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DATASHEET
40V Radiation Hardened and SET Enhanced, Precision
Low-Power, Operational Amplifier
ISL70219ASEH
The ISL70219ASEH is a very high precision amplifier featuring
the perfect combination of low noise vs power consumption.
Low offset voltage, low IBIAS current, and low temperature drift
make it the ideal choice for applications requiring both high
DC accuracy and AC performance. The combination of high
precision, low noise, low power, and a small footprint provides
the user with outstanding value and flexibility relative to
similar competitive parts.
Applications for these amplifiers include precision active
filters, medical and analytical instrumentation, precision
power supply controls, and industrial controls.
The ISL70219ASEH is offered in a 10 lead hermetic ceramic
flatpack. The device is packaged in industry standard pin
configurations and operate across the extended temperature
range from -55°C to +125°C.
Related Literature
• For a full list of related documents, visit our website
- ISL70219ASEH product page
Applications
• Precision instrumentation
• Spectral analysis equipment
• Active filter blocks, thermocouples and RTD reference
buffers
• Data acquisition and power supply control
Features
• Electrically screened to DLA SMD# 5962-14226
• Low input offset voltage. . . . . . . . . . . . . . ±110µV, maximum
• Superb offset temperature coefficient. . .1µV/°C, maximum
• Input bias current . . . . . . . . . . . . . . . . . . . . ±15nA, maximum
• Input bias current TC . . . . . . . . . . . . . . . ±5pA/°C, maximum
• Low current consumption . . . . . . . . . . . . . . . . . . . . . . . 440µA
• Voltage noise . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8nV/Hz
• Wide supply range . . . . . . . . . . . . . . . . . . . . . . . . . .4.5V to 36V
• Operating temperature range. . . . . . . . . . . .-55°C to +125°C
• Radiation environment
- SEB LETTH (VS = ±18V) . . . . . . . . . . . . . . 86.4MeV•cm2/mg
- SET recovery time . . . . . . . . . . . 10µs at 60MeV•cm2/m
- SEL immune (SOI process)
- Total dose HDR (50 to 300rad(Si)/s). . . . . . . . 300krad(Si)
- Total dose LDR (10mrad(Si)/s) . . . . . . . . . . . 100krad(Si) *
* Product capability established by initial characterization. The
EH version is acceptance tested on a wafer-by-wafer basis to
50krad(Si) at low dose rate.
C1
8.2nF
V+
-
R1 R2
ISL70219ASEH
OUTPUT
VIN +
1.84k 4.93k
3.3nF
C2
V-
FIGURE 1. TYPICAL APPLICATION: SALLEN-KEY LOW PASS FILTER
(FC = 10kHz)
16
14
12
10
8
6
4
2
0
-8 -6 -4 -2 0
SET EXTREME DEVIATION (V)
FIGURE 2. SET DEVIATION vs DURATION FOR
LET = 60MeV•cm2/mg (VS = ±18V)
2
4
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CAUTION: These devices are sensitive to electrostatic discharge; follow proper IC Handling Procedures.
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Pin Configuration
ISL70219ASEH
(10 LD FLATPACK)
TOP VIEW
OUTA
-INA
+INA
NC
V-
1 10
2
3
-A+
9
8
4 +B- 7
56
ISL70219ASEH
V+
OUTB
-INB
+INB
LID
Pin Descriptions
PIN NUMBER
1
2
3
10
7
8
9
-
-
-
5
-
-
-
-
4
6
PIN NAME
OUTA
-INA
+INA
V+
+INB
-INB
OUTB
OUTC
-INC
+INC
V-
+IND
-IND
OUTD
E-Pad
NC
LID
500Ω
IN-
500Ω
V+
IN+
CIRCUIT 1
V-
EQUIVALENT ESD CIRCUIT
Circuit 2
Circuit 1
Circuit 1
Circuit 3
Circuit 1
Circuit 1
Circuit 2
Circuit 2
Circuit 1
Circuit 1
Circuit 3
Circuit 1
Circuit 1
Circuit 2
None
-
NA
DESCRIPTION
Amplifier A output
Amplifier A inverting input
Amplifier A noninverting input
Positive power supply
Amplifier B noninverting input
Amplifier B inverting input
Amplifier B output
Amplifier C output
Amplifier C inverting input
Amplifier C noninverting input
Negative power supply
Amplifier D noninverting input
Amplifier D inverting input
Amplifier D output
E-Pad under package (unbiased, tied to package lid)
No connect
Unbiased, tied to package lid
V+
OUT
V-
CIRCUIT 2
V+
CAPACITIVELY
COUPLED
ESD CLAMP
V-
CIRCUIT 3
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ISL70219ASEH
Ordering Information
ORDERING/SMD NUMBER
(Note 2)
PART
NUMBER
(Note 1)
TEMP RANGE
(°C)
PACKAGE
(RoHS COMPLIANT)
PKG.
