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DATASHEET
ISL70444SEH
19MHz Radiation Hardened 40V Quad Rail-to-Rail Input - Output,
Low-Power Operational Amplifiers
FN8411
Rev.5.00
Jan 19, 2018
The ISL70444SEH features four low-power amplifiers
optimized to provide maximum dynamic range. These op
amps feature a unique combination of rail-to-rail operation on
the input and output as well as a slew enhanced front-end that
provides ultra fast slew rates positively proportional to a given
step size, thereby increasing accuracy under transient
conditions, whether it’s periodic or momentary. It also offers
low power, low offset voltage, and low temperature drift,
making it ideal for applications requiring both high DC
accuracy and AC performance. With <5µs recovery for Single
Event Transients (SET) (LETTH = 86.4MeV•cm2/mg), the
number of filtering components needed is drastically reduced.
The ISL70444SEH is also immune to single event latch-up
because it is fabricated using the Renesas proprietary PR40
Silicon On Insulator (SOI) process.
The amplifiers are designed to operate over a single supply
range of 2.7V to 40V or a split supply voltage range of ±1.35V to
±20V. Applications for these amplifiers include precision
instrumentation, data acquisition, precision power supply
controls, and process controls.
The ISL70444SEH is available in a 14 Ld hermetic ceramic
flatpack and die forms that operate across the temperature
range of -55°C to +125°C.
Related Literature
• For a full list of related documents, visit our website
- ISL70444SEH product page
Features
• Electrically screened to DLA SMD# 5962-13214
• Acceptance tested to 50krad(Si) (LDR) wafer-by-wafer
• <5µs recovery from SEE (LETTH = 86.4MeV•cm2/mg)
• Unity gain stable
• Rail-to-rail input and output
• Wide gain·bandwidth product . . . . . . . . . . . . . . . . . . . . 19MHz
• Wide single and dual supply range. . . . . . . . 2.7V to 40V max
• Low input offset voltage . . . . . . . . . . . . . . . . . . . . . . . . . 400µV
• Low current consumption (per amplifier) . . . . . . . 1.1mA, typ
• No phase reversal with input overdrive
• Slew rate
- Large signal . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 60V/µs
• Operating temperature range. . . . . . . . . . . .-55°C to +125°C
• Radiation tolerance
- High dose rate (50-300rad(Si)/s). . . . . . . . . . . 300krad(Si)
- Low dose rate (0.01rad(Si)/s) . . . . . . . . . . . . 100krad(Si)*
- SEB LETTH (VS = ±21V). . . . . . . . . . . . . . 86.4MeV•cm2/mg
- SEL immune (SOI Process)
* Product capability established by initial characterization.
Applications
• Precision instruments
• Active filter blocks
• Data acquisition
• Power supply control
• Process control
RF
+
RSENSE
RIN-
10kΩ
RIN+
10kΩ
LOAD
100kΩ
-IN -
+2.7V
to 40V
V+ VOUT
ISL70444
+IN +
V-
VOUT = 10
RREF+
(ILOAD * RSENSE)
100kΩ
VREF
FIGURE 1. TYPICAL APPLICATION: SINGLE-SUPPLY, HIGH-SIDE
CURRENT SENSE AMPLIFIER
30
VS ±18V
20
10
0 GROUNDED
-10
BIASED
-20
-30 0
50 100 150 200 250
krad (Si)
300
FIGURE 2. VOS SHIFT vs HIGH DOSE RATE RADIATION
FN8411 Rev.5.00
Jan 19, 2018
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ISL70444SEH
Table of Contents
Pin Configuration. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
Pin Descriptions. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
Ordering Information . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
Absolute Maximum Ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5
Thermal Information . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5
Recommended Operating Conditions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5
Electrical Specifications VS = ±18V . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5
Electrical Specifications VS = ±2.5V . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6
Electrical Specifications VS = ±1.5V . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7
Electrical Specifications VS = ±18V - Post Radiation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8
Electrical Specifications VS = ±2.5V - Post Radiation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9
Electrical Specifications VS = ±1.5V - Post Radiation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9
Typical Performance Curves . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10
Post High Dose Rate Radiation Characteristics. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 18
