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Sa mHop Microelectronics C orp.
N-Channel Enhancement Mode Field Effect Transistor
SDP08N60
SDF08N60
Ver 2.1
PRODUCT SUMMARY
VDSS ID RDS(ON) (Ω) Typ
600V 8A 0.89 @ VGS=10V
FEATURES
Super high dense cell design for low RDS(ON).
Rugged and reliable.
TO-220 and TO-220F Package.
D
GDS
SDP SERIES
TO-220
GDS
SDF SERIES
TO-220F
G
S
ORDERING INFORMATION
Ordering Code
Package
SDP08N60HZ
TO-220
SDP08N60PZ
TO-220
SDF08N60HZ
TO-220F
SDF08N60PZ
TO-220F
Marking Code
SDP08N60
08N60
SDF08N60
08N60
Delivery Mode
Tube
Tube
Tube
Tube
RoHS Status
Halogen Free
Pb Free
Halogen Free
Pb Free
ABSOLUTE MAXIMUM RATINGS (TC=25°C unless otherwise noted)
Symbol Parameter
SDP08N60 SDF08N60
VDS Drain-Source Voltage
600
VGS Gate-Source Voltage
±30 ±30
ID
Drain Current-Continuous a
TC=25°C
TC=100°C
88
5.7 5.7
IDM -Pulsed a
23 23
EAS Single Pulse Avalanche Energy c
400
PD
Maximum Power Dissipation
TC=25°C
TC=100°C
150 50
75 25
TJ, TSTG
Operating Junction and Storage
Temperature Range
-55 to 175
Units
V
V
A
A
A
mJ
W
W
°C
THERMAL CHARACTERISTICS
R JC
R JA
Thermal Resistance, Junction-to-Case
Thermal Resistance, Junction-to-Ambient
1 3 °C/W
62.5 62.5 °C/W
Details are subject to change without notice.
1
Dec,24,2013
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SDP08N60
SDF08N60
Ver 2.1
ELECTRICAL CHARACTERISTICS (TC=25°C unless otherwise noted)
4 Symbol Parameter
Conditions
Min
OFF CHARACTERISTICS
BVDSS Drain-Source Breakdown Voltage
IDSS Zero Gate Voltage Drain Current
IGSS Gate-Body Leakage Current
VGS=0V , ID=250uA
VDS=480V , VGS=0V
VGS= ±30V , VDS=0V
600
ON CHARACTERISTICS
VGS(th)
Gate Threshold Voltage
RDS(ON)
gFS
Drain-Source On-State Resistance
Forward Transconductance
DYNAMIC CHARACTERISTICS b
CISS Input Capacitance
COSS
Output Capacitance
CRSS
Reverse Transfer Capacitance
SWITCHING CHARACTERISTICS b
tD(ON)
Turn-On Delay Time
tr Rise Time
tD(OFF)
tf
Qg
Qgs
Qgd
Turn-Off Delay Time
Fall Time
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
VDS=VGS , ID=250uA
VGS=10V , ID=4A
VDS=20V , ID=4A
VDS=25V,VGS=0V
f=1.0MHz
VDD=300V
ID=1A
VGS=10V
RGEN= 6 ohm
VDS=300V,ID=1A,VGS=10V
VDS=300V,ID=1A,
VGS=10V
2
DRAIN-SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS
VSD Diode Forward Voltage
VGS=0V,IS=3A
Notes
a.Drain current limited by maximum junction temperatrue.
b.Guaranteed by design, not subject to production testing.
