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SSM90T03GP,S
N-channel Enhancement-mode Power MOSFET
Low gate-charge
Simple drive requirement
D
Fast switching
G
Pb-free, RoHS compliant.
S
DESCRIPTION
BVDSS
RDS(ON)
ID
The SSM90T03GS is in a TO-263 package, which is widely used for
commercial and industrial surface mount applications. This device is
suitable for low voltage applications such as DC/DC converters.
The through-hole version, the SSM90T03GP in TO-220, is available for
vertical-mounting, where a small footprint is required on the board, and/or
an external heatsink is to be attached.
GD S
ABSOLUTE MAXIMUM RATINGS
G
D
S
30V
4m
75A
TO-263 (S)
TO-220 (P)
Symbol
VDS
VGS
ID @ Tc=25°C
ID @ Tc=100°C
IDM
PD @ Tc=25°C
EAS
TSTG
TJ
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current, VGS = 4.5V
Continuous Drain Current, VGS = 4.5V
Pulsed Drain Current1
Total Power Dissipation
Linear Derating Factor
Single Pulse Avalanche Energy3
Storage Temperature Range
Operating Junction Temperature Range
THERMAL DATA
Symbol
RΘJC
RΘJA
Parameter
Maximum Thermal Resistance, Junction-case
Maximum Thermal Resistance, Junction-ambient
Rating
30
±20
75
63
350
96
0.7
29
-55 to 150
-55 to 150
Value
1.3
62
Units
V
V
A
A
A
W
W/°C
mJ
°C
°C
Units
°C/W
°C/W
2/17/2005 Rev.2.3
www.SiliconStandard.com
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SSM90T03GP,S
ELECTRICAL CHARACTERISTICS (at Tj=25°C, unless otherwise specified)
Symbol
BVDSS
∆ ∆BVDSS/ Tj
RDS(ON)
VGS(th)
gfs
IDSS
IGSS
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
Ciss
Coss
Crss
Parameter
Test Conditions
Drain-Source Breakdown Voltage
VGS=0V, ID=1mA
Breakdown Voltage Temperature Coefficient Reference to 25°C, ID=1mA
Static Drain-Source On-Resistance2 VGS=10V, ID=45A
Gate Threshold Voltage
Forward Transconductance
Drain-Source Leakage Current (Tj=25oC)
Drain-Source Leakage Current (Tj=150oC)
Gate-Source Leakage
Total Gate Charge2
Gate-Source Charge
Gate-Drain ("Miller") Charge
Turn-on Delay Time2
Rise Time
Turn-off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
VGS=4.5V, ID=30A
VDS=VGS, ID=250uA
VDS=10V, ID=30A
VDS=30V, VGS=0V
VDS=24V ,VGS=0V
VGS= ±20V
ID=40A
VDS=24V
VGS=4.5V
VDS=15V
ID=30A
RG=3.3, VGS=10V
RD=0.5
VGS=0V
VDS=25V
f=1.0MHz
Source-Drain Diode
Symbol
VSD
trr
Qrr
Parameter
Forward On Voltage2
Reverse Recovery Time2
Reverse Recovery Charge
Test Conditions
IS=45A, VGS=0V
IS=30A, VGS=0V,
dI/dt=100A/µs
Min. Typ. Max. Units
30 -
-V
- 0.02 - V/°C
- - 4 m
- - 6 m
0.8 -
3V
- 55 -
S
- - 1 uA
- - 25 uA
- - ±100 nA
- 60 96 nC
- 8.5 - nC
- 38 - nC
- 14 - ns
- 83 - ns
- 66 - ns
- 120 - ns
- 4090 6540 pF
- 1010 - pF
- 890 - pF
Min. Typ. Max. Units
- - 1.3 V
- 51 - ns
- 63 - nC
Notes:
1.Pulse width limited by safe operating area.
2.Pulse width <300us , duty cycle <2%.
3.VDD=25V, L=100uH, RG=25, IAS=24A.
2/17/2005 Rev.2.3
www.SiliconStandard.com
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200
T C =25°C
160
120
80
10V
7.0V
5.0V
4.5V
V G =3.0V
40
0
0123
V DS , Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
5.0
I D =20A
T C =25°C
4.5
4.0
3.5
2 4 6 8 10
V GS , Gate-to-Source Voltage (V)
12
Fig 3. On-Resistance vs. Gate Voltage
20
SSM90T03GP,S
160
140 T C =150°C
120
100
80
10V
7.0V
5.0V
4.5V
V G =3.0V
60
40
20
0
01234
V DS , Drain-to-Source Voltage (V)
5
Fig 2. Typical Output Characteristics
2.0
1.8 I D = 45A
1.5
1.3
1.0
0.8
0.5
0.3
0.0
-50 0 50 100 150
T j , Junction Temperature (°C)
Fig 4. Normalized On-Resistance
vs. Junction Temperature
2
15
T j =150°C
10
T j =25°C
1.5
1
5 0.5
0
0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1
V SD , Source-to-Drain Voltage (V)
Fig 5. Forward Characteristic of
Reverse Diode
0
-50 25 100
T j , Junction Temperature (°C)
175
Fig 6. Gate Threshold Voltage vs.
Junction Temperature
2/17/2005 Rev.2.3
www.SiliconStandard.com
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