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BYD Microelectronics Co., Ltd.
BF98N60/BF98N60L
600V N-Channel MOSFET
General Description
These N-Channel enhancement mode power field effect
transistors are produced using DMOS technology.
This advanced technology has been especially tailored to
minimize on-state resistance, provide superior switching
performance, and withstand high energy pulse in the avalanche
and commutation mode. These devices are well suited for high
efficiency switched mode power supplies, active power factor
correction, electronic lamp ballasts based on half bridge topology.
Features
z VDS =600 V
z ID =8A
z RDS(ON) =1.0 TYP(VGS=10V ID=4.0A)
z Low CRSS (typical 11pF)
z Fast switching
Absolute Maximum Ratings
Symbol Parameter
VDS Drain-Source Voltage
ID Drain Current(continuous)at Tc=25°C
IDM Drain Current (pulsed)
(Note1)
VGS Gate-Source Voltage
EAS SinglePulseAvalanche Energy
(Note2)
IAR Avalanche Current
(Note1)
EAR RepetitiveAvalancheEnergy
(Note1)
dv/dt
PeakDiodeRecoverydv/dt
(Note3)
PD Power Dissipation (TC = 25°C)
Tstg Storage Temperature Range
TL Maximum Lead Temperature for Soldering Purpose
BF98N60L
BF98N60
600
8
32
±30
240
8
13.9 4.5
5.0
139 45
-55 to +150
300
Unit
V
A
A
V
mJ
A
mJ
V/ns
W
°C
°C
Datasheet
TS-MOS-PD-0013 Rev.A/4
Page 1 of 11

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BYD Microelectronics Co., Ltd.
Ordering Information
Part Number
BF98N60
BF98N60L
Package
TO-220F
TO-220
BF98N60/BF98N60L
Packaging
Tube
Tube
Thermal Data
Symbol Parameter
Rthj-case
Rthj-amb
Thermal Resistance Junction-case
Thermal Resistance Junction-ambient
TO-220F
2.7
62.5
TO-220
0.9
62.5
Unit
°C /W
°C /W
Electrical Characteristics(Tc = 25)
Symbol Parameter
Test Conditions
V(BR)DSS Drain-source Breakdown Voltage
IDSS
Zero Gate Voltage
Drain Current
IGSS
Gate-body Leakage
Current
ID=250uA ,VGS=0V
VDS=600V, VGS=0V
VDS=600V, VGS=0V, Tc=125
VGS=±30V ,VDS=0V
VGS(th)
RDS(on)
Ciss
Coss
Crss
Gate Threshold Voltage
Static Drain-source On Resistance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
VDS=VGS ,ID=250uA
VGS=10V ,ID=4.0A
VDS=25V,f=1MHZ,VGS=0V
td(on)
Turn-on Delay Time
tr
td(off)
Rise Time
Turn-off Delay Time
VDD=300V ,ID=4A
VGS=10V, RG=4.7Ω (Note4,5)
tf
Qg
Qgs
Qgd
VSD(*)
Trr
Fall Time
Total Gate Charge
Gate-source Charge
Gate-Drain Charge
Forward On Voltage
Reverse Recovery Time
VDD=480V,ID=8A
VGS=10V
(Note4,5)
IF=8A, VGS=0V
VDD=300V,IF=8A,di/dt=100A/us
(Note4)
Min.
600
2.0
Typ.
1.0
1200
101
11
24
21
50
18
30.2
10
11.6
0.84
400
Notes:
1. Repetitive Rating : Pulse width limited by maximum junction temperature
2. L = 7mH, IAS = 8 A, VDD = 50V, RG = 25 , Starting TJ = 25°C
3. ISD 8A, di/dt 200A/μs, VDD BVDSS, Starting TJ = 25°C
4. Pulse Test : Pulse width 300μs, Duty cycle 2%
5. Essentially independent of operating temperature
(*)Pulsed:Pulse duration
Max.
10
100
±100
4.0
1.4
1.2
Unit
V
uA
uA
nA
V
pF
pF
pF
ns
ns
ns
ns
nC
nC
nC
V
ns
Datasheet
TS-MOS-PD-0013 Rev.A/4
Page 2 of 11