DWG. #
5962F1422602VYC
ISL70219ASEHVF
-55 to +125
10 Ld Flatpack
K10.A
5962F1422602V9A
ISL70219ASEHVX
-55 to +125
Die
N/A
ISL70219ASEHF/PROTO
-55 to +125
10 Ld Flatpack
K10.A
N/A
ISL70219ASEHVX/SAMPLE
-55 to +125
Die
N/A
ISL70219ASEHEV1Z
Evaluation Board
NOTES:
1. These Intersil Pb-free Hermetic packaged products employ 100% Au plate - e4 termination finish, which is RoHS compliant and compatible with both
SnPb and Pb-free soldering operations.
2. Specifications for Rad Hard QML devices are controlled by the Defense Logistics Agency Land and Maritime (DLA). The SMD numbers listed must be
used when ordering.
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ISL70219ASEH
Absolute Maximum Ratings
Maximum Supply Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 42V
Maximum Supply Voltage (Note 5). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 36V
Maximum Differential Input Current . . . . . . . . . . . . . . . . . . . . . . . . . . 20mA
Maximum Differential Input Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20V
Min/Max Input Voltage . . . . . . . . . . . . . . . . . . . . . . . . . V- - 0.5V to V+ + 0.5V
Max/Min Input Current for Input Voltage >V+ or <V- . . . . . . . . . . . . ±20mA
Output Short-Circuit Duration (1 output at a time). . . . . . . . . . . . Indefinite
ESD Rating
Human Body Model (Tested per MIL-PRF-883 3015.7). . . . . . . . . . . 2kV
Machine Model (Tested per EIA/JESD22-A115-A) . . . . . . . . . . . . . . 200V
Charged Device Model (Tested per JESD22-C101D) . . . . . . . . . . . . 750V
Thermal Information
Thermal Resistance (Typical)
JA (°C/W) JC (°C/W)
10 Ld Flatpack Package (Notes 3, 4). . . . .
40
8
Storage Temperature Range. . . . . . . . . . . . . . . . . . . . . . . .-65°C to +150°C
Recommended Operating Conditions
Ambient Operating Temperature Range . . . . . . . . . . . . . .-55°C to +125°C
Maximum Operating Junction Temperature . . . . . . . . . . . . . . . . . .+150°C
Single Supply Voltage. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4.5V to 36.0V
Split Rail Supply Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . ±2.25V to ±18V
CAUTION: Do not operate at or near the maximum ratings listed for extended periods of time. Exposure to such conditions may adversely impact product
reliability and result in failures not covered by warranty.
NOTES:
3. JA is measured in free air with the component mounted on a high-effective thermal conductivity test board with “direct attach” features. See Tech
Brief TB379 for details.
4. For JC, the “case temp” location is the center of the package underside.
5. Tested in a heavy ion environment at LET = 86.4MeV•cm2/mg at +125°C (TC) for SEB. Refer to Single Event Effects Test Report for more information.
Electrical Specifications ±18.0V VS = ±18.0V, VCM = VO = 0V, RL = Open, TA= +25°C, unless otherwise noted. Boldface limits apply
across the operating temperature range, -55°C to +125°C; over a total ionizing dose of 300krad(Si) with exposure at a high dose rate of 50ad(Si)/s to
300rad(Si)/s or over a total ionizing dose of 50krad(Si) with exposure at a low dose rate of <10mrad(Si)/s, unless otherwise noted.
