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SCT2450KE
N-channel SiC power MOSFET
Data Sheet
VDSS
RDS(on) (Typ.)
ID
PD
1200V
450mW
10A
85W
lFeatures
1) Low on-resistance
2) Fast switching speed
3) Fast reverse recovery
4) Easy to parallel
5) Simple to drive
6) Pb-free lead plating ; RoHS compliant
lApplication
Solar inverters
DC/DC converters
Switch mode power supplies
Induction heating
Motor drives
lOutline
TO-247
lInner circuit
(1) (2) (3)
(1) Gate
(2) Drain
(3) Source
*1 Body Diode
lPackaging specifications
Packaging
Reel size (mm)
Tape width (mm)
Type
Basic ordering unit (pcs)
Packing code
Marking
Tube
-
-
30
C
SCT2450KE
lAbsolute maximum ratings (Ta = 25°C)
Parameter
Drain - Source voltage
Continuous drain current
Tc = 25°C
Tc = 100°C
Pulsed drain current
Gate - Source voltage (DC)
Gate - Source surge voltage (Tsurge ˂ 300nsec)
Power dissipation (Tc = 25°C)
Junction temperature
Range of storage temperature
Symbol
VDSS
ID *1
ID *1
ID,pulse *2
VGSS
VGSS-surge*3
PD
Tj
Tstg
Value
1200
10
7
25
-6 to 22
-10 to 26
85
175
-55 to +175
Unit
V
A
A
A
V
V
W
°C
°C
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© 2015 ROHM Co., Ltd. All rights reserved.
1/13
2015.11 - Rev.C

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SCT2450KE
lThermal resistance
Parameter
Thermal resistance, junction - case
Thermal resistance, junction - ambient
Soldering temperature, wavesoldering for 10s
Data Sheet
Symbol
RthJC
RthJA
Tsold
Values
Min. Typ. Max.
Unit
- 1.36 1.77 °C/W
- - 50 °C/W
- - 265 °C
lElectrical characteristics (Ta = 25°C)
Parameter
Symbol
Conditions
Values
Min. Typ. Max.
Drain - Source breakdown
voltage
V(BR)DSS VGS = 0V, ID = 1mA
1200
-
-
Zero gate voltage
drain current
Gate - Source leakage current
Gate - Source leakage current
Gate threshold voltage
IDSS
IGSS+
IGSS-
VGS (th)
VDS = 1200V, VGS = 0V
Tj = 25°C
Tj = 150°C
VGS = +22V, VDS = 0V
VGS = -6V, VDS = 0V
VDS = VGS, ID = 0.9mA
-
-
-
-
1.6
1 10
2-
- 100
- -100
2.8 4.0
Unit
V
A
nA
nA
V
*1 Limited only by maximum temperature allowed.
*2 PW 10s, Duty cycle 1%
*3 Example of acceptable Vgs waveform
*4 Pulsed
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© 2015 ROHM Co., Ltd. All rights reserved.
2/13
2015.11 - Rev.C

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SCT2450KE
Data Sheet
lElectrical characteristics (Ta = 25°C)
Parameter
Symbol
Conditions
Static drain - source
on - state resistance
Gate input resistance
Transconductance
Input capacitance
Output capacitance
Reverse transfer capacitance
VGS = 18V, ID = 3A
RDS(on) *4 Tj = 25°C
Tj = 125°C
RG f = 1MHz, open drain
gfs *4 VDS = 10V, ID = 3A
Ciss VGS = 0V
Coss VDS = 800V
Crss f = 1MHz
Values
Min. Typ. Max.
- 450 585
- 610 -
- 25 -
- 1.0
-
- 463 -
- 21 -
-4-
Effective output capacitance,
energy related
Co(er)
VGS = 0V
VDS = 0V to 500V
- 31 -
Turn - on delay time
Rise time
Turn - off delay time
Fall time
td(on) *4 VDD = 400V, VGS = 18V
-
19
-
tr *4 ID = 3A
- 17 -
td(off) *4 RL = 133W
- 38 -
tf *4 RG = 0W
- 34 -
Turn - on switching loss
Turn - off switching loss
Eon *4
Eoff *4
VDD = 600V, ID=3A
VGS = 18V/0V
RG = 0W, L=500H
*Eon includes diode
reverse recovery
- 47 -
- 17 -
Unit
mW
W
S
pF
pF
ns
J
lGate Charge characteristics (Ta = 25°C)
Parameter
Symbol
Conditions
Total gate charge
Gate - Source charge
Gate - Drain charge
Gate plateau voltage
Qg *4
Qgs *4
Qgd *4
V(plateau)
VDD = 400V
ID = 3A
VGS = 18V
VDD = 400V, ID = 3A
Values
Min. Typ. Max.
- 27 -
-7-
-9-
- 10.5 -
Unit
nC
V
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© 2015 ROHM Co., Ltd. All rights reserved.
3/13
2015.11 - Rev.C

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SCT2450KE
Data Sheet
lBody diode electrical characteristics (Source-Drain) (Ta = 25°C)
Parameter
Symbol
Conditions
Min.
Values
Typ.
Max.
Unit
Inverse diode continuous,
forward current
Inverse diode direct current,
pulsed
Forward voltage
Reverse recovery time
Reverse recovery charge
Peak reverse recovery current
IS *1
ISM *2
Tc = 25°C
VSD *4
trr *4
Qrr *4
Irrm *4
VGS = 0V, IS = 3A
IF = 3A, VR = 400V
di/dt = 110A/s
- - 10 A
- - 25 A
- 4.3 -
V
- 19 - ns
- 13 - nC
- 1.4 -
A
lTypical Transient Thermal Characteristics
Symbol
Value
Unit
Rth1 230m
Rth2
687m
K/W
Rth3 441m
Symbol
Cth1
Cth2
Cth3
Value
219
1.29m
13.1m
Unit
Ws/K
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© 2015 ROHM Co., Ltd. All rights reserved.
4/13
2015.11 - Rev.C

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SCT2450KE
lElectrical characteristic curves
Data Sheet
Fig.1 Power Dissipation Derating Curve
90
80
70
60
50
40
30
20
10
0
0
50 100 150 200
Junction Temperature : Tj [°C]
Fig.2 Maximum Safe Operating Area
100
PW = 100s
PW = 1ms
10
PW = 10ms
PW = 100ms
1
Operation in this area
is limited by RDS(on)
0.1
Ta=25ºC
Single Pulse
0.01
0.1 1 10
100
1000 10000
Drain - Source Voltage : VDS [V]
Fig.3 Typical Transient Thermal
Resistance vs. Pulse Width
10
Ta=25ºC
Single Pulse
1
0.1
0.01
0.0001 0.001 0.01
0.1
1
Pulse Width : PW [s]
10
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© 2015 ROHM Co., Ltd. All rights reserved.
5/13
2015.11 - Rev.C