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MJD32CUQ
100V PNP HIGH VOLTAGE TRANSISTOR IN TO252 (DPAK)
Description
This Bipolar Junction Transistor (BJT) is designed to meet the
stringent requirements of Automotive Applications.
Features
BVCEO > -100V
IC = -3A High Continuous Collector Current
ICM = -5A Peak Pulse Current
Ideal for Power Switching or Amplification Applications
Complementary NPN Type: MJD31CUQ
Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)
Halogen and Antimony Free. “Green” Device (Note 3)
Qualified to AEC-Q101 Standards for High Reliability
PPAP Capable (Note 4)
Mechanical Data
Case: TO252 (DPAK)
Case Material: Molded Plastic, "Green" Molding Compound
UL Flammability Classification Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020
Terminals: Finish Matte Tin Plated Leads, Solderable per
MIL-STD-202, Method 208
Weight: 0.34 grams (Approximate)
TO252 (DPAK)
C
B
Top View
E
Device Schematic
Pin Out Configuration
Top View
Ordering Information (Notes 4 & 5)
Part number
Compliance
Marking
Reel size (inches)
Tape width (mm)
Quantity per reel
MJD32CUQ-13
Automotive
MJD32CU
13
16 2,500
Notes:
1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant.
2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and
Antimony-free, "Green" and Lead-free.
3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total
Br + Cl) and <1000ppm antimony compounds.
4. Automotive products are AEC-Q101 qualified and are PPAP capable. Refer to http://www.diodes.com/product_compliance_definitions.html.
5. For packaging details, go to our website at http://www.diodes.com/products/packages.html.
Marking Information
MJD32CU
MJD32CU = Product Type Marking Code
= Manufacturers’ Code Marking
YYWW = Date Code Marking
YY = Last Two Digits of Year (ex: 16 = 2016)
WW = Week Code (01 to 53)
MJD32CUQ
Document number: DS39134 Rev. 1 - 2
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August 2016
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Absolute Maximum Ratings (@TA = +25°C, unless otherwise specified.)
Characteristic
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Continuous Collector Current
Peak Pulse Collector Current
Continuous Base Current
Power Dissipation
Symbol
VCBO
VCEO
VEBO
IC
ICM
IB
PD
MJD32CUQ
Value
-120
-100
-7
-3
-5
-1
15
Unit
V
V
V
A
A
A
W
Thermal Characteristics (@TA = +25°C, unless otherwise specified.)
Power Dissipation
Characteristic
Thermal Resistance, Junction to Ambient Air
Thermal Resistance, Junction to Leads
Operating and Storage Temperature Range
(Note 6)
(Note 7)
(Note 8)
(Note 6)
(Note 7)
(Note 8)
(Note 9)
Symbol
PD
RθJA
RθJL
TJ, TSTG
Value
3.9
2.1
1.6
32
59
80
8.4
-55 to +150
Unit
W
°C/W
°C
ESD Ratings (Note 10)
Characteristic
Symbol
Value
Unit JEDEC Class
Electrostatic Discharge - Human Body Model
ESD HBM
4,000
V 3A
Electrostatic Discharge - Machine Model
ESD MM
400 V C
Notes:
6. For a device mounted with the exposed collector pad on 50mm x 50mm 2oz copper that is on a single-sided 1.6mm FR-4 PCB; device is measured
under still air conditions whilst operating in a steady-state.
7. Same as note (6), except mounted on 25mm x 25mm 1oz copper.
8. Same as note (6), except mounted on minimum recommended pad (MRP) layout.
9. Thermal resistance from junction to solder-point (on the exposed collector pad).
10. Refer to JEDEC specification JESD22-A114 and JESD22-A115.
MJD32CUQ
Document number: DS39134 Rev. 1 - 2
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Thermal Characteristics
MJD32CUQ
10
V
CE(sat)
Limited
1 DC
1s
100ms
100m
10ms
1ms
Single Pulse
T =25oC
amb
10m
100m
1
100s
10
100
-V Collector-Emitter Voltage (V)
CE
Safe Operating Area
80
T =25oC
AMB
Minimum Copper
60
D=0.5
40
D=0.2
20
Single Pulse
D=0.05
D=0.1
0
100μµ 1m 10m 100m 1 10 100 1k
Pulse Width (s)
Transient Thermal Impedance
10
V
CE(sat)
Limited
1
0.1
DC
100ms
10ms
1ms
100s
Single Pulse
0.01
T =25oC
CASE
0.1 1
10 100
-V Collector-Emitter Voltage (V)
CE
Safe Operating Area
8
6
D=0.5
4 D=0.2
D=0.1
2 D=0.05
Single Pulse
0
100µμ 1m 10m 100m
1
T =25oC
CASE
10 100 1k
Pulse Width (s)
Transient Thermal Impedance
MJD32CUQ
Document number: DS39134 Rev. 1 - 2
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MJD32CUQ
Electrical Characteristics (@TA = +25°C, unless otherwise specified.)
Characteristic
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage (Note 11)
Emitter-Base Breakdown Voltage
Collector-Base Cut-off Current
Collector Cut-off Current
Collector Cut-off Current
Emitter Cut-off Current
Collector-Emitter Saturation Voltage
(Note 11)
Base-Emitter Saturation Voltage (Note 11)
Base-Emitter Turn-On Voltage (Note 11)
Symbol
BVCBO
BVCEO
BVEBO
ICBO
ICEO
ICES
IEBO
VCE(sat)
VBE(sat)
VBE(on)
Min
-120
-100
-7







