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DATASHEET
ISL70244SEH
19MHz Radiation Hardened 40V Dual Rail-to-Rail Input-Output, Low-Power
Operational Amplifier
FN8592
Rev 3.00
Feb 23, 2018
The ISL70244SEH features two low-power amplifiers
optimized to provide maximum dynamic range. These op
amps feature a unique combination of rail-to-rail operation on
the input and output as well as a slew enhanced front end that
provides ultra fast slew rates positively proportional to a given
step size; thereby increasing accuracy under transient
conditions, whether it’s periodic or momentary. They also offer
low power, low offset voltage, and low temperature drift,
making it ideal for applications requiring both high DC
accuracy and AC performance. With <5µs recovery for Single
Event Transients (SET) (LETTH = 86.4MeV•cm2/mg), the
number of filtering components needed is drastically reduced.
The ISL70244SEH is also immune to single-event latch-up
because it is fabricated in the Renesas proprietary PR40
Silicon On Insulator (SOI) process.
The amplifiers are designed to operate over a single supply
range of 2.7V to 40V or a split supply voltage range of ±1.35V to
±20V. Applications for these amplifiers include precision
instrumentation, data acquisition, precision power supply
controls, and process controls.
The ISL70244SEH is available in a 10 Ld hermetic ceramic
flatpack that operates across the temperature range of -55°C
to +125°C.
Related Literature
For a full list of related documents, visit our website
IS70244SEH product page
Features
• Electrically screened to DLA SMD # 5962-13248
Acceptance tested to 50krad(Si) (LDR) wafer-by-wafer
• <5µs recovery from SET (LETTH = 86.4MeV•cm2/mg)
• Unity gain stable
• Rail-to-rail input and output
• Wide gain bandwidth product . . . . . . . . . . . . . . . . . . . . 19MHz
• Wide single and dual supply range. . . 2.7V to 40V maximum
• Low input offset voltage . . . . . . . 400µV (+25°C, maximum)
• Low current consumption (per amplifier) . . . . 1.2mA, typical
• No phase reversal with input overdrive
• Slew rate
- Large signal . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 60V/µs
• Operating temperature range. . . . . . . . . . . .-55°C to +125°C
• Radiation tolerance
- High dose rate (50-300rad(Si)/s). . . . . . . . . . . 300krad(Si)
- Low dose rate (0.01rad(Si)/s) . . . . . . . . . . . . 100krad(Si)*
- SEL/SEB LETTH (VS = ±19V) . . . . . . . . . 86.4MeV•cm2/mg
* Product capability established by initial characterization.
Applications
• Precision instruments
• Active filter blocks
• Data acquisition
• Power supply control
• Process control
ILOAD
Rs
VSRC
+
-
R3 R1
R2
L
O
A
D
R4
VREF
V+
-
ISL70244SEH
+
V-
VOU
T
R1 = R3 = 10kO
R2 = R4 = 100kO
Gain = R2/R1 = 10
V+ = 36V; V- = 0V; VREF = 18V
VOUT = VREF + Gain(ILOAD* RS)
FIGURE 1. TYPICAL APPLICATION: SINGLE-SUPPLY, HIGH-SIDE
CURRENT SENSE AMPLIFIER
1400
1200
1000
800
600
400
51
200
0
0 0.2 0.4 0.8 1.0 1.2 1.4 1.6 1.8 2.0
TRANSIENT DURATION (µs)
FIGURE 2. TYPICAL SINGLE EVENT TRANSIENT DURATION AT +25°C
LET = 60MeV•cm2/ mg IN UNITY GAIN (VS = ±18V)
FN8592 Rev 3.00
Feb 23, 2018
Page 1 of 24

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ISL70244SEH
Pin Configuration
OUTA
-INA
+INA
NC
V-
Pin Descriptions
PIN NUMBER
5
7
8
9
10
1
2
4
3
6
PIN NAME
V-
+INB
-INB
OUTB
V+
OUTA
-INA
NC
+INA
LID
V+
600Ω
-IN
600Ω
+IN
CIRCUIT 1
V-
ISL70244SEH
(10 LD FLATPACK)
TOP VIEW
1 10
29
3 -+
8
4 +- 7
56
V+
OUTB
-INB
+INB
LID
EQUIVALENT ESD CIRCUIT
DESCRIPTION
Circuit 3
Negative power supply
Circuit 1
Amplifier B noninverting input
Circuit 1
Amplifier B inverting input
Circuit 2
Amplifier B output
Circuit 3
Positive power supply
Circuit 2
Amplifier A output
Circuit 1
Amplifier A inverting input
- This pin is not electrically connected internally
Circuit 1
Amplifier A noninverting input
NA Unbiased, tied to package lid
V+
OUT
V-
CIRCUIT 2
V+
CAPACITIVELY
TRIGGERED ESD
CLAMP
V-
CIRCUIT 3
FN8592 Rev 3.00
Feb 23, 2018
Page 2 of 24

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ISL70244SEH
Ordering Information
ORDERING SMD NUMBER
(Note 2)
PART
NUMBER
(Note 1)
TEMP RANGE
(°C)
PACKAGE
(RoHS COMPLIANT)
PKG.