PARAMETER
DESCRIPTION
TEST CONDITIONS
MIN MAX
(Note 6) TYP (Note 6)
UNIT
VOS Input Offset Voltage
- 10 85
µV
-
- 110
µV
TCVOS
IB
TCIB
IOS
TCIOS
Offset Voltage Drift
Input Bias Current
Input Bias Current Temperature
Coefficient
Input Offset Current
Input Offset Current Temperature
Coefficient
(Note 7)
TA = +25°C
TA = -55°C, +125°C
TA = +25°C, post HDR/LDR Rad
(Note 7)
TA = +25°C
TA = -55°C, +125°C
TA = +25°C, post HDR/LDR Rad
(Note 7)
-
-2.50
-5
-15
-5
-2.5
-3
-10
-3
0.1
0.08
-
-
1
0.08
-
-
0.42
1
2.50
5
15
5
2.5
3
10
3
µV/°C
nA
nA
nA
pA/°C
nA
nA
nA
pA/°C
VCM
CMRR
Input Voltage Range
Common-Mode Rejection Ratio
Guaranteed by CMRR test
VCM = -16V to +16V
-16 -
120 145
120 -
16
-
-
V
dB
dB
PSRR
Power Supply Rejection Ratio
VS = ±2.25V to ±20V
120 145
120 -
-
-
dB
dB
AVOL
VOH
Open-Loop Gain
Output Voltage High
VOL Output Voltage Low
VO = -16V to +16V, RL = 10kΩ to
ground
RL = 10kΩ to ground
RL = 2kΩ to ground
RL = 10kΩ to ground
RL = 2kΩ to ground
3,000
16.5
16.2
16.3
16.0
-
-
-
-
14,000
16.7
-
16.5
-
-16.7
-
-16.5
-
-
-
-
-
-
-16.5
-16.2
-16.3
-16.0
V/mV
V
V
V
V
V
V
V
V
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ISL70219ASEH
Electrical Specifications ±18.0V VS = ±18.0V, VCM = VO = 0V, RL = Open, TA= +25°C, unless otherwise noted. Boldface limits apply
across the operating temperature range, -55°C to +125°C; over a total ionizing dose of 300krad(Si) with exposure at a high dose rate of 50ad(Si)/s to
300rad(Si)/s or over a total ionizing dose of 50krad(Si) with exposure at a low dose rate of <10mrad(Si)/s, unless otherwise noted. (Continued)
PARAMETER
DESCRIPTION
TEST CONDITIONS
MIN MAX
(Note 6) TYP (Note 6)
UNIT
IS Supply Current/Amplifier
-
0.490
0.725
mA
- - 0.85 mA
ISC Output Short-Circuit Current
Sourcing: VIN = 0V, VOUT = -16V
-
41
-
(Note 7)
mA
Sinking: VIN = 0V, VOUT = +16V - -42 -
(Note 7)
mA
VSUPPLY
Supply Voltage Range
AC SPECIFICATIONS
Guaranteed by PSRR
±2.25
-
±20
V
GBWP
Gain Bandwidth Product
enVp-p
Voltage Noise VP-P
en Voltage Noise Density
en Voltage Noise Density
en Voltage Noise Density
en Voltage Noise Density
in Current Noise Density
TRANSIENT RESPONSE
AV = 1k, RL = 2kΩ (Note 7)
0.1Hz to 10Hz (Note 7)
f = 10Hz (Note 7)
f = 100Hz (Note 7)
f = 1kHz (Note 7)
f = 10kHz (Note 7)
f = 1kHz (Note 7)
- 1.5 -
MHz
- 0.25 -
µVP-P
- 10 - nV/Hz
- 8.2 - nV/Hz
- 8 - nV/Hz
- 8 - nV/Hz
- 0.1 - pA/Hz
SR Slew Rate, VOUT 20% to 80%
AV = 1, RL = 2kΩVO = 4VP-P
0.3 0.5
0.2 -
-
-
V/µs
V/µs
tr, tf, Rise Time
Small Signal 10% to 90% of VOUT
AV = 1, VOUT = 50mVP-P,
RL = 10kΩto VCM
- 130 450
- - 625
ns
ns
Fall Time
90% to 10% of VOUT
AV = 1, VOUT = 50mVP-P, RL = 10kΩ
to VCM
-
-
130 600
- 700
ns
ns
ts Settling Time to 0.1%
10V Step; 10% to VOUT
AV = -1, VOUT = 10VP-P, RL = 5kΩ to
VCM (Note 7)
-
Settling Time to 0.01%
10V Step; 10% to VOUT
AV = -1, VOUT = 10VP-P, RL = 5kΩ to
VCM (Note 7)
-
Settling Time to 0.1%
4V Step; 10% to VOUT
AV = -1, VOUT = 4VP-P, RL = 5kΩ to
VCM (Note 7)
-
Settling Time to 0.01%
4V Step; 10% to VOUT
AV = -1, VOUT = 4VP-P, RL = 5kΩ to
VCM (Note 7)
-
tOL
Output Positive Overload Recovery
AV = -100, VIN = 0.2VP-P, RL = 2kΩ to
-
Time
VCM (Note 7)
Output Negative Overload Recovery
Time
AV = -100, VIN = 0.2VP-P, RL = 2kΩ to
VCM (Note 7)
-
OS+ Positive Overshoot
AV = 1, VOUT = 10VP-P, Rf = 0Ω
RL = 2kΩto VCM
-
-
21
24
13
18
5.6
10.6
15
-
-
-
-
-
-
-
-
33
µs
µs
µs
µs
µs
µs
%
%
OS- Negative Overshoot
AV = 1, VOUT = 10VP-P, Rf = 0Ω
RL = 2kΩto VCM
- 15 -
- - 33
%
%
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