RB218NS150.pdf 데이터시트 (총 9 페이지) - 파일 다운로드 RB218NS150 데이타시트 다운로드

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Schottky Barrier Diode
RB218NS150
Data Sheet
lApplications
Switching power supply
lFeatures
1) Cathode common dual type
2) High reliability
3) Super low IR
lDimensions (Unit : mm)
(2)
RB218
NS150
1
(1) (3)
lLand size figure (Unit : mm)
11
9.9
2.5
2.54
TO-263S
2.54
lStructure
(2) Cathode
lConstruction
Silicon epitaxial planar type
ROHM : TO-263S JEITA : SC-83
1 : Manufacture date
lTaping specifications (Unit : mm)
(1) Anode (3) Anode
lAbsolute Maximum Ratings (Tc= 25°C)
Parameter
Symbol
Conditions
Limits Unit
Repetitive peak reverse voltage
VRM
Duty0.5
150 V
Reverse voltage
Average forward rectified current
Non-repetitive forward current surge peak
Operating junction temperature
VR
Io
IFSM
Tj
Direct reverse voltage
60Hz half sin wave, resistive load,
IO/2 per diode, Tc=115ºC Max.
60Hz half sin wave, Non-repetitive at
Ta=25ºC , 1cycle, per diode
-
150 V
20 A
100 A
150 °C
Storage temperature
Tstg
- -55 to +150 °C
lElectrical and Thermal Characteristics (Tj = 25°C)
Parameter
Symbol
Conditions
Min. Typ. Max. Unit
Forward voltage
VF IF=10A - - 0.88 V
Reverse current
IR
VR=150V
- - 20 mA
Thermal resistance
Rth(j-c)
Junction to case
- - 2 °C/W
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© 2016 ROHM Co., Ltd. All rights reserved.
1/5
2016.01 - Rev.A

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RB218NS150
lElectrical Characteristic Curves
Data Sheet
100
Tj = 150°C
10 Tj = 125°C
1
0.1
0.01
Tj = 75°C
Tj = 25°C
Tj = -25°C
0.001
0 200 400 600 800 1000 1200 1400
FORWARD VOLTAGE : VF(mV)
VF-IF CHARACTERISTICS
10000
1000
Tj = 150°C
Tj = 125°C
100 Tj = 75°C
10
1 Tj = 25°C
0.1
0.01
Tj = -25°C
0.001
0.0001
0
50 100
REVERSE VOLTAGE : VR(V)
VR-IR CHARACTERISTICS
150
1000
Tj = 25°C
f = 1MHz
850
830
Tj=25°C
IF=10A
n=30pcs
810
100 Ave. : 785mV
790
770
10
0
750
10 20 30
REVERSE VOLTAGE : VR(V)
VR-Ct CHARACTERISTICS
VF DISPERSION MAP
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© 2016 ROHM Co., Ltd. All rights reserved.
2/5
2016.01 - Rev.A

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RB218NS150
lElectrical Characteristic Curves
Data Sheet
2500
2000
1500
1000
500
0
Tj=25°C
VR=150V
n=30pcs
Ave. : 507nA
IR DISPERSION MAP
1100
1050
1000
950
900
850
800
750
700
650
600
Tj=25°C
f=1MHz
VR=0V
n=10pcs
Ave. : 756pF
Ct DISPERSION MAP
500
450
400
IFSM 1cyc
350
8.3ms
Ta=25°C
300
Ave. : 220A
250
200
150
100
50
0
IFSM DISPERSION MAP
50
45 Tj=25°C
IF=0.5A
40 IR=1.0A
35 Irr / IR=0.25
n=10pcs
30
25
20 Ave. : 14.8ns
15
10
5
0
trr DISPERSION MAP
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© 2016 ROHM Co., Ltd. All rights reserved.
3/5
2016.01 - Rev.A

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RB218NS150
lElectrical Characteristic Curves
1000
IFSM
8.3 8.3
ms ms
1cyc
Ta=25°C
1000
Data Sheet
IFSM
time
1cyc
Ta=25°C
100
1
10 100
NUMBER OF CYCLES
IFSM-CYCLE CHARACTERISTICS
100
1
10
TIME : t (ms)
IFSM-t CHARACTERISTICS
100
25
Tj = 150°C
20
D = 1/2
15 Sin(θ=180)
10 DC
5
0
0 5 10 15 20 25 30 35
AVERAGE RECTIFIED
FORWARD CURRENT : Io (A)
Io-PF CHARACTERISTICS
600
Tj = 150°C
500
400
300 Sin(θ=180)
200 D = 1/2
DC
100
0
0 50 100 150
REVERSE VOLTAGE : VR (V)
VR-PR CHARACTERISTICS
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© 2016 ROHM Co., Ltd. All rights reserved.
4/5
2016.01 - Rev.A

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RB218NS150
lElectrical Characteristic Curves
Data Sheet
10
Rth(j-a)
1 Rth(j-c)
IM=100mA
IF=25A
time
1ms300ms
0.1
0.001 0.01 0.1 1 10 100 1000
TIME : t (s)
Rth-t CHARACTERISTICS
60
50
40
DC
30
IO
0A
0V
VR t
T
D = 1/2
D=t/T
VR=VRM/2
Tj=150°C
20
Sin(θ=180)
10
0
0 25 50 75 100 125 150
AMBIENT TEMPERATURE : Ta (°C)
DERATING CURVE (Io-Ta)
60
50
40 DC
30
D = 1/2
20
10 Sin(θ=180)
IO
0A
0V
VR t
T
D=t/T
VR=VRM/2
Tj=150°C
0
0 25 50 75 100 125 150
CASE TEMPERATURE : Tc (°C)
DERATING CURVE (Io-Tc)
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© 2016 ROHM Co., Ltd. All rights reserved.
5/5
2016.01 - Rev.A