ISL70219ASEH.pdf 데이터시트 (총 25 페이지) - 파일 다운로드 ISL70219ASEH 데이타시트 다운로드

No Preview Available !

DATASHEET
ISL70219ASEH
40V Radiation Hardened and SET Enhanced, Precision Low-Power Operational
Amplifier
FN8459
Rev. 2.00
Jun 11, 2018
The ISL70219ASEH is a very high precision amplifier featuring
the perfect combination of low noise vs power consumption.
The ISL70219ASEH’s low offset voltage, low IBIAS current, and
low temperature drift make it the ideal choice for applications
requiring both high DC accuracy and AC performance. The
combination of high precision, low noise, low power, and a
small footprint provides outstanding value and flexibility
relative to similar competitive parts.
Applications for these amplifiers include precision active
filters, medical and analytical instrumentation, precision
power supply controls, and industrial controls.
The ISL70219ASEH is offered in a 10 Ld hermetic ceramic
flatpack. The device is packaged in industry standard pin
configurations and operates across the extended temperature
range from -55°C to +125°C.
Related Literature
For a full list of related documents, visit our website
ISL70219ASEH product page
Applications
• Precision instrumentation
• Spectral analysis equipment
• Active filter blocks, thermocouples, and RTD reference
buffers
• Data acquisition and power supply control
Features
• Electrically screened to DLA SMD# 5962-14226
• Low input offset voltage. . . . . . . . . . . . . . ±110µV, maximum
• Superb offset temperature coefficient. . .1µV/°C, maximum
• Input bias current . . . . . . . . . . . . . . . . . . . . ±15nA, maximum
• Input bias current TC . . . . . . . . . . . . . . . ±5pA/°C, maximum
• Low current consumption . . . . . . . . . . . . . . . . . . . . . . . 440µA
• Voltage noise . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8nV/Hz
• Wide supply range . . . . . . . . . . . . . . . . . . . . . . . . . .4.5V to 36V
• Operating temperature range. . . . . . . . . . . .-55°C to +125°C
• Radiation environment
- SEB LETTH (VS = ±18V) . . . . . . . . . . . . . . 86.4MeV•cm2/mg
- SET recovery time . . . . . . . . . . . 10µs at 60MeV•cm2/m
- SEL immune (SOI process)
- Total dose HDR (50 to 300rad(Si)/s). . . . . . . . 300krad(Si)
- Total dose LDR (10mrad(Si)/s) . . . . . . . . . . . 100krad(Si) *
* Product capability established by initial characterization. The
EH version is acceptance tested on a wafer-by-wafer basis to
50krad(Si) at low dose rate.
C1
8.2nF
V+
-
R1 R2
VIN
1.84k 4.93k
ISL70219ASEH
+
OUTPUT
3.3nF
C2
V-
FIGURE 1. TYPICAL APPLICATION: SALLEN-KEY LOW PASS FILTER
(FC = 10kHz)
16
14
12
10
8
6
4
2
0
-8 -6 -4 -2 0
SET EXTREME DEVIATION (V)
FIGURE 2. SET DEVIATION vs DURATION FOR
LET = 60MeV•cm2/mg (VS = ±18V)
2
4
FN8459 Rev. 2.00
Jun 11, 2018
Page 1 of 25

No Preview Available !

ISL70219ASEH
Pin Configuration
10 LD FLATPACK
TOP VIEW
OUTA
-INA
+INA
NC
V-
1 10
2
3
-A+
9
8
4 +B- 7
56
V+
OUTB
-INB
+INB
LID
Pin Descriptions
PIN NUMBER
1
2
3
10
7
8
9
5
-
4
6
PIN NAME
OUTA
-INA
+INA
V+
+INB
-INB
OUTB
V-
E-Pad
NC
LID
500Ω
IN-
500Ω
V+
IN+
CIRCUIT 1
V-
EQUIVALENT ESD CIRCUIT
Circuit 2
Circuit 1
Circuit 1
Circuit 3
Circuit 1
Circuit 1
Circuit 2
Circuit 3
None
-
NA
DESCRIPTION
Amplifier A output
Amplifier A inverting input
Amplifier A noninverting input
Positive power supply
Amplifier B noninverting input
Amplifier B inverting input
Amplifier B output
Negative power supply
E-Pad under package (unbiased, tied to package lid)
No connect
Unbiased, tied to package lid
V+
OUT
V-
CIRCUIT 2
V+
CAPACITIVELY
COUPLED
ESD CLAMP
V-
CIRCUIT 3
FN8459 Rev. 2.00
Jun 11, 2018
Page 2 of 25

No Preview Available !

