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BYD Microelectronics Co., Ltd.
BF95N50T/BF95N50L
500V N-Channel MOSFET
General Description
These N-Channel enhancement mode power field effect
transistors are produced using VDMOS technology.
This advanced technology has been especially tailored to
minimize on-state resistance, provide superior switching
performance, and withstand high energy pulse in the avalanche
and commutation mode. These devices are well suited for high
efficiency switched mode power supplies, active power factor
correction, electronic lamp ballasts based on half bridge
topology.
Features
z VDS =500 V
z ID=5A
z RDS(ON)1.60TYP(VGS=10V,ID=2.5A)
z Low CRSS (typical 7.8 pF)
z Fast switching
Absolute Maximum Ratings
Symbol Parameter
VDS Drain-Source Voltage
ID Drain Current(continuous)at Tc=25°C
IDM Drain Current (pulsed)
VGS Gate-Source Voltage
IAR Avalanche Current
EAS Single Pulse Avalanche Energy
EAR Repetitive Avalanche Energy
dv/dt
Peak Diode Recovery dv/dt
PD Power Dissipation (TC = 25°C)
Tstg Storage Temperature Range
TL Maximum Lead Temperature for Soldering Purpose
(Note1)
(Note1)
(Note2)
(Note1)
(Note3)
BF95N50T BF95N50L
500
5
20
±30
5
220
6.9
5.0
69
-55 to +150
300
Unit
V
A
A
V
A
mJ
mJ
V/ns
W
°C
°C
Datasheet
TS-MOS-PD-0063Rev.A/3
Page 1 of 8

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BYD Microelectronics Co., Ltd.
Ordering Information
Part Number
BF95N50T
BF95N50L
Package
TO-252
TO-220
BF95N50T/ BF95N50L
Packaging
Tape&Reel
Tube
Thermal Data
Symbol Parameter
Rthj-case Thermal Resistance Junction- case
Rthj-amb Thermal Resistance Junction-ambient
BF95N50T
BF95/N50L
1.8
62.5
Unit
°C /W
°C /W
Electrical Characteristics(Tc = 25)
Symbol Parameter
Test Conditions
V(BR)DSS Drain-Source Breakdown Voltage
IDSS
Zero Gate Voltage
Drain Current
IGSS
Gate-Body Leakage
Current
ID=250uA ,VGS=0V
VDS=500V ,VGS=0V
VDS=500V,VGS=0V,Tc=125
VGS=±30V, VDS=0V
VGS(th)
RDS(on)
Ciss
Coss
Crss
Gate Threshold Voltage
Static Drain-Source On Resistance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
VDS=VGS, ID=250uA
VGS=10V,ID =2.5A
VDS=25V,f=1MHZ,VGS=0V
td(on)
Turn-On Delay Time
tr
td(off)
Rise Time
Turn-Off Delay Time
VDD=250V, ID=2.5A
VGS=10V, RG=4.7Ω (Note4,5)
tf
Qg
Qgs
Qgd
VSD(*)
Trr
Fall Time
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Forward On Voltage
Reverse Recovery Time
VDD=400V, ID=5A
VGS=10V
(Note4,5)
IF=5A ,VGS=0V
IF=5A, di/dt=100A/us
(Note4)
Min.
500
2.0
Typ.
580
75
7.8
26
20
45
22
20
5
8
350
Max.
10
100
Unit
V
uA
uA
±100 nA
4.0 V
1.6
pF
pF
pF
ns
ns
ns
ns
nC
nC
nC
1.2 V
ns
Notes:
1. Repetitive Rating : Pulse width limited by maximum junction temperature
2. L = 20mH, IAS = 4.5 A, VDD = 50V, RG = 25 , Starting TJ = 25°C
3. ISD 4.5A, di/dt 200A/μs, VDD BVDSS, Starting TJ Tjmax
4. Pulse Test : Pulse width 300μs, duty cycle 1.5%
5. Essentially independent of operating temperature
(*)Pulsed:Pulse duration
Datasheet
TS-MOS-PD-0063Rev.A/3
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BYD Microelectronics Co., Ltd.
