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SSM9926GM
Dual N-channel Enhancement-mode Power MOSFETs
PRODUCT SUMMARY
BVDSS
R DS(ON)
ID
20V
30m
6A
Pb-free; RoHS-compliant SO-8
D2
D2
D1
D1
SO-8
G2
S2
G1
S1
DESCRIPTION
The SSM9926GM acheives fast switching performance
with low gate charge without a complex drive circuit. It
is suitable for low voltage applications such as DC/DC
converters and general load-switching circuits.
The SSM9926GM is supplied in an RoHS-compliant
SO-8 package, which is widely used for medium power
commercial and industrial surface mount applications.
ABSOLUTE MAXIMUM RATINGS
Symbol
VDS
VGS
ID
IDM
PD
TSTG
TJ
Parameter
Drain-source voltage
Gate-source voltage
Continuous drain current 3, T A = 25°C
Pulsed drain current 1,2
TA = 70°C
Total power dissipation 3, TA = 25°C
Linear derating factor
Storage temperature range
Operating junction temperature range
THERMAL CHARACTERISTICS
Symbol
RΘJA
Parameter
Maximum thermal resistance, junction-ambient3
Value
20
± 12
6
4.8
26
2
0.016
-55 to 150
-55 to 150
Value
62.5
Units
V
V
A
A
A
W
W/°C
°C
°C
Units
°C/W
Notes:
1.Pulse width must be limited to avoid exceeding the maximum junction temperature of 150°C.
2.Pulse width <300us, duty cycle <2%.
3.Mounted on a square inch of copper pad on FR4 board ; 135°C/W when mounted on the minimum pad area required for soldering.
3/16/2006 Rev.3.01
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SSM9926GM
ELECTRICAL CHARACTERISTICS (at Tj = 25°C, unless otherwise specified)
Symbol
BVDSS
BV DSS/Tj
RDS(ON)
VGS(th)
gfs
IDSS
IGSS
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
Ciss
Coss
Crss
Parameter
Test Conditions
Drain-source breakdown voltage
Breakdown voltage temperature coefficient
Static drain-source on-resistance2
Gate threshold voltage
Forward transconductance
Drain-source leakage current
Gate-source leakage current
Total gate charge 2
Gate-source charge
Gate-drain ("Miller") charge
Turn-on delay time 2
Rise time
Turn-off delay time
Fall time
Input capacitance
Output capacitance
Reverse transfer capacitance
VGS=0V, ID=250uA
Reference to 25°C, ID=1mA
VGS=4.5V, ID=6A
VGS=2.5V, ID=5.2A
VDS=VGS, ID=250uA
VDS=10V, ID=6A
VDS=20V, VGS=0V
VDS=20V ,VGS=0V, Tj = 70°C
VGS12V
ID=6A
VDS=20V
VGS=5V
VDS=10V
ID=1A
RG=6, VGS=5V
RD=10
VGS=0V
VDS=20V
f=1.0MHz
Min. Typ. Max. Units
20 -
-V
- 0.03 - V/°C
- - 30 m
- - 45 m
- - 1.2 V
- 20 - S
- - 25 uA
- - 250 uA
- - ±100 nA
- 23 35 nC
- 4.5 7 nC
- 7 11 nC
- 30 60 ns
- 70 140 ns
- 40 80 ns
- 65 130 ns
- 1035 -
- 320 -
pF
pF
- 150 - pF
Source-Drain Diode
Symbol
VSD
Is
Parameter
Test Conditions
Forward voltage 2
IS=1.7A, VGS=0V
Continuous source current (body diode) VD=VG=0V , VS=1.3V
Min. Typ. Max. Units
- 0.78 1.2 V
- - 1.54 A
Notes:
1.Pulse width must be limited to avoid exceeding the maximum junction temperature of 150°C.
2.Pulse width <300us, duty cycle <2%.
3/16/2006 Rev.3.01
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SSM9926GM
25
T C =25 o C
20
15
4.5V
4.0V
3.5V
10 3.0V
5 2.5V
V GS = 2 .0V
0
0 0.4 0.8 1.2
V DS , Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
20
T C =150 o C
16
4.5V
4.0V
3.5V
12
3.0V
8
2.5V
4
2.0V
0 V GS = 1 . 5 V
0 0.4 0.8 1.2 1.6
V DS , Drain-to-Source Voltage (V)
Fig 2. Typical Output Characteristics
50
I D =6A
V GS =2.5V
40 4.5V
1.8
I D =6A
V GS =4.5V
1.5
30 1.2
20 0.9
10
-50 0 50 100 150
T j , Junction Temperature ( o C)
0.6
-50
0 50 100
T j , Junction Temperature ( o C)
150
Fig 3. RDS(ON) vs. Junction Temperature
Fig 4. Normalized On-Resistance
vs. Temperature
3/16/2006 Rev.3.01
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SSM9926GM
8
7
6
5
4
3
2
1
0
25 50 75 100 125 150
T c , Case Temperature ( o C)
Fig 5. Maximum Drain Current vs.
Case Temperature
2.5
2
1.5
1
0.5
0
0
50 100
Tc ( oC )
150
Fig 6. Typical Power Dissipation
100
10
1
0.1 T C =25 o C
Single Pulse
0.01
0.1
1 10
V DS (V)
1ms
10ms
100ms
1s
10s
DC
100
Fig 7. Maximum Safe Operating Area
1
Duty Factor = 0.5
0.2
0.1
0.1
0.05
0.02
0.01
0.01
Single Pulse
PDM
t
T
0.001
0.0001
0.001
Duty Factor = t/T
Peak Tj = PDM x Rthja + Ta
Rthja=135oC/W
0.01 0.1 1 10
t , Pulse Width (S)
100 1000
Fig 8. Effective Transient Thermal Impedance
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SSM9926GM
12
V DS =10V
V DS =15V
9
V DS =20V
6
10000
1000
f=1.0MHz
Ciss
3
0
0 9 18 27 36 45
Q G , Total Gate Charge (nC)
Fig 9. Typical Gate Charge vs. VGS
Coss
100
1
Crss
10
V DS (V)
19
Fig 10. Typical Capacitance vs. VDS
10
T j =150 o C
T j =25 o C
1
1.2
0.95
0.7
0.45
0.1
0
0.4 0.8 1.2
V SD (V)
1.6
Fig 11. Forward Characteristic of
Reverse Diode
0.2
-50
0 50 100
T j , Junction Temperature ( o C )
150
Fig 12. Gate Threshold Voltage vs.
Junction Temperature
3/16/2006 Rev.3.01
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