DWG. #
5962F1324801VXC
ISL70244SEHVF
-55 to +125
10 Ld Flatpack
K10.A
5962F1324801V9A
ISL70244SEHVX
-55 to +125
Die
N/A
ISL70244SEHF/PROTO (Note 3)
-55 to +125
10 Ld Flatpack
K10.A
N/A
ISL70244SEHX/SAMPLE (Note 3)
-55 to +125
Die
N/A
ISL70244SEHEV1Z (Note 4)
Evaluation Board
NOTES:
1. These Pb-free Hermetic packaged products employ 100% Au plate - e4 termination finish, which is RoHS compliant and compatible with both SnPb
and Pb-free soldering operations.
2. Specifications for Rad Hard QML devices are controlled by the Defense Logistics Agency Land and Maritime (DLA). The SMD numbers listed must be
used when ordering.
3. The /PROTO and /SAMPLE parts are not rated or certified for Total Ionizing Dose (TID) or Single Event Effect (SEE) immunity. These parts are intended
for engineering evaluation purposes only. The /PROTO parts meet the electrical limits and conditions across the temperature range specified in the
DLA SMD and are in the same form and fit as the qualified device. The /SAMPLE die is capable of meeting the electrical limits and conditions
specified in the DLA SMD at +25°C only. The /SAMPLE is a die and does not receive 100% screening across the temperature range to the DLA SMD
electrical limits. These part types do not come with a certificate of conformance because there is no radiation assurance testing and they are not
DLA qualified devices.
4. Evaluation board uses the /PROTO parts. The /PROTO parts are not rated or certified for Total Ionizing Dose (TID) or Single Event Effect (SEE) immunity.
FN8592 Rev 3.00
Feb 23, 2018
Page 3 of 24

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ISL70244SEH
Absolute Maximum Ratings
Maximum Supply Voltage Differential (V+ to V-) . . . . . . . . . . . . . . . . . . . 42V
Maximum Supply Voltage Differential (V+ to V-) (Note 7) . . . . . . . . . . . 38V
Maximum Differential Input Current . . . . . . . . . . . . . . . . . . . . . . . . . . 20mA
Maximum Differential Input Voltage . . . . . . . 42V or (V- - 0.5V) to V+ + 0.5V
Min/Max Input Voltage . . . . . . . . . . . . . . . . . . . 42V or (V- - 0.5V) to V+ + 0.5V
Max/Min Input Current for Input Voltage >V+ or <V- . . . . . . . . . . . . ±20mA
ESD Tolerance
Human Body Model (Tested per MIL-PRF-883 3015.7). . . . . . . . . . . 2kV
Machine Model (Tested per JESD22-A115-A) . . . . . . . . . . . . . . . . . . 200V
Charged Device Model (Tested per CDM-22CI0ID) . . . . . . . . . . . . . . 750V
Thermal Information
Thermal Resistance (Typical)
JA (°C/W) JC (°C/W)
10 Ld Flatpack Package (Notes 5, 6). . . . .
44
10
Storage Temperature Range. . . . . . . . . . . . . . . . . . . . . . . .-65°C to +150°C
Recommended Operating Conditions
Ambient Operating Temperature Range . . . . . . . . . . . . . .-55°C to +125°C
Maximum Operating Junction Temperature . . . . . . . . . . . . . . . . . .+150°C
Single Supply Voltage. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2.7V to 39.6V
Split Rail Supply Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . ±1.35V to ±19.8V
CAUTION: Do not operate at or near the maximum ratings listed for extended periods of time. Exposure to such conditions may adversely impact product
reliability and result in failures not covered by warranty.
NOTES:
5. JA is measured in free air with the component mounted on a high-effective thermal conductivity test board with “direct attach” features. See TB379
for details.
6. For JC, the “case temp” location is the center of the package underside.
7. Tested in a heavy ion environment at LET = 86.4MeVcm2/mg at +125°C (TC) for SEB. Refer to Single Event Effects Test Report for more information.
Electrical Specifications VS = ±19.8V, VCM = VO = 0V, RL = Open, TA= +25°C, unless otherwise noted. Boldface limits apply across
the operating temperature range, -55°C to +125°C; over a total ionizing dose of 300krad(Si) with exposure of a high dose rate of 50 to 300rad(Si)/s or
over a total ionizing dose of 50krad(Si) with exposure at a low dose rate of <10mrad(Si)/s.