DC Current Gain (Note 11)
hFE
25
10
Current Signal Current Gain
Current Gain-Bandwidth Product
Hfe 20
fT 3.0
Note:
11. Measured under pulsed conditions. Pulse width 300μs. Duty cycle 2%.
Typ











Max


-1
-1
-1
-1
-300
-500
-700
-1.2
-950
-1.4
50


Unit
V
V
V
μA
μA
μA
μA
mV
mV
mV
V
mV
V

MHz
Test Condition
IC = -20μA
IC = -30mA
IE = -100μA
VCB = -100V
VCE = -60V
VCE = -100V
VEB = -5V
IC = -1A, IB = -100mA
IC = -2A, IB = -200mA
IC = -3A, IB = -375mA
IC = -2A, IB = -200mA
IC = -1A, VCE = -2V
IC = -3A, VCE = -4V
VCE = -4V, IC = -1A
VCE = -4V, IC = -3A
VCE = -10V, IC = -0.5A, f = 1kHz
IC = -0.5A, VCE = -10V, f = 1MHz
MJD32CUQ
Document number: DS39134 Rev. 1 - 2
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Typical Electrical Characteristics (@TA = +25°C, unless otherwise specified.)
1,000
N
AI
G
NT
RE
R
100
U
C
C
D
,E
hF
TA = 150°C
TA = 85°C
TA = 25°C
TA = -55°C
VCE = -4V
1
R
MITTE
R-E
O
CT
GE(V)
TOLA
V
0.1
E
OLL
C
, T)A
-V(CES
N
O
RTAI
U
TA
S
0.01
IC / I B = 8
MJD32CUQ
TA = 150°C
TA = 85°C
TA = 25°C
TA = -55°C
10
1 10 100 1,000 10,000
-IC, COLLECTOR CURRENT (mA)
Typical DC Current Gain vs. Collector Current
()GEV
TOLA
1.4
1.2
VCE = -4V
V
N
1.0
O
N-
R
U
0.8
T
R
TA = -55°C
MTTIE
0.6
TA = 25°C
E
-SE 0.4
TA = 85°C
A
B
TA = 150°C
, )N 0.2
O
(E
-VB
0
1
10
100
1,000 10,000
-IC, COLLECTOR CURRENT (mA)
Typical Base-Emitter Turn-On Voltage
vs. Collector Current
1,000
f = 1MHz
0.001
1
10 100 1,000 10,000
-IC, COLLECTOR CURRENT (mA)
Typical Collector-Emitter Saturation Voltage
vs. Collector Current
V) 1.2
E( IC/ IB = 8
G
OLTA 1.0
V
N
O
RATI
0.8
TA = -55°C
U
SAT
0.6
TA = 25°C
R
TTE 0.4
TA = 85°C
MI
E
TA = 150°C
SE-
BA
0.2
, SAT) 0
VBE( 1
-
10 100 1,000
-IC, COLLECTOR CURRENT (mA)
Typical Base-Emitter Saturation Voltage
vs. Collector Current
10,000
100
Cibo
Cobo
10
0.1 1
10 100
VR, REVERSE VOLTAGE (V)
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MJD32CUQ
Document number: DS39134 Rev. 1 - 2
5 of 7
www.diodes.com
August 2016
© Diodes Incorporated