SSM9980M.pdf 데이터시트 (총 5 페이지) - 파일 다운로드 SSM9980M 데이타시트 다운로드

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SSM9980M/GM
DUAL N-CHANNEL ENHANCEMENT-MODE POWER MOSFETS
Simple drive requirement
Lower gate charge
Fast switching characteristics
Description
D2
D2
D1
D1
SO-8
G2
S2
G1
S1
Advanced Power MOSFETs from Silicon Standard provide the
designer with the best combination of fast switching,
ruggedized device design, low on-resistance and cost-effectiveness.
BV DSS
R DS(ON)
ID
80V
52m
4.6A
D1
G1 G2
D2
The SSM9980M is in the SO-8 package, which is widely preferred for
S1 S2
commercial and industrial surface mount applications, and is well suited
for low voltage applications such as DC/DC converters.
This device is available with Pb-free lead finish (second-level interconnect) as SSM9980GM.
Absolute Maximum Ratings
Symbol
Parameter
VDS
VGS
ID @ TA=25°C
ID @ TA=100°C
IDM
PD @ TA=25°C
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current3
Continuous Drain Current3
Pulsed Drain Current1
Total Power Dissipation
Linear Derating Factor
TSTG
TJ
Storage Temperature Range
Operating Junction Temperature Range
Rating
80
± 20
4.6
2.9
30
2
0.016
-55 to 150
-55 to 150
Units
V
V
A
A
A
W
W/°C
°C
°C
Thermal Data
Symbol
Rthj-a
Parameter
Thermal Resistance Junction-ambient3
Max.
Value
62.5
Unit
°C/W
12/10/2004 Rev.2.01
www.SiliconStandard.com
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SSM9980M/GM
Electrical Characteristics @ Tj=25oC (unless otherwise specified)
Symbol
Parameter
Test Conditions
Min. Typ. Max. Units
BVDSS
BVDSS/ Tj
RDS(ON)
VGS(th)
gfs
IDSS
IGSS
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
Ciss
Coss
Crss
Drain-Source Breakdown Voltage
VGS=0V, ID=1mA
Breakdown Voltage Temperature Coefficient Reference to 25°C, ID=1mA
Static Drain-Source On-Resistance2 VGS=10V, ID=4.6A
Gate Threshold Voltage
Forward Transconductance
Drain-Source Leakage Current (Tj=25oC)
Drain-Source Leakage Current (Tj=70oC)
Gate-Source Leakage
Total Gate Charge2
Gate-Source Charge
Gate-Drain ("Miller") Charge
Turn-on Delay Time2
Rise Time
Turn-off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
VGS=4.5V, ID=3.6A
VDS=VGS, ID=250uA
VDS=10V, ID=4A
VDS=80V, VGS=0V
VDS=64V ,VGS=0V
VGS= ± 20V
ID=4A
VDS=64V
VGS=4.5V
VDS=40V
ID=1A
RG=3.3, VGS=10V
RD=40
VGS=0V
VDS=25V
f=1.0MHz
80 -
-V
- 0.08 - V/°C
- - 52 m
- - 60 m
1 - 3V
-7-S
- - 1 uA
- - 25 uA
- ±100 nA
- 19 30 nC
- 5 - nC
- 10 - nC
- 11 - ns
- 6 - ns
- 30 - ns
- 16 - ns
- 1820 2910 pF
- 130 - pF
- 94 - pF
Source-Drain Diode
Symbol
VSD
trr
Qrr
Parameter
Forward On Voltage2
Reverse Recovery Time2
Reverse Recovery Charge
Test Conditions
IS=1.6A, VGS=0V
IS=4A, VGS=0V,
dI/dt=100A/µs
Min. Typ. Max. Units
- - 1.2 V
- 44 - ns
- 90 - nC
Notes:
1.Pulse width limited by max. junction temperature.
2.Pulse width <300us , duty cycle <2%.
3.Surface mounted on 1 in2 copper pad of FR4 board ; 135°C/W when mounted on min. copper pad.
12/10/2004 Rev.2.01
www.SiliconStandard.com
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70
60 T A =25 o C
50
40
10V
7.0V
5.0V
4.5V
30
20
V G =3.0V
10
0
0 2 4 6 8 10 12
V DS , Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
55
I D =3.6A
T A =25 o C
50
45
50
40 T A =150 o C
30
SSM9980M/GM
10V
7.0V
5.0V
4.5V
20
V G =3.0V
10
0
0 2 4 6 8 10 12
V DS , Drain-to-Source Voltage (V)
Fig 2. Typical Output Characteristics
2.3
I D = 4.6 A
V G =10V
1.8
1.3
0.8
40
2 4 6 8 10 12
V GS , Gate-to-Source Voltage (V)
Fig 3. On-Resistance vs. Gate Voltage
4
3
2 T j =150 o C
1
T j =25 o C
0
0 0.2 0.4 0.6 0.8 1 1.2
V SD , Source-to-Drain Voltage (V)
Fig.5 Forward Characteristic of
Reverse Diode
1.4
0.3
-50
0
50 100
T j , Junction Temperature ( o C)
150
Fig 4. Normalized On-Resistance
vs. Junction Temperature
3
2.5
2
1.5
1
0.5
-50 0 50 100
T j ,Junction Temperature ( o C)
150
Fig 6. Gate Threshold Voltage vs.
Junction Temperature
12/10/2004 Rev.2.01
www.SiliconStandard.com
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