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SSM9406GM
N-channel Enhancement-mode Power MOSFET
PRODUCT SUMMARY
BVDSS
R DS(ON)
ID
30V
18m
9A
Pb-free; RoHS-compliant SO-8
D
D
D
D
SO-8
G
S
SS
DESCRIPTION
The SSM9406GM acheives fast switching performance
with low gate charge without a complex drive circuit. It
is suitable for low voltage applications such as DC/DC
converters and general load-switching circuits.
The SSM9406GM is supplied in an RoHS-compliant
SO-8 package, which is widely used for medium power
commercial and industrial surface mount applications.
ABSOLUTE MAXIMUM RATINGS
Symbol
VDS
VGS
ID
IDM
PD
Parameter
Drain-source voltage
Gate-source voltage
Continuous drain current, TC = 25°C
Pulsed drain current1
TC = 70°C
Total power dissipation, TC = 25°C
Linear derating factor
Value
30
±20
9
7.5
50
2.5
0.02
Units
V
V
A
A
A
W
W/°C
TSTG
TJ
Storage temperature range
Operating junction temperature range
THERMAL CHARACTERISTICS
Symbol
RΘJA
Parameter
Maximum thermal resistance, junction-ambient3
-55 to 150
-55 to 150
°C
°C
Value
50
Units
°C/W
Notes:
1.Pulse width must be limited to avoid exceeding the maximum junction temperature of 150°C.
2.Pulse width <300us, duty cycle <2%.
3.Mounted on a square inch of copper pad on FR4 board ; 125°C/W when mounted on the minimum pad area required for soldering.
3/16/2006 Rev.3.01
www.SiliconStandard.com
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SSM9406GM
ELECTRICAL CHARACTERISTICS (at Tj = 25°C, unless otherwise specified)
Symbol
BVDSS
BV DSS/Tj
RDS(ON)
VGS(th)
gfs
IDSS
IGSS
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
Ciss
Coss
Crss
Rg
Parameter
Test Conditions
Drain-source breakdown voltage
Breakdown voltage temperature coefficient
Static drain-source on-resistance2
Gate threshold voltage
Forward transconductance
Drain-source leakage current
Gate-source leakage current
Total gate charge 2
Gate-source charge
Gate-drain ("Miller") charge
Turn-on delay time 2
Rise time
Turn-off delay time
Fall time
Input capacitance
Output capacitance
Reverse transfer capacitance
VGS=0V, ID=250uA
Reference to 25°C, ID=1mA
VGS=10V, ID=9A
VGS=4.5V, ID=7A
VDS=VGS, ID=250uA
VDS=10V, ID=9A
VDS=30V, VGS=0V
VDS=24V ,VGS=0V, Tj = 70°C
VGS=±20V
ID=9A
VDS=24V
VGS=4.5V
VDS=15V
ID=1A
RG=3.3, VGS=10V
RD=15
VGS=0V
VDS=25V
f=1.0MHz
Gate Resistance
f=1.0MHz
Min. Typ. Max. Units
30 - - V
- 0.02 - V/°C
- - 18 m
- - 25 m
1 - 3V
- 15 -
S
- - 1 uA
- - 25 uA
- - ±100 nA
- 8 13 nC
- 2 - nC
- 4 - nC
- 7 - ns
- 6 - ns
- 19 - ns
-7
- ns
- 620 1530 pF
- 230 - pF
- 90 - pF
- 3.2 -
Source-Drain Diode
Symbol
VSD
trr
Qrr
Parameter
Forward voltage 2
Reverse-recovery time
Reverse-recovery charge
Test Conditions
IS=2.1A, VGS=0V
IS=9A, VGS=0V,
dI/dt=100A/µs
Min. Typ. Max. Units
- - 1.2 V
- 24 - ns
- 16 - nC
Notes:
1.Pulse width must be limited to avoid exceeding the maximum junction temperature of 150°C.
2.Pulse width <300us, duty cycle <2%.
3/16/2006 Rev.3.01
www.SiliconStandard.com
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50
T A = 25 o C
10V
7.0V
40 5.0V
4.5V
30
20 V G = 3.0 V
10
0
01234
V DS , Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
24
ID=7A
T A =25°C
21
18
15
12
2 4 6 8 10
V GS , Gate-to-Source Voltage (V)
Fig 3. On-Resistance vs. Gate Voltage
9
SSM9406GM
50
T A = 150 o C
40
30
10V
7.0V
5.0V
4.5V
20 V G = 3.0 V
10
0
0.0 1.0 2.0 3.0 4.0
V DS , Drain-to-Source Voltage (V)
Fig 2. Typical Output Characteristics
1.6
ID=9A
1.4 V G =10V
1.2
1.0
0.8
0.6
-50 0 50 100 150
T j , Junction Temperature ( o C)
Fig 4. Normalized On-Resistance
vs. Junction Temperature
2
6
T j =150 o C
3
T j =25 o C
1.5
1
0.5
0
0 0.2 0.4 0.6 0.8 1 1.2
V SD , Source-to-Drain Voltage (V)
0
-50 0 50 100 150
T j , Junction Temperature ( o C)
Fig 5. Forward Characteristic of
Reverse Diode
Fig 6. Gate Threshold Voltage vs.
Junction Temperature
3/16/2006 Rev.3.01
www.SiliconStandard.com
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