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Si7540ADP
Vishay Siliconix
N- and P-Channel 20 V (D-S) MOSFET
PowerPAK® SO-8 Dual
D1
D1 8
D2 7
D2 6
5
6.15 mm
1
Top View
5.15 mm
1
2 S1
3 G1
4 S2
G2
Bottom View
PRODUCT SUMMARY
N-CHANNEL P-CHANNEL
VDS (V)
RDS(on) () at VGS = ± 4.5 V
RDS(on) () at VGS = ± 2.5 V
Qg typ. (nC)
ID (A) a, b
Configuration
20 -20
0.0150
0.0280
0.0195
0.0430
8.5 16
12 9
N- and p-pair
FEATURES
• TrenchFET® power MOSFETs
• Thermally enhanced PowerPAK®
• 100 % Rg tested
• Material categorization:
for definitions of compliance please see
www.vishay.com/doc?99912
APPLICATIONS
• DC/DC converters
• Synchronous buck converter
• Synchronous rectifier
• Load switch
• Motor drive switch
G1
D1
G2
S2
S1
N-Channel MOSFET
D2
P-Channel MOSFET
ORDERING INFORMATION
Package
Lead (Pb)-free and halogen-free
PowerPAK SO-8
Si7540ADP-T1-GE3
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted)
PARAMETER
SYMBOL
N-CHANNEL
10 s STEADY
P-CHANNEL
10 s STEADY
Drain-source voltage
Gate-source voltage
Continuous drain current (TJ = 150 °C) a, b
Pulsed drain current
TA = 25 °C
TA = 70 °C
Continuous source current (diode conduction) b
Maximum power dissipation b
TA = 25 °C
TA = 70 °C
Operating junction and storage temperature range
Soldering recommendations (peak temperature) d, e
VDS
VGS
ID
IDM
IS
PD
TJ, Tstg
20 -20
± 12
12 8 -9 -6.1
9.8 6.5 -7.3 -4.9
35 -25
2.9 1.3 -2.9 -1.3
3.5 1.6 3.5 1.6
2.3 1 2.3 1
-55 to +150
260
UNIT
V
A
W
°C
THERMAL RESISTANCE RATINGS
PARAMETER
SYMBOL
N-CHANNEL
TYP. MAX.
P-CHANNEL
TYP. MAX.
UNIT
Maximum junction-to-ambient b, f
Maximum junction-to-case (drain)
t 10 s
Steady state
RthJA
RthJC
25 35 25 35
4.6 6 4.8 6.3
°C/W
Notes
a. Based on silicon capability only.
b. Surface mounted on 1" x 1" FR4 board.
c. t = 10 s.
d. See solder profile (www.vishay.com/doc?73257). The PowerPAK SO-8 is a leadless package. The end of the lead terminal is exposed copper
(not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and is not
required to ensure adequate bottom side solder interconnection.
e. Rework conditions: Manual soldering with a soldering iron is not recommended for leadless components.
f. Maximum under steady state conditions is 80 °C/W.
