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IAM-91563
0.8–6 GHz 3V Downconverter
Data Sheet
Description
Avago’s IAM-91563 is an economical 3V GaAs MMIC mixer
used for frequency down-conversion. RF frequency cover-
age is from 0.8 to 6 GHz and IF ­coverage is from 50 to 700
MHz. Packaged in the SOT-363 ­package, this 4.0 sq. mm.
package requires half the board space of a SOT-143 and
only 15% the board space of an SO‑8 package.
At 1.9 GHz, the IAM-91563 ­ provides 9 dB of conversion
gain, thus eliminating an RF or IF gain stage normally
needed with a lossy mixer. LO drive power is nominally
only -5 dBm, eliminating an LO buffer amplifier. The 8.5 dB
noise figure is low enough to allow the system to use a
low cost LNA. The
system linearity for
-m6 odsBt mcomInmpuetrcIiPa3l ­
provides adequate
applications, but is
adjustable to 0 dBm.
The circuit uses GaAs PHEMT technology with proven reli-
ability, and uniformity. The MMIC ­consists of a cascode FET
structure that provides unbalanced gm modulation type
mixing. An on-chip LO buffer amp drives the mixer while
bias circuitry allows a single +3V supply (through a choked
IF port). The LO port is internally matched to 50 Ω. The
RF and IF ports are high impedance and require external
matching networks.
Surface Mount Package: SOT-363 (SC-70)
Pin Connections and Package Marking
MGA-86563 Pkg
LO 1
6 IF and Vd
GND 2
5 GND
RF 3
4 SOURCE
BYPASS
Note:
1. Package marking provides orientation and identification.
Features
Lead-free Option Available
+0 dBm Input IP3 at 1.9 GHz
Single +3V Supply
8.5 dB SSB Noise Figure at 1.9 GHz
9.0 dB Conversion Gain at 1.9 GHz
Ultra-miniature Package
Applications
Downconverter for PCS, PHS, ISM, WLL, and other
Wireless Applications
Attention: Observe precautions for
handling electrostatic ­sensitive devices.
ESD Human Body Model (Class 0)
Refer to Avago Application Note A004R:
Electrostatic Discharge Damage and Control.
Simplified Schematic
LO
1
RF
3
IF and Vd
6
SOURCE
BYPASS
4
GROUND
2, 5


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IAM-91563 Absolute Maximum Ratings
Symbol Parameter
Units
Absolute
Maximum[1]
Vd
VRF, VLO
Pin
Tch
TSTG
Device Voltage, RF output to ground
RF voltage or LO voltage to ground
CW RF Input Power
Channel Temperature
Storage Temperature
V 6.0
V +0.5, -1.0
dBm
+13
°C 150
°C -65 to 150
Thermal Resistance [2]: θch-c = 310°C/W
Notes:
1. Permanent damage may occur if any of
these limits are exceeded.
2. TC = 25°C (TC is defined to be the
temperature at the package pins where
contact is made to the circuit board).
