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SSM90T03GP,S
N-channel Enhancement-mode Power MOSFET
Low gate-charge
Simple drive requirement
D
Fast switching
G
Pb-free, RoHS compliant.
S
DESCRIPTION
BVDSS
RDS(ON)
ID
The SSM90T03GS is in a TO-263 package, which is widely used for
commercial and industrial surface mount applications. This device is
suitable for low voltage applications such as DC/DC converters.
The through-hole version, the SSM90T03GP in TO-220, is available for
vertical-mounting, where a small footprint is required on the board, and/or
an external heatsink is to be attached.
GD S
ABSOLUTE MAXIMUM RATINGS
G
D
S
30V
4m
75A
TO-263 (S)
TO-220 (P)
Symbol
VDS
VGS
ID @ Tc=25°C
ID @ Tc=100°C
IDM
PD @ Tc=25°C
EAS
TSTG
TJ
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current, VGS = 4.5V
Continuous Drain Current, VGS = 4.5V
Pulsed Drain Current1
Total Power Dissipation
Linear Derating Factor
Single Pulse Avalanche Energy3
Storage Temperature Range
Operating Junction Temperature Range
THERMAL DATA
Symbol
RΘJC
RΘJA
Parameter
Maximum Thermal Resistance, Junction-case
Maximum Thermal Resistance, Junction-ambient
Rating
30
±20
75
63
350
96
0.7
29
-55 to 150
-55 to 150
Value
1.3
62
Units
V
V
A
A
A
W
W/°C
mJ
°C
°C
Units
°C/W
°C/W
2/17/2005 Rev.2.3
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SSM90T03GP,S
ELECTRICAL CHARACTERISTICS (at Tj=25°C, unless otherwise specified)
Symbol
BVDSS
∆ ∆BVDSS/ Tj
RDS(ON)
VGS(th)
gfs
IDSS
IGSS
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
Ciss
Coss
Crss
Parameter
Test Conditions
Drain-Source Breakdown Voltage
VGS=0V, ID=1mA
Breakdown Voltage Temperature Coefficient Reference to 25°C, ID=1mA
Static Drain-Source On-Resistance2 VGS=10V, ID=45A
Gate Threshold Voltage
Forward Transconductance
Drain-Source Leakage Current (Tj=25oC)
Drain-Source Leakage Current (Tj=150oC)
Gate-Source Leakage
Total Gate Charge2
Gate-Source Charge
Gate-Drain ("Miller") Charge
Turn-on Delay Time2
Rise Time
Turn-off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
VGS=4.5V, ID=30A
VDS=VGS, ID=250uA
VDS=10V, ID=30A
VDS=30V, VGS=0V
VDS=24V ,VGS=0V
VGS= ±20V
ID=40A
VDS=24V
VGS=4.5V
VDS=15V
ID=30A
RG=3.3, VGS=10V
RD=0.5
VGS=0V
VDS=25V
f=1.0MHz
Source-Drain Diode
Symbol
VSD
trr
Qrr
Parameter
Forward On Voltage2
Reverse Recovery Time2
Reverse Recovery Charge
Test Conditions
IS=45A, VGS=0V
IS=30A, VGS=0V,
dI/dt=100A/µs
Min. Typ. Max. Units
30 -
-V
- 0.02 - V/°C
- - 4 m
- - 6 m
0.8 -
3V
- 55 -
S
- - 1 uA
- - 25 uA
- - ±100 nA
- 60 96 nC
- 8.5 - nC
- 38 - nC
- 14 - ns
- 83 - ns
- 66 - ns
- 120 - ns
- 4090 6540 pF
- 1010 - pF
- 890 - pF
Min. Typ. Max. Units
- - 1.3 V
- 51 - ns
- 63 - nC
Notes:
1.Pulse width limited by safe operating area.
2.Pulse width <300us , duty cycle <2%.
3.VDD=25V, L=100uH, RG=25, IAS=24A.
2/17/2005 Rev.2.3
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200
T C =25°C
160
120
80
10V
7.0V
5.0V
4.5V
V G =3.0V
40
0
0123
V DS , Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
5.0
I D =20A
T C =25°C
4.5
4.0
3.5
2 4 6 8 10
V GS , Gate-to-Source Voltage (V)
12
Fig 3. On-Resistance vs. Gate Voltage
20
SSM90T03GP,S
160
140 T C =150°C
120
100
80
10V
7.0V
5.0V
4.5V
V G =3.0V
60
40
20
0
01234
V DS , Drain-to-Source Voltage (V)
5
Fig 2. Typical Output Characteristics
2.0
1.8 I D = 45A
1.5
1.3
1.0
0.8
0.5
0.3
0.0
-50 0 50 100 150
T j , Junction Temperature (°C)
Fig 4. Normalized On-Resistance
vs. Junction Temperature
2
15
T j =150°C
10
T j =25°C
1.5
1
5 0.5
0
0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1
V SD , Source-to-Drain Voltage (V)
Fig 5. Forward Characteristic of
Reverse Diode
0
-50 25 100
T j , Junction Temperature (°C)
175
Fig 6. Gate Threshold Voltage vs.
Junction Temperature
2/17/2005 Rev.2.3
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14
I D = 40
12
V DS =15V
10 V DS =20V
V DS =24V
8
6
4
2
0
0 20 40 60 80 100 120
Q G , Total Gate Charge (nC)
Fig 7. Gate Charge Characteristics
1000
100
1ms
10 10ms
T c =25 o C
Single
100m
s
1
0.1 1 10
V DS ,Drain-to-Source Voltage (V)
100
Fig 9. Maximum Safe Operating Area
SSM90T03GP,S
f=1.0MHz
10000
C iss
C oss
1000
C rss
100
1 5 9 13 17 21 25 29
V DS ,Drain-to-Source Voltage (V)
Fig 8. Typical Capacitance Characteristics
1
Duty factor=0.5
0.2
0.1
0.1
0.05
0.02
0.01
Single Pulse
PDM
t
T
Duty factor = t/T
Peak Tj = PDM x Rthjc + TC
0.01
0.00001
0.0001
0.001
0.01
0.1
1
10
t , Pulse Width (s)
Fig 10. Effective Transient Thermal Impedance
VDS
90%
10%
VGS
td(on) tr
td(off) tf
VG
4.5V
QGS
QG
QGD
Charge
Q
Fig 11. Switching Time Waveform
Fig 12. Gate Charge Waveform
2/17/2005 Rev.2.3
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SSM90T03GP,S
Information furnished by Silicon Standard Corporation is believed to be accurate and reliable. However, Silicon Standard Corporation makes no
guarantee or warranty, express or implied, as to the reliability, accuracy, timeliness or completeness of such information and assumes no
responsibility for its use, or for infringement of any patent or other intellectual property rights of third parties that may result from its
use. Silicon Standard reserves the right to make changes as it deems necessary to any products described herein for any reason, including
without limitation enhancement in reliability, functionality or design. No license is granted, whether expressly or by implication, in relation to
the use of any products described herein or to the use of any information provided herein, under any patent or other intellectual property rights of
Silicon Standard Corporation or any third parties.
2/17/2005 Rev.2.3
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