c.Starting TJ=25°C,L=50mH,VDD = 50V.(See Figure12)
Typ Max Units
1
±100
V
uA
nA
3 4V
0.89 1.11 ohm
5.3 S
1080
106
10
pF
pF
pF
39 ns
18.4 ns
40 ns
15 ns
13.4 nC
2.9 nC
5.5 nC
0.79 1.4
V
Dec,24,2013
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SDP08N60
SDF08N60
15
VGS =10V
12
VGS =7V
9
6
VGS =6V
3
VGS =5V
0
0 5 10 15 20 25 30
VDS, Drain-to-Source Voltage(V)
Figure 1. Output Characteristics
Ver 2.1
6.0
4.8
3.6
2.4
T j=125 C
1.2 -55 C
25 C
0
0 1.4 2.8 4.2 5.6 7.0 8.4
VGS, Gate-to-Source Voltage(V)
Figure 2. Transfer Characteristics
3.0
2.5
2.0
1.5
V GS =10V
1.0
0.5
0
0.1 3 6 9 12 15
ID, Drain Current(A)
Figure 3. On-Resistance vs. Drain Current
and Gate Voltage
3.0
2.6
2.2 V G S =10V
ID=4A
1.8
1.4
1.0
0
0 25 50 75 100 125 150
Tj, Junction Temperature(° C ) T j( C )
Figure 4. On-Resistance Variation with Drain
Current and Temperature
1.6
1.4
V DS =V G S
ID=250uA
1.2
1.0
0.8
0.6
0.4
0.2
-50 -25 0 25 50 75 100 125 150
Tj, Junction Temperature(°C )
Figure 5. Gate Threshold Variation
with Temperature
3
1.15
ID=250uA
1.10
1.05
1.00
0.95
0.90
0.85
-50 -25 0 25 50 75 100 125 150
Tj, Junction Temperature(°C )
Figure 6. Breakdown Voltage Variation
with Temperature
Dec,24,2013
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SDP08N60
SDF08N60
3.0
ID= 4A
2.5
2.0
125 C
1.5
75 C
1.0
25 C
0.5
0
0 2 4 6 8 10
VGS, Gate-to-Source Voltage(V)
Figure 7. On-Resistance vs.
Gate-Source Voltage
2400
2000
1600
1200
C is s
800
C oss
400
C rss
0
0 10 20 30 40 50
VDS, Drain-to-Source Voltage(V)
Figure 9. Capacitance
Ver 2.1
20.0
10.0
5.0 125 C
75 C
25 C
1.0
0
0.25 0.50 0.75 1.00 1.25
VSD, Body Diode Forward Voltage(V)
Figure 8. Body Diode Forward Voltage
Variation with Source Current
10
8 VDS =300V
ID= 1A
6
4
2
0
0 2 4 6 8 10 12 14 16
Qg, Total Gate Charge(nC)
Figure 10. Gate Charge
100
10
R DS(ON) Limit
DC10ms1ms100us
1
100
10
1
R DS(ON) Limit DC10ms1ms100u1s0us
0.1
0.01
0.1
VGS=10V
Single Pulse
TC=25 C
1 10
100 1000
V DS , Drain-S ource V oltage (V )
Figure 11a. Maximum Safe Operating
Area for SDP08N60
4
0.1
0.01
0.1
VGS=10V
Single Pulse
TC=25 C
1 10
100 1000
V DS , Drain-S ource V oltage (V )
Figure 11b. Maximum Safe Operating
Area for SDF08N60
Dec,24,2013
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SDP08N60
SDF08N60
Ver 2.1
V( BR )D S S
tp
V DS
L
RG
20V
tp
D .U .T
IA S
0 .0 1
+
- VDD
Unclamped Inductive Test Circuit
F igure 12a.
2
1
D=0.5
IAS
Unclamped Inductive Waveforms
F igure 12b.
0.2
0.1
0.1 0.05
0.02
0.01
S ingle P uls e
0.01
0.00001
0.0001
0.001
0.01
P DM
t1
t2
1. R JC (t)=r (t) * R JC
2. R JC=S ee Datas heet
3. T JM-T C = P * R JC (t )
4. Duty C ycle, D=t1/t2
0.1 1
Square Wave Pulse Duration (msec)
Figure 13a. Normalized Thermal Transient Impedance Curve for SDP08N60
10
2
1
D=0.5
0.1
0.01
0.00001
0.2
0.1
0.05
0.02
0.01
S ingle P uls e
P DM
t1
t2
1. R JC (t)=r (t) * R JC
2. R JC=S ee Datas heet
3. T JM-T C = P * R JC (t )
4. Duty C ycle, D=t1/t2
0.0001
0.001
0.01
0.1
1
S quare Wave P uls e Duration (ms ec)
Figure 13b. Normalized Thermal Transient Impedance Curve for SDF08N60
10
Dec,24,2013
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