IAM-91563 Electrical Specifications, TC = 25°C, Vd = 3 V
Symbol Parameters and Test Conditions
Units Min. Typ. Max. Std Dev[2]
G test
Gain in test circuit[1]
RF=1890 MHz, IF=250 MHz dB 4.0 9.0
NFtest Noise Figure in test circuit[1]
RF=1890 MHz, IF=250 MHz dB 8.5 11.0
Id Device Current mA 6.0 9.0 12.0
NF Noise Figure (RF & IF with external matching,
f = 0.9 GHz dB 7.0
IF=250 MHz, LO power=-5 dBm)
f = 1.9 GHz 8.5
f = 2.4 GHz 11.0
f = 4.0 GHz 16.5
f = 6.0 GHz 18.0
0.5
Gc Conversion gain (RF and IF with external matching,
IF=250 MHz, LO power=-5 dBm)
f = 0.9 GHz dB 11.0
f = 1.9 GHz 9.0 1.5
f = 2.4 GHz 7.7
f = 4.0 GHz 4.6
f = 6.0 GHz 1.7
P1 dB Output power @ 1 dB compression (RF and IF with
external matching, IF=250 MHz, LO power =-5 dBm)
f = 0.9 GHz dBm
f = 1.9 GHz
f = 2.4 GHz
f = 4.0 GHz
f = 6.0 GHz
-6.7
-8.0 1.3
-8.7
-15.0
-17.8
RLRF RF port return loss
f = 0.5 - 6.0 GHz dB -1.7
0.2
RLLO LO port return loss
f = 0.5 - 6.0 GHz dB -9.4
0.3
RLIF IF port return loss
f = 50 - 700 MHz dB -3.7
0.2
IP3 Input Third Order Intercept Point
RF = 1.9 GHz, IF = 250 MHz dBm -6.0 1.3
Id = 9.0 mA, LO power = -5 dBm
IP3 Input Third Order Intercept Point
RF = 1.9 GHz, IF = 250 MHz dBm
0 1.1
Id = 15 mA, LO power = -2 dBm
ISOLL-R LO-RF Isolation
RF = 1.9 GHz dB 18
ISOLR-I RF-IF Isolation (No Match) dB 2
ISOLR-I LO-IF Isolation (No Match) dB
4
Notes:
1. Guaranteed specifications are 100% tested in the circuit in Figure 18 in the Applications Information section.
2. Standard deviation number is based on measurement of at least 500 parts from three non-consecutive wafer lots during the initial characterization
of this product, and is intended to be used as an estimate for distribution of the typical specification.


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IAM-91563 Typical Performance, TC = 25°C, Vd= 3.0 V, RF=1890 MHz, LO = -5 dBm, IF = 250 MHz, unless otherwise stated.
12
TA = +85 C
10 TA = +25 C
TA = –40 C
8
6
4
2
0
01 2 3 4 5
FREQUENCY (GHz)
Figure 1. Available Conversion Gain vs.
Frequency and Temperature.
6
20
TA = +85 C
18 TA = +25 C
16 TA = –40 C
14
12
10
8
6
01 2 3 4 56
FREQUENCY (GHz)
Figure 2. Noise Figure (into 50 ) vs. Frequency
and Temperature.
-4
-6
-8
-10
-12
-14
-16 TA = +85 C
-18
TA = +25 C
TA = –40 C
-20
01 2 3 4 56
FREQUENCY (GHz)
Figure 3. Output Power (@ 1 dB Compression)
vs. Frequency and Temperature.
12
Vd = 3.3V
10 Vd = 3.0V
Vd = 2.7V
8
6
4
2
0
01 2 3 4 5
FREQUENCY (GHz)
Figure 4. Available Conversion Gain vs.
Frequency and Voltage.
6
20
18
Vd = 3.3V
Vd = 3.0V
16 Vd = 2.7V
14
12
10
8
6
01 2 3 4 5
FREQUENCY (GHz)
Figure 5. Noise Figure (into 50 ) vs.
Frequency and Supply Voltage.
6
-4
-6
-8
-10
-12
-14
-16 Vd = 3.3V
-18
Vd = 3.0V
Vd = 2.7V
-20
01 2 3 4 56
FREQUENCY (GHz)
Figure 6. Output Power (@ 1 dB Compression)
vs. Frequency and Voltage.
0
-1
-2
-3
-4 IF
-5
-6
-7
-8
RF
LO
-9
-10
0
12345
FREQUENCY (GHz)
Figure 7. RF, LO, and IF Return Loss vs.
Frequency.
6
12
10
8
6
4
TA = +85 C
TA = +25 C
2 TA = -40 C
0
0 123 4 5
SUPPLY VOLTAGE (V)
Figure 8. Device Current vs. Supply Voltage and
Temperature.
12
10
8
6 Vd = 3.3V
Vd = 3.0V
4 Vd = 2.7V
2
0 100 200 300 400 500 600 700
IF FREQUENCY (MHz)
Figure 9. SSB Noise Figure vs. Frequency and
Supply Voltage.