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BYD Microelectronics Co., Ltd.
BF98N60/BF98N60L
Typical characteristics (25unless noted)
Figure 1 Output Characteristics
ID1(A5)
12
9
6
V GS
Top : 10V
8V
7V
6V
5V
Bottom : 4V
Figure 2 Transfer Characteristics
ID(1A5)
12
9
6 VDS=25V
33
0
0 5 10 15 20 VDS(2V5)
Figure 3 Normalized Threshold Voltage
vs. Temperature
1V.t2h
1.1
1.0
V DS =V GS
ID=250uA
0.9
0
0 2 4 6 8 VGS(1V0)
Figure 4 Normalized BVDSS vs.Temperature
BV1.D3SS
1.2
1.1 VGS=0 V
ID=250uA
1.0
0.8 0.9
0.7
-75 -25 25 75 125 Tj(175)
Figure 5 Normalized on Resistance
vs Temperature
R2DS.7(o5n)
2.25
1.75
1.25
0.75
VGS=10V
ID=4A
0.25
-75
-25
25
75 125 Tj1(75)
0.8
-75
-25
25
75 125 Tj1(75)
Figure 6 Source-Drain Diode Forward
Characteristic
VSD (V1)
0.9
0.8
0.7
0.6
0.5
0 2 4 6 8 ISD1(A0)
Datasheet
TS-MOS-PD-0013 Rev.A/4
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BYD Microelectronics Co., Ltd.
Figure 7 Capacitance
1C00(p0F0)
1000
Ciss
100
10
0
Coss
f=1M Hz
Crss VGS=0V
10 20 30 40 VDS(5V0)
Figure 9-1 Safe Operating Area
For BF98N60
I1D0(A0 )
Operation in This Areais
Limited by R DS(on)
10
10us
100us
1ms
10ms
1 DC
0.1
0.01
1
Notes:
1. TC = 25
2. TJ = 150
3. Single Pulse
10 100
VD1S0(0V0)
Figure 10 Maximum Drain Current
vs Case Temperature
ID(A5)
4
3
2
1
0
25 50 75 100 125 TC1(50)
BF98N60/BF98N60L
Figure 8 Gate Charge
V GS1(V0 )
8
6
VDS=480V
ID=8A
4
2
0
0 7 14 21 28 Qg(n3C5)
Figure 9-2 Safe Operating Area
For BF98N60L
I1D0(A0)
10
Operation in This
Areais Limited by R
10us
100us
1ms
10ms
1
DC 100ms
0.1
0.01
1
Notes:
1. TC = 25
2. TJ = 150
3. Single Pulse
10 100
V1DS0(0V0)
Datasheet
TS-MOS-PD-0013 Rev.A/4
Page 4 of 11

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BYD Microelectronics Co., Ltd.
BF98N60/BF98N60L
Figure 11-1 Maximum Transient Thermal Impedance For BF98N60
10
D=0.50
1
0.20
0.10
0.05
0.1
0.02
0.01
0.01
0.00001
0.0001
SINGLE PULSE
(THERMAL RESPONSE)
Notes:
1. Duty factor D = t1 / t2
2. Peak TJ = PDM x ZthJC + Tc
0.001
0.01
0.1
t1, Square Wave Pulse Duration [sec]
1
Figure 11-2 Maximum Transient Thermal Impedance For BF98N60L
1
D=0.50
0.20
0.1 0.10
0.05
0.02
0.01
0.01
0.00001
SINGLE PULSE
(THERMAL RESPONSE)
Notes:
1. Duty factor D = t1 / t2
2. Peak TJ = PDM x ZthJC + Tc
0.0001
0.001
0.01
0.1
t1, Square Wave Pulse Duration [sec]
1
10
10
Datasheet
TS-MOS-PD-0013 Rev.A/4
Page 5 of 11