PARAMETER
SYMBOL
TEST CONDITIONS
MIN MAX
(Note 8) TYP (Note 8)
UNIT
Offset Voltage
Offset Voltage Temperature
Coefficient
VOS
TCVOS
VCM = 0V
VCM = V+ to V-
VCM = V+ - 2V to V- + 2V
-400 25 400
µV
-500 110 500
µV
- 0.5 - µV/°C
Input Offset Channel-to-Channel
Match
Input Bias Current
Input Offset Current
VOS
IB
IOS
VCM = V+
VCM = V-
VCM = 0V
VCM = V+
VCM = V-
VCM = V+ - 0.5V
VCM = V- + 0.5V
VCM = V+ to V-
- 135 800
- 128 800
-500 210 500
-500 200 500
-650 290 650
-500 200 500
-650 257 650
-30 0 30
-50 0
50
µV
µV
nA
nA
nA
nA
nA
nA
nA
Common-Mode Input Voltage Range
Common-Mode Rejection Ratio
Power Supply Rejection Ratio
VCMIR
CMRR
PSRR
VCM = V- to V+
VCM = V- to V+
VCM = V+ - 0.5V to V- + 0.5V
VCM = V+ - 0.5V to V- + 0.5V
V- = -18V; V+ = 0.5V to 18V;
V+ = 18V; V- = -0.5V to -18V
V- - V+
- 112 -
70 -
-
- 111 -
80 -
-
- 128 -
83 -
-
V
dB
dB
dB
dB
dB
dB
Open-Loop Gain
AVOL
RL = 10kΩ to ground
- 125
90 -
-
-
dB
dB
Output Voltage High (VOUT to V+)
VOH RL = No Load
RL = 10kΩ
-
26 160
mV
-
78 175
mV
FN8592 Rev 3.00
Feb 23, 2018
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ISL70244SEH
Electrical Specifications VS = ±19.8V, VCM = VO = 0V, RL = Open, TA= +25°C, unless otherwise noted. Boldface limits apply across
the operating temperature range, -55°C to +125°C; over a total ionizing dose of 300krad(Si) with exposure of a high dose rate of 50 to 300rad(Si)/s or
over a total ionizing dose of 50krad(Si) with exposure at a low dose rate of <10mrad(Si)/s.
PARAMETER
SYMBOL
TEST CONDITIONS
MIN MAX
(Note 8) TYP (Note 8)
UNIT
Output Voltage Low (VOUT to V-)
Output Short-Circuit Current
Output Short-Circuit Current
Supply Current/Amplifier
VOL RL = No load
- 21 160
RL = 10kΩ
- 64 175
ISRC Sourcing; VIN = 0V, VOUT = -18V
10
-
-
ISNK Sinking; VIN = 0V, VOUT = +18V
10
-
-
IS Unity gain
- 1.6 2.2
TA = +25°C post HDR/LDR
radiation
- - 2.2
mV
mV
mA
mA
mA
mA
AC SPECIFICATIONS
TA = -55°C to +125°C
- 2.2 2.8 mA
Gain Bandwidth Product
Voltage Noise Density
Current Noise Density
Large Signal Slew Rate
GBWP
en
in
SR
AV = 1, RL = 10k
f = 10kHz
f = 10kHz
AV = 1, RL = 10kΩVO = 10VP-P
17 19
- 11.3
- 0.312
60 -
-
-
-
-
MHz
nV/Hz
pA/Hz
V/µs
Electrical Specifications VS = ±2.5V, VCM = VO = 0V, RL = Open, TA= +25°C, unless otherwise noted. Boldface limits apply across
the operating temperature range, -55°C to +125°C; over a total ionizing dose of 300krad(Si) with exposure of a high dose rate of 50 to 300rad(Si)/s or
over a total ionizing dose of 50krad(Si) with exposure at a low dose rate of <10mrad(Si)/s.
PARAMETER
SYMBOL
TEST CONDITIONS
MIN MAX
(Note 8) TYP (Note 8)
UNIT
Offset Voltage
Offset Voltage Temperature
Coefficient
VOS
TCVOS
VCM = 0V
VCM = V+ to V-
VCM = V+ - 2V to V- + 2V
-400 20 400
µV
-500 80 500
µV
- 0.5 - µV/°C
Input Offset Channel-to-Channel
Match
Input Bias Current
Input Offset Current
VOS
IB
IOS
VCM = V+
VCM = V-
VCM = 0V
VCM = V+
VCM = V-
VCM = V+ - 0.5V
VCM = V- + 0.5V
VCM = V+ to V-
- 132 800
- 127 800
-400 226 400
-400 182 400
-580 260 580
-400 181 400
-580 224 580
-30 0 30
-50 0 50
µV
µV
nA
nA
nA
nA
nA
nA
nA
Common-Mode Input Voltage Range
Common-Mode Rejection Ratio
VCMIR
CMRR
VCM = V- to V+
VCM = V- to V+
VCM = V+ - 0.5V to V- + 0.5V
VCM = V+ - 0.5V to V- + 0.5V
V- - V+
- 92 -
70 -
-
- 91 -
74 -
-
V
dB
dB
dB
dB
FN8592 Rev 3.00
Feb 23, 2018
Page 5 of 24