S16-2274-Rev. C, 14-Nov-16
1
Document Number: 62951
For technical questions, contact: pmostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

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Si7540ADP
Vishay Siliconix
SPECIFICATIONS (TJ = 25 °C, unless otherwise noted)
PARAMETER
SYMBOL
TEST CONDITIONS
Static
Drain-source breakdown voltage
VDS temperature coefficient
VGS(th) temperature coefficient
Gate threshold voltage
VDS
VDS/TJ
VGS(th)/TJ
VGS(th)
VGS = 0 V, ID = 250 μA
VGS = 0 V, ID = -250 μA
ID = 250 μA
ID = -250 μA
ID = 250 μA
ID = -250 μA
VDS = VGS, ID = 250 μA
VDS = VGS, ID = -250 μA
Gate-body leakage
IGSS VDS = 0 V, VGS = ± 12 V
Zero gate voltage drain current
On-state drain current b
Drain-source on-state resistance b
Forward transconductance b
Dynamic a
IDSS
ID(on)
RDS(on)
gfs
VDS = 20 V, VGS = 0 V
VDS = -20 V, VGS = 0 V
VDS = 20 V, VGS = 0 V, TJ = 55 °C
VDS = -20 V, VGS = 0 V, TJ = 55 °C
VDS 5 V, VGS = 4.5 V
VDS -5 V, VGS = -4.5 V
VGS = 4.5 V, ID = 12 A
VGS = -4.5 V, ID = -9 A
VGS = 2.5 V, ID = 9 A
VGS = -2.5 V, ID = -6 A
VDS = 10 V, ID = 12 A
VDS = -10 V, ID = -9 A
Input capacitance
Output capacitance
Reverse transfer capacitance
Total gate charge
Ciss
Coss
Crss
Qg
N-channel
VDS = 10 V, VGS = 0 V, f = 1 MHz
P-channel
VDS = -10 V, VGS = 0 V, f = 1 MHz
VDS = 10 V, VGS = 10 V, ID = 12 A
VDS = -10 V, VGS = -10 V, ID = -9 A
Gate-source charge
Gate-drain charge
N-channel
VDS = 10 V, VGS = 4.5 V, ID = 12 A
Qgs
P-channel
VDS = -10 V, VGS = -4.5 V, ID = -9 A
Qgd
Gate resistance
Rg f = 1 MHz
MIN. TYP. MAX UNIT
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
20 -
-
V
-20 -
-
- 17 -
- -11 -
mV/°C
- -3.7 -
- 5.5 -
0.6 - 1.4
V
-0.6 - -1.4
- - ± 100
nA
- - ± 100
--1
- - -1
μA
- - 10
- - -10
20 -
-
A
-20 -
-
- 0.0115 0.0150
- 0.0220 0.0280
- 0.0150 0.0195
- 0.0330 0.0430
- 55 -
- 24 -
S
N-Ch - 915 -
P-Ch - 1310 -
N-Ch - 235 -
P-Ch - 310 -
N-Ch - 110 -
P-Ch - 270 -
N-Ch -
18 27
P-Ch -
32 48
N-Ch -
8.5 13
P-Ch -
16 24
N-Ch - 1.8 -
P-Ch - 2.3 -
N-Ch - 2.2 -
P-Ch - 6 -
N-Ch 0.6 3.2 6.4
P-Ch 0.2
1
2
pF
nC
S16-2274-Rev. C, 14-Nov-16
2
Document Number: 62951
For technical questions, contact: pmostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

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Si7540ADP
Vishay Siliconix
SPECIFICATIONS (TJ = 25 °C, unless otherwise noted)
PARAMETER
SYMBOL
TEST CONDITIONS
Dynamic a
Turn-on delay time
Rise time
td(on)
tr
N-channel
VDD = 10 V, RL = 2
ID 5 A, VGEN = 4.5 V, Rg = 1
N-Ch
P-Ch
N-Ch
P-Ch
Turn-off delay time
Fall time
td(off)
tf
P-channel
VDD = -10 V, RL = 2
ID -5 A, VGEN = -4.5 V, Rg = 1
N-Ch
P-Ch
N-Ch
P-Ch
Turn-on delay time
Rise time
td(on)
tr
N-channel
VDD = 10 V, RL = 2
ID 5 A, VGEN = 10 V, Rg = 1
N-Ch
P-Ch
N-Ch
P-Ch
Turn-off delay time
Fall time
td(off)
tf
P-channel
VDD = -10 V, RL = 2
ID -5 A, VGEN = -10 V, Rg = 1
N-Ch
P-Ch
N-Ch
P-Ch
Drain-Source Body Diode Characteristics
Continuous source-drain diode current
IS
TA = 25 °C
N-Ch
P-Ch
Pulse diode forward current (t = 100 μs)
ISM
N-Ch
P-Ch
Body diode voltage
Body diode reverse recovery time
VSD
trr
IS = 2.9 A, VGS = 0 V
IS = -2.9 A, VGS = 0 V
N-Ch
P-Ch
N-Ch
P-Ch
Body diode reverse recovery charge
Qrr
N-channel
N-Ch
IF = 5 A, dI//dt = 100 A/μs, TJ = 25 °C P-Ch
Reverse recovery fall time
P-channel
N-Ch
ta IF = -5 A, dI/dt = -100 A/μs, TJ = 25 °C P-Ch
Reverse recovery rise time
tb
N-Ch
P-Ch
Notes
a. Guaranteed by design, not subject to production testing.
b. Pulse test; pulse width 300 μs, duty cycle 2 %.
