operates
between 6 and 26.5 GHz, providing 20 dB of small
signal gain, 2.5 dB noise figure, and output IP3 of
+18 dBm, while requiring only 45 mA from a +3.5 V
supply. The P1dB output power of +10 dBm enables
the LNA to function as a LO driver for balanced, I/Q
or image reject mixers. The HMC963LC4 also fe-
atures I/Os that are DC blocked and internally mat-
ched to 50 Ohms, making it ideal for high capacity
microwave radios and VSAT applications.
Electrical Specifications, TA = +25° C, Vdd1 = Vdd2 = +3.5V, Idd = 45 mA
Parameter
Min.
Typ.
Frequency Range
6 - 26.5
Gain
16.5
22
Gain Variation over Temperature
0.03
Noise Figure [1]
2.5
Input Return Loss
10
Output Return Loss
10
Output Power for 1 dB Compression
7 10
Saturated Output Power (Psat)
12
Output Third Order Intercept (IP3)
18
Supply Current (Idd)
(Vdd = 3.5V, Vgg1 = Vgg2 = Open)
45
[1] Board loss subtracted out.
Max.
3.5
65
Units
GHz
dB
dB / °C
dB
dB
dB
dBm
dBm
dBm
mA
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HMC963* PRODUCT PAGE QUICK LINKS
Last Content Update: 02/23/2017
COMPARABLE PARTS
View a parametric search of comparable parts.
EVALUATION KITS
HMC963LC4 Evaluation Board
DOCUMENTATION
Application Notes
AN-1363: Meeting Biasing Requirements of Externally
Biased RF/Microwave Amplifiers with Active Bias
Controllers
Broadband Biasing of Amplifiers General Application Note
MMIC Amplifier Biasing Procedure Application Note
Thermal Management for Surface Mount Components
General Application Note
Data Sheet
HMC963 Data Sheet
TOOLS AND SIMULATIONS
HMC963 S-Parameter
REFERENCE MATERIALS
Quality Documentation
Package/Assembly Qualification Test Report: LC4, LC4B
(QTR: 2014-00380 REV: 01)
Semiconductor Qualification Test Report: PHEMT-A (QTR:
2013-00267)
DESIGN RESOURCES
HMC963 Material Declaration
PCN-PDN Information
Quality And Reliability
Symbols and Footprints
DISCUSSIONS
View all HMC963 EngineerZone Discussions.
SAMPLE AND BUY
Visit the product page to see pricing options.
TECHNICAL SUPPORT
Submit a technical question or find your regional support
number.
DOCUMENT FEEDBACK
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v02.0614
HMC963LC4
GaAs pHEMT MMIC LOW NOISE
AMPLIFIER, 6 - 26.5 GHz
Broadband Gain & Return Loss
30
20
10 S21
S11
0 S22
-10
-20
-30
4 6 8 10 12 14 16 18 20 22 24 26 28 30
FREQUENCY (GHz)
Gain vs. Temperature
30
26
22
18
14
10
6
+25C
+85C
-40C
8 10 12 14 16 18 20 22 24 26 28
FREQUENCY (GHz)
Input Return Loss vs. Temperature
0
-2
-4
-6
-8
-10
-12
-14
-16
-18
-20
6
+25C
+85C
-40C
8 10 12 14 16 18 20 22 24 26 28
FREQUENCY (GHz)
Output Return Loss vs. Temperature
0
-2
-4
-6
-8
-10
-12
-14
-16
-18
-20
6
+25C
+85C
-40C
8 10 12 14 16 18 20 22 24 26 28
FREQUENCY (GHz)
Noise Figure vs. Temperature [1]
6
5
+25C
+85C
-40C
4
3
2
1
0
6 8 10 12 14 16 18 20 22 24 26 28
FREQUENCY (GHz)
Output IP3 vs. Temperature
30
25
20
15
10
5
6
+25C
+85C
-40C
8 10 12 14 16 18 20 22 24 26 28
FREQUENCY (GHz)
[1] Board loss subtracted out.
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2

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v02.0614
P1dB vs. Temperature
15
+25C
13
+85C
-40C
11
9
7
5
6 8 10 12 14 16 18 20 22 24 26 28
FREQUENCY (GHz)
Reverse Isolation vs. Temperature
0
-10
-20 +25C
+85C
-30 -40C
-40
-50
-60
-70
6
8 10 12 14 16 18 20 22 24 26 28
FREQUENCY (GHz)
Power Compression @ 16 GHz
24
20
16
12
8
4 Pout
Gain
0 PAE
-4
-18 -15 -12
-9
-6
INPUT POWER (dBm)
-3
0
HMC963LC4
GaAs pHEMT MMIC LOW NOISE
AMPLIFIER, 6 - 26.5 GHz
Psat vs. Temperature
17
15
13
+25C
+85C
-40C
11
9
7
6 8 10 12 14 16 18 20 22 24 26 28
FREQUENCY (GHz)
Power Compression @ 8 GHz
24
20
16
12
8
4
0
-4
-18 -15 -12
-9
-6
INPUT POWER (dBm)
Pout
Gain
PAE
-3
0
Power Compression @ 24 GHz
24
20
16
12
8
4 Pout
Gain
0 PAE
-4
-18 -15 -12
-9
-6
INPUT POWER (dBm)
-3
0
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v02.0614
Current vs. Input Power @ 16 GHz
64
60
56
52
48
44
40
-18 -15 -12
-9
-6
INPUT POWER (dBm)
-3
0
Outline Drawing
HMC963LC4
GaAs pHEMT MMIC LOW NOISE
AMPLIFIER, 6 - 26.5 GHz
Absolute Maximum Ratings
Drain Bias Voltage
RF Input Power
Channel Temperature
Continuous Pdiss (T = 85 °C)
(derate 8 mW/°C above 85 °C)
Thermal Resistance
(Channel to ground paddle)
Storage Temperature
Operating Temperature
ESD Sensitivity (HBM)
+4V
0 dBm
150 °C
0.52 W
125 °C/W
-65 to +150 °C
-40 to +85 °C
Class 0 <150 V
ELECTROSTATIC SENSITIVE DEVICE
OBSERVE HANDLING PRECAUTIONS
NOTES:
1. PACKAGE BODY MATERIAL: ALUMINA.
2. LEAD AND GROUND PADDLE PLATING: GOLD FLASH OVER NICKEL.
3. DIMENSIONS ARE IN INCHES (MILLIMETERS).
4. LEAD SPACING TOLERANCE IS NON-CUMULATIVE.
5. PACKAGE WARP SHALL NOT EXCEED 0.05MM DATUM – C –
6. ALL GROUND LEADS AND GROUND PADDLE MUST BE SOLDERED TO
PCB RF GROUND.
Package Information
Part Number
Package Body Material
HMC963LC4
Alumina, White
[1] Max peak reflow temperature of 260 °C
[2] 4-Digit lot number XXXX
Lead Finish
Gold over Nickel
MSL Rating
MSL3 [1]
Package Marking [2]
H963
XXXX
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4