Post Low Dose Rate Radiation Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 19
Applications Information . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20
Functional Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20
Operating Voltage Range . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20
Input Performance. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20
Input ESD Diode Protection . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20
Output Short-Circuit Current Limiting . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20
Output Phase Reversal . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20
Power Dissipation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20
Slew Rate Enhancement . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20
Unused Channel Configuration . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 21
Die Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 22
Die Dimensions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 22
Interface Materials . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 22
Assembly Related Information . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 22
Additional Information . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 22
Weight of Packaged Device . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 22
Lid Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 22
Metallization Mask Layout . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 22
Revision History. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 24
Package Outline Drawing . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 25
FN8411 Rev.5.00
Jan 19, 2018
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ISL70444SEH
Pin Configuration
OUTA
-INA
+INA
V+
+INB
-INB
OUTB
ISL70444SEH
(14 LD FLATPACK)
TOP VIEW
1 14
2A
D 13
-+ +-
3 12
4 11
5 10
-+ +-
6B
C9
78
OUTD
-IND
+IND
V-
+INC
-INC
OUTC
Pin Descriptions
PIN NUMBER
1
2
3
4
5
6
7
8
9
10
11
12
13
14
-
PIN NAME
OUTA
-INA
+INA
V+
+INB
-INB
OUTB
OUTC
-INC
+INC
V-
+IND
-IND
OUTD
E-Pad
V+
600Ω
IN-
600Ω
IN+
CIRCUIT 1
V-
EQUIVALENT ESD CIRCUIT
DESCRIPTION
Circuit 2
Amplifier A output
Circuit 1
Amplifier A inverting input
Circuit 1
Amplifier A non-inverting input
Circuit 3
Positive power supply
Circuit 1
Amplifier B non-inverting input
Circuit 1
Amplifier B inverting input
Circuit 2
Amplifier B output
Circuit 2
Amplifier C output
Circuit 1
Amplifier C inverting input
Circuit 1
Amplifier C non-inverting input
Circuit 3
Negative power supply
Circuit 1
Amplifier D non-inverting input
Circuit 1
Amplifier D inverting input
Circuit 2
Amplifier D output
None
E-Pad under package (Unbiased, tied to package lid)
V+
OUT
V-
CIRCUIT 2
V+
CAPACITIVELY
TRIGGERED ESD
CLAMP
V-
CIRCUIT 3
FN8411 Rev.5.00
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ISL70444SEH
Ordering Information
ORDERING/SMD NUMBER
(Note 2)
PART NUMBER
(Note 1)
TEMP RANGE
(°C)
PACKAGE
(RoHS Compliant)
PKG.
DWG. #
5962F1321401VXC
ISL70444SEHVF
-55 to +125
14 Ld Flatpack
K14.C
N/A
ISL70444SEHF/PROTO (Note 3)
-55 to +125
14 Ld Flatpack
K14.C
5962F1321401V9A
ISL70444SEHVX
-55 to +125
DIE
N/A
ISL70444SEHX/SAMPLE (Note 3)
-55 to +125
DIE
N/A
ISL70444SEHEVAL1Z (Note 4)
Evaluation Board
NOTES:
1. These Pb-free Hermetic packaged products employ 100% Au plate - e4 termination finish, which is RoHS compliant and compatible with both SnPb
and Pb-free soldering operations.
2. Specifications for Rad Hard QML devices are controlled by the Defense Logistics Agency Land and Maritime (DLA). The SMD numbers listed must be
used when ordering.
3. The /PROTO and /SAMPLE are not rated or certified for Total Ionizing Dose (TID) or Single Event Effect (SEE) immunity. These parts are intended for
engineering evaluation purposes only. The /PROTO parts meet the electrical limits and conditions across the temperature range specified in the DLA
SMD and are in the same form and fit as the qualified device. The /SAMPLE die is capable of meeting the electrical limits and conditions specified
in the DLA SMD at +25°C only. The /SAMPLE is a die and does not receive 100% screening across the temperature range to the DLA SMD electrical
limits. These part types do not come with a certificate of conformance because there is no radiation assurance testing and they are not DLA qualified
devices.
4. The evaluation board uses /PROTO parts. The /PROTO parts are not rated or certified for Total Ionizing Dose (TID) or Single Event Effect (SEE)
immunity.
