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INCHANGE Semiconductor
isc N-Channel MOSFET Transistor
isc Product Specification
2SK1378
DESCRIPTION
·Drain Current ID=10A@ TC=25
·Drain Source Voltage-
: VDSS=400V(Min)
·Fast Switching Speed
APPLICATIONS
·Designed for high voltage, high speed power switching
ABSOLUTE MAXIMUM RATINGS(Ta=25)
SYMBOL ARAMETER
VALUE
UNIT
VDSS
VGS
ID
Ptot
Tj
Tstg
Drain-Source Voltage (VGS=0)
Gate-Source Voltage
400
±30
Drain Current-continuous@ TC=25
10
Total Dissipation@TC=25
125
Max. Operating Junction Temperature
150
Storage Temperature Range
-55~150
V
V
A
W
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
MAX UNIT
Rth j-c
Rth j-a
Thermal Resistance,Junction to Case
2.77 /W
Thermal Resistance,Junction to Ambient 62.5 /W
isc websitewww.iscsemi.cn
1 isc & iscsemi is registered trademark
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INCHANGE Semiconductor
isc N-Channel Mosfet Transistor
isc Product Specification
2SK1378
·ELECTRICAL CHARACTERISTICS (TC=25)
SYMBOL
PARAMETER
CONDITIONS
V(BR)DSS Drain-Source Breakdown Voltage VGS=0; ID= 0.25mA
VGS(th) Gate Threshold Voltage
VDS=10 VGS; ID=0.25mA
RDS(on) Drain-Source On-stage Resistance VGS=10V; ID=5A
IGSS Gate Source Leakage Current
VGS= ±25V;VDS= 0
IDSS Zero Gate Voltage Drain Current VDS=400V; VGS= 0
tr Rise time
ton Turn-on time
tf Fall time
VGS=10V;ID=10A;RL=20Ω
toff Turn-off time
MIN TYP MAX UNIT
400 V
2.0 4.0 V
0.35 0.55
Ω
±100 nA
250 uA
16 ns
40 ns
14 ns
80 ns
isc websitewww.iscsemi.cn
2 isc & iscsemi is registered trademark
PDF pdfFactory Pro
www.fineprint.cn