MIN.
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
TYP.
12
15
45
50
22
30
12
11
6
10
21
23
20
26
10
10
-
-
-
-
0.8
-0.81
20
30
10
20
8.5
18
11.5
12
MAX
25
30
90
100
45
60
25
20
15
15
40
45
40
50
20
20
2.9
-2.9
35
-25
1.2
-1.2
40
60
20
40
-
-
-
-
UNIT
ns
A
V
ns
nC
ns
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
S16-2274-Rev. C, 14-Nov-16
3
Document Number: 62951
For technical questions, contact: pmostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

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N-CHANNEL TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
Si7540ADP
Vishay Siliconix
35
30
25
20
15
10
5
0
0.0
VGS = 5 V thru 2.5 V
VGS = 2 V
VGS = 1.5 V
0.5 1.0 1.5 2.0 2.5
VDS - Drain-to-Source Voltage (V)
Output Characteristics
3.0
20
16
12
8
TC = 25 °C
4 TC = 125 °C
TC = - 55 °C
0
0.0 0.4 0.8 1.2 1.6 2.0
VGS - Gate-to-Source Voltage (V)
Transfer Characteristics
0.030
0.025
0.020
0.015
VGS = 2.5 V
0.010
0.005
VGS = 4.5 V
0.000
0
5 10 15 20 25 30 35
ID - Drain Current (A)
On-Resistance vs. Drain Current and Gate Voltage
1500
1200
900
Ciss
600
300
0
0
Coss
Crss
4 8 12 16
VDS - Drain-to-Source Voltage (V)
Capacitance
20
10
VDS = 10 V
8 ID = 12 A
VDS = 5 V
6
VDS = 16 V
4
1.6
ID = 12 A
1.4
1.2
1.0
VGS = 4.5 V, 2.5 V
2 0.8
0
0 4 8 12 16 20
Qg - Total Gate Charge (nC)
Gate Charge
0.6
- 50 - 25 0
25 50 75 100 125 150
TJ - Junction Temperature (°C)
On-Resistance vs. Junction Temperature
S16-2274-Rev. C, 14-Nov-16
4
Document Number: 62951
For technical questions, contact: pmostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

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N-CHANNEL TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
Si7540ADP
Vishay Siliconix
100
TJ = 150 °C
10 TJ = 25 °C
1
0.04
0.03
ID = 12 A
0.02
0.01
TJ = 125 °C
TJ = 25 °C
0.1
0.0 0.2 0.4 0.6 0.8 1.0 1.2
VSD - Source-to-Drain Voltage (V)
Source-Drain Diode Forward Voltage
0.00
012345
VGS - Gate-to-Source Voltage (V)
On-Resistance vs. Gate-to-Source Voltage
1.3
1.2
1.1
1.0
0.9
0.8 ID = 250 μA
0.7
0.6
0.5
- 50 - 25
0 25 50 75 100 125 150
TJ - Temperature (°C)
Threshold Voltage
40
30
20
10
0
0.001 0.01
0.1 1
10
Time (s)
100 1000
Single Pulse Power (Junction-to-Ambient)
100 Limited by IDM
Limited by RDS(on)*
Limited by IDon
10
100 μs
1
0.1
TA = 25 °C
1 ms
10 ms
100 ms
1s
10 s
DC
BVDSS Limited
0.01
0.1
1 10
VDS - Drain-to-Source Voltage (V)
* VGS > minimum VGS at which RDS(on) is specified
100
Safe Operating Area, Junction-to-Ambient
S16-2274-Rev. C, 14-Nov-16
5
Document Number: 62951
For technical questions, contact: pmostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000