ISL70219ASEH
Ordering Information
ORDERING/SMD NUMBER
(Note 2)
PART NUMBER (Note 1)
TEMP RANGE
(°C)
PACKAGE
(RoHS COMPLIANT)
PKG.
DWG. #
5962F1422602VYC
ISL70219ASEHVF
-55 to +125
10 Ld Flatpack
K10.A
5962F1422602V9A
ISL70219ASEHVX
-55 to +125
Die
N/A
ISL70219ASEHF/PROTO (Note 3)
-55 to +125
10 Ld Flatpack
K10.A
N/A
ISL70219ASEHVX/SAMPLE (Note 3)
-55 to +125
Die
N/A
ISL70219ASEHEV1Z (Note 4)
Evaluation Board
NOTES:
1. These Pb-free Hermetic packaged products employ 100% Au plate - e4 termination finish, which is RoHS compliant and compatible with both SnPb
and Pb-free soldering operations.
2. Specifications for Rad Hard QML devices are controlled by the Defense Logistics Agency Land and Maritime (DLA). The SMD numbers listed must be
used when ordering.
3. The /PROTO and /SAMPLE are not rated or certified for Total Ionizing Dose (TID) or Single Event Effect (SEE) immunity. These parts are intended for
engineering evaluation purposes only. The /PROTO parts meet the electrical limits and conditions across the temperature range specified in the DLA
SMD and are in the same form and fit as the qualified device. The /SAMPLE die is capable of meeting the electrical limits and conditions specified
in the DLA SMD at +25°C only. The /SAMPLE is a die and does not receive 100% screening across the temperature range to the DLA SMD electrical
limits. These part types do not come with a certificate of conformance because there is no radiation assurance testing and they are not DLA qualified
devices.
4. Evaluation board uses the /PROTO parts. The /PROTO parts are not rated or certified for Total Ionizing Dose (TID) or Single Event Effect (SEE) immunity.
FN8459 Rev. 2.00
Jun 11, 2018
Page 3 of 25

No Preview Available !

ISL70219ASEH
Absolute Maximum Ratings
Maximum Supply Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 42V
Maximum Supply Voltage (Note 7). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 36V
Maximum Differential Input Current . . . . . . . . . . . . . . . . . . . . . . . . . . 20mA
Maximum Differential Input Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20V
Min/Max Input Voltage . . . . . . . . . . . . . . . . . . . . . . . . . V- - 0.5V to V+ + 0.5V
Max/Min Input Current for Input Voltage >V+ or <V- . . . . . . . . . . . . ±20mA
Output Short-Circuit Duration (1 output at a time). . . . . . . . . . . . Indefinite
ESD Rating
Human Body Model (Tested per MIL-PRF-883 3015.7). . . . . . . . . . . 2kV
Machine Model (Tested per EIA/JESD22-A115-A) . . . . . . . . . . . . . . 200V
Charged Device Model (Tested per JESD22-C101D) . . . . . . . . . . . . 750V
Thermal Information
Thermal Resistance (Typical)
JA (°C/W) JC (°C/W)
10 Ld Flatpack Package (Notes 5, 6). . . . .
40
8
Storage Temperature Range. . . . . . . . . . . . . . . . . . . . . . . .-65°C to +150°C
Recommended Operating Conditions
Ambient Operating Temperature Range . . . . . . . . . . . . . .-55°C to +125°C
Maximum Operating Junction Temperature . . . . . . . . . . . . . . . . . .+150°C
Single Supply Voltage. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4.5V to 36.0V
Split Rail Supply Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . ±2.25V to ±18V
CAUTION: Do not operate at or near the maximum ratings listed for extended periods of time. Exposure to such conditions can adversely impact product
reliability and result in failures not covered by warranty.
NOTES:
5. JA is measured in free air with the component mounted on a high-effective thermal conductivity test board with “direct attach” features. See TB379
for details.
6. For JC, the “case temp” location is the center of the package underside.
7. Tested in a heavy ion environment at LET = 86.4MeV•cm2/mg at +125°C (TC) for SEB. Refer to Single Event Effects Test Report for more information.
Electrical Specifications ±18.0V VS = ±18.0V, VCM = VO = 0V, RL = Open, TA= +25°C, unless otherwise noted. Boldface limits apply
across the operating temperature range, -55°C to +125°C; over a total ionizing dose of 300krad(Si) with exposure at a high dose rate of 50ad(Si)/s to
300rad(Si)/s or over a total ionizing dose of 50krad(Si) with exposure at a low dose rate of <10mrad(Si)/s, unless otherwise noted.
PARAMETER
SYMBOL
TEST CONDITIONS
MIN MAX
(Note 8) TYP (Note 8)
UNIT
Input Offset Voltage
VOS
- 10 85
µV
-
- 110
µV
Offset Voltage Drift
Input Bias Current
Input Bias Current Temperature
Coefficient
Input Offset Current
Input Offset Current Temperature
Coefficient
TCVOS
IB
TCIB
IOS
TCIOS
(Note 9)
TA = +25°C
TA = -55°C, +125°C
TA = +25°C, post HDR/LDR Rad
(Note 9)
TA = +25°C
TA = -55°C, +125°C
TA = +25°C, post HDR/LDR Rad
(Note 9)
-
-2.50
-5
-15
-5
-2.5
-3
-10
-3
0.1
0.08
-
-
1
0.08
-
-
0.42
1
2.50
5
15
5
2.5
3
10
3
µV/°C
nA
nA
nA
pA/°C
nA
nA
nA
pA/°C
Input Voltage Range
Common-Mode Rejection Ratio
VCM
CMRR
Guaranteed by CMRR test
VCM = -16V to +16V
-16 -
120 145
120 -
16
-
-
V
dB
dB
Power Supply Rejection Ratio
PSRR
VS = ±2.25V to ±20V
120 145
120 -
-
-
dB
dB
Open-Loop Gain
Output Voltage High
AVOL
VO = -16V to +16V, RL = 10kΩ to
ground
3000
14000
VOH RL = 10kΩ to ground
16.5
16.2
16.7
-
RL = 2kΩ to ground
16.3
16.0
16.5
-
-
-
-
-
-
V/mV
V
V
V
V
FN8459 Rev. 2.00
Jun 11, 2018
Page 4 of 25