FN8411 Rev.5.00
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ISL70444SEH
Absolute Maximum Ratings
Maximum Supply Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 42V
Maximum Supply Voltage (Note 7). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 42V
Maximum Differential Input Current . . . . . . . . . . . . . . . . . . . . . . . . . . 20mA
Maximum Differential Input Voltage . . . . . . . . 42V or V- - 0.5V to V+ + 0.5V
Min/Max Input Voltage . . . . . . . . . . . . . . . . . . . . 42V or V- - 0.5V to V+ + 0.5V
Max/Min Input Current for Input Voltage >V+ or <V- . . . . . . . . . . . . ±20mA
ESD Tolerance
Human Body Model (Tested per MIL-PRF-883 3015.7). . . . . . . . . . . 2kV
Machine Model (Tested per JESD22-A115-A) . . . . . . . . . . . . . . . . . . 200V
Charged Device Model (Tested per CDM-22CI0ID) . . . . . . . . . . . . . . 750V
Thermal Information
Thermal Resistance (Typical)
JA (°C/W) JC (°C/W)
14 Ld Flatpack Package (Notes 5, 6). . . . .
35
9
Storage Temperature Range. . . . . . . . . . . . . . . . . . . . . . . .-65°C to +150°C
Recommended Operating Conditions
Ambient Operating Temperature Range . . . . . . . . . . . . . .-55°C to +125°C
Maximum Operating Junction Temperature . . . . . . . . . . . . . . . . . .+150°C
Single Supply Voltage. . . . . . . . . . . . . . . . . . . . . . . . 3V ±10% to 36V ±10%
Split Rail Supply Voltage . . . . . . . . . . . . . . . . . . ±1.5V ±10% to ±18V ±10%
CAUTION: Do not operate at or near the maximum ratings listed for extended periods of time. Exposure to such conditions may adversely impact product
reliability and result in failures not covered by warranty.
NOTES:
5. JA is measured in free air with the component mounted on a high-effective thermal conductivity test board with “direct attach” features. See TB379.
6. For JC, the “case temp” location is the center of the package underside.
7. Tested in a heavy ion environment at LET = 86.4MeVcm2/mg at +125°C (TC) for SEB. Refer to Single Event Effects Test Report for more information.
Electrical Specifications VS = ±18V VCM = VO = 0V, RL = Open, TA = +25°C, unless otherwise noted. Boldface limits apply
across the operating temperature range, -55°C to +125°C.
PARAMETER
Offset Voltage
Offset Voltage Temperature Coefficient
Input Offset Channel-to-Channel Match
Input Bias Current
Input Offset Current
SYMBOL
VOS
TCVOS
VOS
IB
IOS
TEST CONDITIONS
VCM = 0V
VCM = V+ to V-
VCM = V+ - 2V to V- + 2V
VCM = V+
VCM = V-
VCM = 0V
VCM = V+
VCM = V-
VCM = V+ - 0.5V
VCM = V- + 0.5V
VCM = V+ to V-
MIN MAX
(Note 8) TYP (Note 8)
20 400
UNIT
µV
80 500
µV
0.5 µV/°C
77 800
µV
117 800
189 370
µV
nA
200 370
nA
262 650
nA
200 370
nA
257 650
nA
-30 0
30
nA
-50 0
50
nA
Common-Mode Input Voltage Range
Common-Mode Rejection Ratio
Power Supply Rejection Ratio
VCMIR
CMRR
PSRR
VCM = V- to V+
VCM = V- to V+
VCM = V+ - 0.5V to V- + 0.5V
VCM = V+ - 0.5V to V- + 0.5V
V- = -18V; V+ = 0.5V to 18V
V+ = 18V; V- = -0.5V to -18V
V- V+
112
70
111
80
128
83
V
dB
dB
dB
dB
dB
dB
Open-Loop Gain
AVOL
RL = 10kΩ to ground
125
96
dB
dB
Output Voltage High (VOUT to V+)
Output Voltage Low (VOUT to V-)
Output Short-Circuit Current
VOH RL = No load
78 160
RL = 10kΩ
118 175
VOL RL = No load
73 160
RL = 10kΩ
110 175
ISRC Sourcing; VIN = 0V, VOUT = -18V
10
mV
mV
mV
mV
mA
FN8411 Rev.5.00
Jan 19, 2018
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