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SSM9974GP,S
N-channel Enhancement-mode Power MOSFET
PRODUCT SUMMARY
BVDSS
R DS(ON)
ID
60V
12m
72A
Pb-free; RoHS-compliant TO-220
and TO-263 (D2PAK)
G
D
S
TO-220 (suffix P)
GD
S
TO-263 (suffix S)
DESCRIPTION
The SSM9974 acheives fast switching performance
with low gate charge without a complex drive circuit. It is
suitable for low voltage applications such as DC/DC
converters and general load-switching circuits.
The SSM9974GS is in a TO-263 package, which is
widely used for commercial and industrial surface-mount
applications.
The through-hole version, the SSM9974GP in TO-220,
is available for vertical mounting, where a small footprint
is required on the board, and/or an external heatsink is
to be attached.
These devices are manufactured with an advanced process,
providing improved on-resistance and switching performance.
ABSOLUTE MAXIMUM RATINGS
Symbol
VDS
VGS
ID
IDM
PD
Parameter
Drain-source voltage
Gate-source voltage
Continuous drain current, TC = 25°C
Pulsed drain current1
TC = 100°C
Total power dissipation, TC = 25°C
Linear derating factor
TSTG
TJ
Storage temperature range
Operating junction temperature range
THERMAL CHARACTERISTICS
Symbol
RΘJC
RΘJA
Parameter
Maximum thermal resistance, junction-case
Maximum thermal resistance, junction-ambient
Notes:
1.Pulse width must be limited to avoid exceeding the safe operating area.
2.Pulse width <300us, duty cycle <2%.
Value
60
±20
72
46
300
104
0.8
-55 to 150
-55 to 150
Units
V
V
A
A
A
W
W/°C
°C
°C
Value
1.2
62
Units
°C/W
°C/W
5/12/2006 Rev.3.1
www.SiliconStandard.com
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SSM9974GP,S
ELECTRICAL CHARACTERISTICS (at Tj = 25°C, unless otherwise specified)
Symbol
BVDSS
BV DSS/Tj
RDS(ON)
VGS(th)
gfs
IDSS
IGSS
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
Ciss
Coss
Crss
Rg
Parameter
Test Conditions
Min. Typ. Max. Units
Drain-source breakdown voltage
Breakdown voltage temperature coefficient
Static drain-source on-resistance
Gate threshold voltage
Forward transconductance
Drain-source leakage current
Gate-source leakage current
Total gate charge 2
Gate-source charge
Gate-drain ("Miller") charge
Turn-on delay time 2
Rise time
Turn-off delay time
Fall time
Input capacitance
Output capacitance
Reverse transfer capacitance
VGS=0V, ID=250uA
Reference to 25°C, ID=1mA
VGS=10V, ID=45A
VGS=4.5V, ID=30A
VDS=VGS, ID=250uA
VDS=10V, ID=30A
VDS=60V, VGS=0V
VDS=48V ,VGS=0V, Tj = 150°C
VGS=±20V
ID=30A
VDS=48V
VGS=4.5V
VDS=30V
ID=30A
RG=3.3, VGS=10V
RD=1
VGS=0V
VDS=25V
f=1.0MHz
60 -
-V
- 0.07 - V/°C
- - 12 m
- - 15 m
1 - 3V
- 50 - S
- - 10 uA
- - 100 uA
- - ±100 nA
- 43 69 nC
- 8 - nC
- 31 - nC
- 14 - ns
- 48 - ns
- 42 - ns
- 67 - ns
- 3180 5100 pF
- 495 - pF
- 460 - pF
Gate Resistance
f=1.0MHz
- 1 1.5
Source-Drain Diode
Symbol
VSD
trr
Qrr
Parameter
Forward voltage 2
Reverse-recovery time
Reverse-recovery charge
Test Conditions
IS=45A, VGS=0V
IS=30A, VGS=0V,
dI/dt=100A/µs
Min. Typ. Max. Units
- - 1.2 V
- 45 - ns
- 40 - nC
Notes:
1.Pulse width must be limited to avoid exceeding the maximum junction temperature of 150°C.
2.Pulse width <300us, duty cycle <2%.
5/12/2006 Rev.3.1
www.SiliconStandard.com
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250
T C =25 o C
200
10V
7.0V
150
5.0V
100 4.5V
50
V G =3.0V
0
02468
V DS , Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
20
I D = 30 A
T C =25 o C
16
12
8
2 4 6 8 10
V GS , Gate-to-Source Voltage (V)
Fig 3. On-Resistance vs. Gate Voltage
30
SSM9974GP,S
125
10V
100
T C = 150 o C
7.0V
5.0V
4.5V
75
50
25 V G =3.0V
0
02468
V DS , Drain-to-Source Voltage (V)
Fig 2. Typical Output Characteristics
2.0
I D =45A
V G =10V
1.6
1.2
0.8
0.4
-50
0 50 100
T j , Junction Temperature ( o C)
150
Fig 4. Normalized On-Resistance
vs. Junction Temperature
1.8
20
T j =150 o C
10
T j =25 o C
1.2
0.6
0
0 0.2 0.4 0.6 0.8 1
V SD , Source-to-Drain Voltage (V)
Fig 5. Forward Characteristic of
Reverse Diode
1.2
0.0
-50 0 50 100 150
T j , Junction Temperature ( o C)
Fig 6. Gate Threshold Voltage vs.
Junction Temperature
5/12/2006 Rev.3.1
www.SiliconStandard.com
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