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NOT RECOMMENDED FOR NEW DESIGN
USE MJD32CUQ
Description
This Bipolar Junction Transistor (BJT) is designed to meet the
stringent requirements of Automotive Applications.
Features
BVCEO > -100V
IC = -3A high Continuous Collector Current
ICM = -5A Peak Pulse Current
Ideal for Power Switching or Amplification Applications
Complementary NPN Type: MJD31CQ
Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)
Halogen and Antimony Free. “Green” Device (Note 3)
Qualified to AEC-Q101 Standards for High Reliability
PPAP Capable (Note 4)
MJD32CQ
100V PNP HIGH VOLTAGE TRANSISTOR IN TO252
Mechanical Data
Case: TO252 (DPAK)
Case Material: Molded Plastic, "Green" Molding Compound
UL Flammability Classification Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020
Terminals: Finish Matte Tin Plated Leads, Solderable per
MIL-STD-202, Method 208
Weight: 0.34 grams (Approximate)
TO252 (DPAK)
C
B
Top View
E
Device Schematic
Pin Out Configuration
Top View
Ordering Information (Notes 4 & 5)
Product
MJD32CQ-13
Compliance
Automotive
Marking
MJD32C
Reel size (inches)
13
Tape width (mm)
16
Quantity per reel
2,500
Notes:
1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant.
2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green"
and Lead-free.
3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds.
4. Automotive products are AEC-Q101 qualified and are PPAP capable. Refer to http://www.diodes.com/quality/product_compliance_definitions/.
5. For packaging details, go to our website at http://www.diodes.com/products/packages.html.
Marking Information
MJD32CQ
Document number: DS37050 Rev. 3 - 3
MJD32C = Product Type Marking Code
= Manufacturers’ code marking
YYWW = Date Code Marking
YY = Last Digit of Year (ex: 16 = 2016)
WW = Week Code (01 - 53)
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Absolute Maximum Ratings (@TA = +25°C, unless otherwise specified.)
Characteristic
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Continuous Collector Current
Peak Pulse Collector Current
Continuous Base Current
Power Dissipation
Symbol
VCBO
VCEO
VEBO
IC
ICM
IB
PD
Value
-100
-100
-6
-3
-5
-1
15
MJD32CQ
Unit
V
V
V
A
A
A
W
Thermal Characteristics (@TA = +25°C, unless otherwise specified.)
Power Dissipation
Characteristic
Thermal Resistance, Junction to Ambient Air
Thermal Resistance, Junction to Leads
Operating and Storage Temperature Range
(Note 6)
(Note 7)
(Note 8)
(Note 6)
(Note 7)
(Note 8)
(Note 9)
Symbol
PD
RθJA
RθJL
TJ, TSTG
Value
3.9
2.1
1.6
32
59
80
8.4
-55 to +150
Unit
W
°C/W
°C
ESD Ratings (Note 10)
Characteristic
Electrostatic Discharge - Human Body Model
Electrostatic Discharge - Machine Model
Symbol
ESD HBM
ESD MM
Value
4,000
400
Unit
V
V
JEDEC Class
3A
C
Notes:
6. For a device mounted with the exposed collector pad on 50mm x 50mm 2oz copper that is on a single-sided 1.6mm FR4 PCB; device is measured
under still air conditions whilst operating in a steady-state.
7. Same as note (6), except mounted on 25mm x 25mm 1oz copper.
8. Same as note (6), except mounted on minimum recommended pad (MRP) layout.
9. Thermal resistance from junction to solder-point (on the exposed collector pad).
10. Refer to JEDEC specification JESD22-A114 and JESD22-A115.
MJD32CQ
Document number: DS37050 Rev. 3 - 3
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Thermal Characteristics
MJD32CQ
10
V
CE(sat)
Limited
1 DC
1s
100ms
100m
10ms
1ms
Single Pulse
100µs
T =25°C
amb
10m
100m
1
10 100
-V Collector-Emitter Voltage (V)
CE
Safe Operating Area
80
T =25°C
AMB
Minimum Copper
60
D=0.5
40
D=0.2
20
0
100µ 1m
Single Pulse
D=0.05
D=0.1
10m 100m 1 10 100 1k
Pulse Width (s)
Transient Thermal Impedance
10
V
CE(sat)
Limited
1
0.1
DC
100ms
10ms
1ms
100s
Single Pulse
T =25°C
CASE
0.01
0.1 1
10 100
-V Collector-Emitter Voltage (V)
CE
Safe Operating Area
8
6
D=0.5
4 D=0.2
D=0.1
2 D=0.05
0
100µ 1m
Single Pulse
10m 100m
1
T =25°C
CASE
10 100 1k
Pulse Width (s)
Transient Thermal Impedance
MJD32CQ
Document number: DS37050 Rev. 3 - 3
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MJD32CQ
Electrical Characteristics (@TA = +25°C, unless otherwise specified.)
Characteristic
Collector-Emitter Breakdown Voltage (Note 11)
Collector Cut-off Current
Collector Cut-off Current
Emitter Cut-off Current
Collector-Emitter Saturation Voltage (Note 11)
Base-Emitter Turn-On Voltage (Note 11)
DC Current Gain (Note 11)
Current Signal Current Gain
Current Gain-Bandwidth Product
Symbol
BVCEO
ICEO
ICES
IEBO
VCE(sat)
VBE(on)
hFE
Hfe
fT
Min
-100
25
10
20
3.0
Note:
11. Measured under pulsed conditions. Pulse width 300μs. Duty cycle 2%.
Typ




