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SCT2450KE
N-channel SiC power MOSFET
Datasheet
VDSS
RDS(on) (Typ.)
ID
PD
1200V
450m
10A
85W
Features
1) Low on-resistance
2) Fast switching speed
3) Fast reverse recovery
4) Easy to parallel
5) Simple to drive
6) Pb-free lead plating ; RoHS compliant
Application
• Solar inverters
• DC/DC converters
• Switch mode power supplies
• Induction heating
• Motor drives
Outline
TO-247
Inner circuit
(1) (2) (3)
(2)
(1) Gate
(2) Drain
*1 (3) Source
(1)
*1 Body Diode
(3)
Packaging specifications
Packaging
Tube
Reel size (mm)
-
Tape width (mm)
Type
Basic ordering unit (pcs)
-
30
Packing code
C
Marking
SCT2450KE
Absolute maximum ratings (Ta = 25°C)
Parameter
Drain - Source voltage
Continuous drain current
Tc = 25°C
Tc = 100°C
Pulsed drain current
Gate - Source voltage (DC)
Gate - Source surge voltage (Tsurge ˂ 300nsec)
Power dissipation (Tc = 25°C)
Junction temperature
Range of storage temperature
Symbol
VDSS
ID *1
ID *1
ID,pulse *2
VGSS
VGSS-surge*3
PD
Tj
Tstg
Value
1200
10
7
25
6 to 22
10 to 26
85
175
55 to 175
Unit
V
A
A
A
V
V
W
°C
°C
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© 2013 ROHM Co., Ltd. All rights reserved.
1/12
2017.07 - Rev.D

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SCT2450KE
Thermal resistance
Parameter
Thermal resistance, junction - case
Thermal resistance, junction - ambient
Soldering temperature, wavesoldering for 10s
Datasheet
Symbol
RthJC
RthJA
Tsold
Values
Min. Typ. Max.
Unit
- 1.36 1.77 °C/W
- - 50 °C/W
- - 265 °C
Electrical characteristics (Ta = 25°C)
Parameter
Symbol
Conditions
Values
Min. Typ. Max.
Drain - Source breakdown
voltage
V(BR)DSS VGS = 0V, ID = 1mA
1200
-
-
Zero gate voltage
drain current
Gate - Source leakage current
Gate - Source leakage current
Gate threshold voltage
IDSS
IGSS
IGSS
VGS (th)
VDS = 1200V, VGS = 0V
Tj = 25°C
Tj = 150°C
VGS = 22V, VDS = 0V
VGS = 6V, VDS = 0V
VDS = VGS, ID = 0.9mA
-
-
-
-
1.6
1 10
2-
- 100
- 100
2.8 4.0
Unit
V
A
nA
nA
V
*1 Limited only by maximum temperature allowed.
*2 PW 10s, Duty cycle 1%
*3 Example of acceptable Vgs waveform
*4 Pulsed
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© 2013 ROHM Co., Ltd. All rights reserved.
2/12
2017.07 - Rev.D

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SCT2450KE
Datasheet
Electrical characteristics (Ta = 25°C)
Parameter
Symbol
Conditions
Static drain - source
on - state resistance
Gate input resistance
Transconductance
Input capacitance
Output capacitance
Reverse transfer capacitance
VGS = 18V, ID = 3A
RDS(on) *4 Tj = 25°C
Tj = 125°C
RG f = 1MHz, open drain
gfs *4 VDS = 10V, ID = 3A
Ciss VGS = 0V
Coss VDS = 800V
Crss f = 1MHz
Values
Min. Typ. Max.
- 450 585
- 610 -
- 25 -
- 1.0
-
- 463 -
- 21 -
-4-
Effective output capacitance,
energy related
Co(er)
VGS = 0V
VDS = 0V to 500V
- 31 -
Turn - on delay time
Rise time
Turn - off delay time
Fall time
td(on) *4 VDD = 400V, VGS = 18V
-
19
-
tr *4 ID = 3A
- 17 -
td(off) *4 RL = 133
- 38 -
tf *4 RG = 0
- 34 -
Turn - on switching loss
Turn - off switching loss
Eon *4
Eoff *4
VDD = 600V, ID=3A
VGS = 18V/0V
RG = 0, L=500H
*Eon includes diode
reverse recovery
- 47 -
- 17 -
Unit
m
S
pF
pF
ns
J
Gate Charge characteristics (Ta = 25°C)
Parameter
Symbol
Conditions
Total gate charge
Gate - Source charge
Gate - Drain charge
Gate plateau voltage
Qg *4 VDD = 400V
Qgs *4
Qgd *4
ID = 3A
VGS = 18V
V(plateau) VDD = 400V, ID = 3A
Values
Min. Typ. Max.
- 27 -
-7-
-9-
- 10.5 -
Unit
nC
V
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© 2013 ROHM Co., Ltd. All rights reserved.
3/12
2017.07 - Rev.D

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SCT2450KE
Datasheet
Body diode electrical characteristics (Source-Drain) (Ta = 25°C)
Parameter
Symbol
Conditions
Min.
Values
Typ.
Max.
Unit
Inverse diode continuous,
forward current
Inverse diode direct current,
pulsed
Forward voltage
Reverse recovery time
Reverse recovery charge
Peak reverse recovery current
IS *1
ISM *2
Tc = 25°C
VSD *4
trr *4
Qrr *4
Irrm *4
VGS = 0V, IS = 3A
IF = 3A, VR = 400V
di/dt = 110A/s
- - 10 A
- - 25 A
- 4.3 -
V
- 19 - ns
- 13 - nC
- 1.4 -
A
Typical Transient Thermal Characteristics
Symbol
Value
Unit
Rth1 230m
Rth2
687m
K/W
Rth3 441m
Symbol
Cth1
Cth2
Cth3
Value
219
1.29m
13.1m
Unit
Ws/K
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© 2013 ROHM Co., Ltd. All rights reserved.
4/12
2017.07 - Rev.D

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SCT2450KE
Electrical characteristic curves
Datasheet
Fig.1 Power Dissipation Derating Curve
90
80
70
60
50
40
30
20
10
0
0
50 100 150 200
Junction Temperature : Tj [°C]
Fig.2 Maximum Safe Operating Area
100
PW = 100s
PW = 1ms
10
PW = 10ms
PW = 100ms
1
Operation in this area
is limited by RDS(on)
0.1
Ta=25ºC
Single Pulse
0.01
0.1 1 10
100
1000 10000
Drain - Source Voltage : VDS [V]
Fig.3 Typical Transient Thermal
Resistance vs. Pulse Width
10
Ta=25ºC
Single Pulse
1
0.1
0.01
0.0001 0.001 0.01
0.1
1
Pulse Width : PW [s]
10
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© 2013 ROHM Co., Ltd. All rights reserved.
5/12
2017.07 - Rev.D