No Preview Available !

ISL70219ASEH
Electrical Specifications ±18.0V VS = ±18.0V, VCM = VO = 0V, RL = Open, TA= +25°C, unless otherwise noted. Boldface limits apply
across the operating temperature range, -55°C to +125°C; over a total ionizing dose of 300krad(Si) with exposure at a high dose rate of 50ad(Si)/s to
300rad(Si)/s or over a total ionizing dose of 50krad(Si) with exposure at a low dose rate of <10mrad(Si)/s, unless otherwise noted. (Continued)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN MAX
(Note 8) TYP (Note 8)
UNIT
Output Voltage Low
VOL RL = 10kΩ to ground
-
-16.7
-16.5
- - -16.2
V
V
RL = 2kΩ to ground
-
-16.5
-16.3
- - -16.0
V
V
Supply Current/Amplifier
IS
-
0.490
0.725
mA
- - 0.85 mA
Output Short-Circuit Current
ISC Sourcing: VIN = 0V, VOUT = -16V
-
41
-
(Note 9)
mA
Sinking: VIN = 0V, VOUT = +16V - -42 -
(Note 9)
mA
Supply Voltage Range
AC SPECIFICATIONS
VSUPPLY
Guaranteed by PSRR
±2.25
-
±20
V
Gain Bandwidth Product
Voltage Noise VP-P
Voltage Noise Density
Voltage Noise Density
Voltage Noise Density
Voltage Noise Density
Current Noise Density
TRANSIENT RESPONSE
GBWP
enVp-p
en
en
en
en
in
AV = 1k, RL = 2kΩ (Note 9)
0.1Hz to 10Hz (Note 9)
f = 10Hz (Note 9)
f = 100Hz (Note 9)
f = 1kHz (Note 9)
f = 10kHz (Note 9)
f = 1kHz (Note 9)
- 1.5 -
MHz
- 0.25 -
µVP-P
- 10 - nV/Hz
- 8.2 - nV/Hz
- 8 - nV/Hz
- 8 - nV/Hz
- 0.1 - pA/Hz
Slew Rate, VOUT 20% to 80%
SR AV = 1, RL = 2kΩVO = 4VP-P
0.3 0.5
0.2 -
-
-
V/µs
V/µs
Rise Time
10% to 90% of VOUT
tr, tf,
AV = 1, VOUT = 50mVP-P,
Small Signal RL = 10kΩto VCM
- 130 450
- - 625
ns
ns
Fall Time
90% to 10% of VOUT
AV = 1, VOUT = 50mVP-P, RL = 10kΩ
to VCM
-
-
130 600
- 700
ns
ns
Settling Time to 0.1%
10V Step; 10% to VOUT
Settling Time to 0.01%
10V Step; 10% to VOUT
Settling Time to 0.1%
4V Step; 10% to VOUT
Settling Time to 0.01%
4V Step; 10% to VOUT
Output Positive Overload Recovery
Time
Output Negative Overload Recovery
Time
Positive Overshoot
ts
AV = -1, VOUT = 10VP-P, RL = 5kΩ to
-
VCM (Note 9)
AV = -1, VOUT = 10VP-P, RL = 5kΩ to
VCM (Note 9)
-
AV = -1, VOUT = 4VP-P, RL = 5kΩ to
VCM (Note 9)
-
AV = -1, VOUT = 4VP-P, RL = 5kΩ to
VCM (Note 9)
-
tOL
AV = -100, VIN = 0.2VP-P, RL = 2kΩ to
-
VCM (Note 9)
AV = -100, VIN = 0.2VP-P, RL = 2kΩ to
VCM (Note 9)
-
OS+ AV = 1, VOUT = 10VP-P, Rf = 0Ω
RL = 2kΩto VCM
-
-
21
24
13
18
5.6
10.6
15
-
-
-
-
-
-
-
-
33
µs
µs
µs
µs
µs
µs
%
%
Negative Overshoot
OS- AV = 1, VOUT = 10VP-P, Rf = 0Ω
RL = 2kΩto VCM
- 15 -
- - 33
%
%
FN8459 Rev. 2.00
Jun 11, 2018
Page 5 of 25