SLB80R850SJ.pdf 데이터시트 (총 7 페이지) - 파일 다운로드 SLB80R850SJ 데이타시트 다운로드

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General Description
This Power MOSFET is producFeeadtuurseisng Maple semi‘s
Advanced Super-Junction
This advanced technology
theacsh--nb7Lo.oe6wlAeo,gng5a0ytee0. Vsch,paRerDgcSe(oi(na)ttlyylppy. i=cat0al .5i2lΩo5@nrCeV)dGS
=
10
V
to minimize conduction loss, pr-oHvigihdreugsguedpneesrsior switching
performance, and withstand hig-- F1h0a0set%nswaevitracghlaiynngcpheutlessetedin the
avalanche and commutation m-oImdpero.ved dv/dt capability
These devices are well suited for AC/DC power conversion
SLD80R850SJ,SLU80R850SJ,SLP80R850SJ
SLF80R850SJ, SLB80R850SJ, SLI80R850SJ
800V N-Channel MOSFET
Features
-7A, 800V, RDS(on) typ.= 0.8Ω@VGS = 10 V
- Low gate charge ( typical
- High ruggedness
- Fast switching
- 100% avalanche tested
- Improved dv/dt capability
25nC)
DD
GDS
TO-220
GDS
TO-220F
GDS
DD
D2-PAK
GS
GS
D-PAK
GDS
I2-PAK
I-PAK
G
S
Absolute Maximum Ratings
TC = 25°C unless otherwise noted
Symbol
Parameter
D2-PAK/D-PAK
I2-PAK / I-PAK/ TO-220
VDSS
Drain-Source Voltage
800
ID Drain Current
- Continuous (TC = 25)
- Continuous (TC = 100)
7.0
4.2
IDM Drain Current - Pulsed
(Note 1)
13
VGSS Gate-Source Voltage
±30
EAS
Single Pulsed Avalanche Energy
(Note 2)
86
IAR Avalanche Current
(Note 1)
1.7
EAR
Repetitive Avalanche Energ
(Note 1)
0.2
dv/dt
Peak Diode Recovery dv/dt
(Note 3)
15
PD Power Dissipation (TC = 25)
- Derate above 25
63
0.5
TJ, TSTG Operating and Storage Temperature Range
-55 to +150
TL Maximum lead temperature for soldering purposes,
1/8" from case for 5 seconds
300
*Drain current limited by maximum junction temperature.
TO-220F
7.0*
4.2*
13*
30
0.24
Units
V
A
A
A
V
mJ
A
mJ
V/ns
W
W/
Thermal Characteristics
Symbol
Parameter
RθJC
RθJS
RθJA
Thermal Resistance, Junction-to-Case
Thermal Resistance, Case-to-Sink Typ.
Thermal Resistance, Junction-to-Ambient
DPAK
1.9
-
100
IPAK
1.9
-
100
Value
TO220 D2PAK
1.9 1.9
0.5 0.5
62 62
I2PAK
1.9
0.5
62
TO220F
4.2
-
80
Units
/W
/W
/W
Maple Semiconductor CO.,LTD
http://www.maplesemi.com
Rev 1.0 September 2015
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Electrical Characteristics ( TC = 25 °C unless otherwise noted )
Symbol
Parameter
Test Conditions
Off Characteristics
BVDSS Drain-Source Breakdown Voltage
VGS = 0V,ID = 250uA, TJ=25
VGS = 0V,ID = 250uA, TJ=150
ΔBVDSS
ΔTJ
Breakdown Voltage Temperature
coefficient
ID = 250uA, referenced to 25°C
IDSS
Drain-Source Leakage Current
VDS =800V, VGS = 0V
VDS =640V, TC = 125 °C
IGSS
Gate-Source Leakage, Forward
Gate-source Leakage, Reverse
VGS = 30V, VDS = 0V
VGS = -30V, VDS = 0V
On Characteristics
VGS(th) Gate Threshold Voltage
VDS = VGS, ID = 250uA
RDS(ON) Static Drain-Source On-state
Resistance
Dynamic Characteristics
VGS =10 V, ID = 3.5A
Ciss Input Capacitance
Coss Output Capacitance
VGS =0 V, VDS =25V, f = 1MHz
Crss Reverse Transfer Capacitance
Dynamic Characteristics
td(on)
Turn-on Delay Time
tr
td(off)
Rise Time
Turn-off Delay Time
VDD =400V, ID =7.0A, RG =25
tf Fall Time
Qg Total Gate Charge
Qgs Gate-Source Charge
VDS =640V, VGS =10V, ID =7.0A
Qgd Gate-Drain Charge(Miller Charge)
Source-Drain Diode Ratings and Characteristics
Symbol
IS
ISM
VSD
trr
Qrr
Parameter
Test Conditions
Maximum Continuous Drain-Source Diode Forward Current
Maximum Pulsed Drain-Source Diode Forward Current
Diode Forward Voltage
IS =7.0A, VGS =0V
Reverse Recovery Time
Reverse Recovery Charge
IS =7.0A, VGS=0V, dIF/dt=100A/us
NOTES
1. Repeativity rating : pulse width limited by junction temperature
2. L =60mH, IAS =1.7A, VDD = 150V, RG = 25, Starting TJ = 25°C
3. ISD 7A, di/dt 200A/us, VDD BVDSS, Starting TJ = 25°C
4. Pulse Test : Pulse Width 300us, Duty Cycle 2%
5. Essentially independent of operating temperature.
Min Typ Max Units
800 -
- 850
-
-
V
V
- 0.6 - V/°C
- - 1 uA
- 10 - uA
- - 100 nA
-
-
-100
nA
2.5 3.5 4.5 V
-
0.8 0.85
- 380 -
- 110 -
-7-
pF
` 13 -
- 10 -
nS
- 85 -
- 14 -
- 25 -
- 2.0 - nC
- 2.7 -
Min.
-
-
-
-
-
Typ.
-
-
-
190
2.3
Max.
7.0
13
1.5
-
-
Unit.
A
V
nS
uC
Maple Semiconductor CO.,LTD
http://www.maplesemi.com
Rev 1.0 September 2015
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VDS (V)
Figure 1: On-Region Characteristics@25°C
Drain-source voltage VDS (V)
Figure 2: On-Region Characteristics@125°C
Figure 3:Power Dissipation(TO-220,TO-252)
Figure 4: On-Resistance vs. Drain Current
Temperature (°C)
Figure 5: On-Resistance vs. Junction Temperature
Figure 6: Break Down vs. Junction Temperature
Maple Semiconductor CO.,LTD
http://www.maplesemi.com
Rev 1.0 September 2015
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VSD (V)
Figure 7: Body-Diode Characteristics
Qg (nC)
Figure 8: Gate-Charge Characteristics
VDS (V)
Figure 9: Capacitance Characteristics
VDS (V)
Figure 10: Coss stored Energy
Figure 11: Maximum Forward Biased Safe Operating Area
TCASE (°C)
Figure 12: Avalanche energy
Maple Semiconductor CO.,LTD
http://www.maplesemi.com
Rev 1.0 September 2015
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Maple Semiconductor CO.,LTD
http://www.maplesemi.com
Rev 1.0 September 2015
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