BF95N50T/ BF95N50L
Typical characteristics (25unless noted)
Figure 1 Output Characteristics
Figure 2 Transfer Characteristics
ID1(0A)
8
6
VGS
TOP: 10V
8V
7V
6V
5V
Bottem : 4V
4
ID1(A0)
8
6
4
VDS=25V
22
0
0
5 10 15 20 VD2S5(V)
0
0 2 4 6 8 VGS1(V0)
Figure 3 Normalized Threshold Voltage vs.
Temperature
1V.4th
1.2
1.0
0.8
VDS=VGS
ID=250uA
0.6
0.4
-75 -25 25
75 125 T1j(75)
Figure 5 Normalized on Resistance
vs Temperature
RD2S.(4on)
2.0
1.6
VGS=10V
ID=2.5A
1.2
0.8
0.4
-75 -25 25 75 125 Tj(17)5
Figure 4 Normalized BVDSS vs.Temperature
BV1D.2S5S
1.15
1.05
0.95
0.85
VGS=0V
ID=250uA
0.75
-75 -25 25 75 125 Tj1(75)
Figure 6 Source-Drain Diode Forward
Characteristics
VSD1(.V0 )
0.9
0.8
0.7
0.6
0.5
0 2 4 6 8 ISD1(0A)
Datasheet
TS-MOS-PD-0063Rev.A/3
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BYD Microelectronics Co., Ltd.
BF95N50T/ BF95N50L
Figure 7 Capacitance
1C00(0p0F)
1000
Ciss
100
10
1
0
Coss
Crss
f=1MHz
VGS=0V
10 20 30 40 VDS(5V0)
Figure 9 Maximum Safe Operating Area
For BF95N50T / BF95N50L
Figure 8 Gate Charge
VGS1(V0)
8
VDS=400V
6 ID=5A
4
2
0
0 4 8 12 16 Qg(n2C0)
Figure 10 Maximum Drain Current
vs Case Temperature
ID (A)
10
OLipmOLeiipmtreeaidtrteiaobdtniyobinRny iRTDnShTD(ioSsh(nioAs)nrAe) raeisais
10us
100us
1
0.1
0.01
Notes:
1. TC = 25
2. TJ = 150
3. Single Pulse
1 10
1ms
10ms
DC
100 VD1S0(V00)
ID(A5)
4
3
2
1
0
25 50 75 100 125 TC1(50)
Figure 11 Maximum Transient Thermal Impedance For BF95N50T / BF95N50L
10
1 D=0.50
0.20
0.10
0.1 0.05
0.02
0.01
0.01
1E-05
SINGLE PULSE
(THERMAL RESPONSE)
Notes:
1. Duty factor D = t1 / t2
2. Peak TJ = PDM x ZthJC + Tc
0.0001
0.001
0.01
t1, Square Wave Pulse Duration [sec]
0.1
1
Datasheet
TS-MOS-PD-0063Rev.A/3
Page 4 of 8

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BYD Microelectronics Co., Ltd.
Package Drawing
TO-252
E
b2
A
c
BF95N50T/ BF95N50L
E1
A1
b1
e
b
Q
L2
Symbol
A
A1
b
b1
b2
c
D
D1
E
E1
e
H
L
L1
L2
L3
L4
L5
Q
Dimensions In Millimeters
Min
Nom
Max
2.22 2.32 2.42
- - 0.125
0.55 0.61 0.67
0.76 0.86 0.96
5.20 5.30 5.40
0.45 0.50 0.55
5.95 6.10 6.25
4.20 4.35 4.50
6.40 6.55 6.70
4.75 4.80 4.85
2.28REF
9.44 9.79 10.14
1.37 1.52 1.67
2.75REF
0.50REF
0.90 0.95 1.00
0.65 0.80 0.95
1.14 1.33 1.52
0° - 6°
Min
0.087
-
0.022
0.030
0.205
0.018
0.234
0.165
0.252
0.187
0.372
0.054
0.035
0.026
0.045
Dimensions In Inches
Nom
0.091
-
0.024
0.034
0.209
0.020
0.240
0.171
0.258
0.189
0.09REF
0.385
0.060
0.108REF
0.020REF
0.037
0.031
0.052
-
Max
0.095
0.005
0.026
0.038
0.213
0.022
0.246
0.177
0.264
0.191
0.399
0.066
0.039
0.037
0.060
Datasheet
TS-MOS-PD-0063Rev.A/3
Page 5 of 8