Max
-1
-1
-1
-1.2
-1.8
50


Unit
V
μA
μA
μA
V
V

MHz
Test Condition
IC = -30mA, IB = 0
VCB = -60V, IB = 0
VCE = -100V, VEB = 0
VEB = -5V, IC = 0
IC = -3.0A, IB = -375mA
IC = -3A, VCE = -4V
VCE = -4V, IC = -1A
VCE = -4V, IC = -3A
VCE = -10V, IC = -0.5A, f = 1KHz
IC = -500mA, VCE = -10V, f = 1MHz
MJD32CQ
Document number: DS37050 Rev. 3 - 3
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Typical Electrical Characteristics (@TA = +25°C, unless otherwise specified.)
1,000
VCE = -4V
1
IC/IB = 8
MJD32CQ
TA = 150°C
TA = 85°C
TA = 25°C
100
TA = -55°C
0.1
0.01
TA = 150°C
TA = 85°C
TA = 25°C
TA = -55°C
10
1 10 100 1,000 10,000
-IC, COLLECTOR CURRENT (mA)
Figure 1 Typical DC Current Gain vs. Collector Current
1.4
1.2 VCE = -4V
1.0
0.8
TA = -55°C
0.6
TA = 25°C
0.4
TA = 150°C
0.2
TA = 85°C
0
1
10
100
1,000
10,000
-IC, COLLECTOR CURRENT (mA)
Figure 3 Typical Base-Emitter Turn-On Voltage
vs. Collector Current
1,000
f = 1MHz
0.001
1 10 100 1,000 10,000
-IC, COLLECTOR CURRENT (mA)
Figure 2 Typical Collector-Emitter Saturation Voltage
vs. Collector Current
1.2
IC/IB = 8
1.0
0.8
TA = -55°C
0.6
TA = 25°C
0.4 TA = 85°C
TA = 150°C
0.2
0
1
10
100
1,000
10,000
-IC, COLLECTOR CURRENT (mA)
Figure 4 Typical Base-Emitter Saturation Voltage
vs. Collector Current
100
Cibo
Cobo
10
0.1 1
10 100
VR, REVERSE VOLTAGE (V)
Figure 5 Typical Capacitance Characteristics
MJD32CQ
Document number: DS37050 Rev. 3 - 3
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