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HTC4A60S
4 Quadrants Sensitive TRIAC
FEATURES
Repetitive Peak Off-State Voltage : 600V
R.M.S On–State Current (IT(RMS) = 4A)
Sensitive Gate Trigger Current
- 5[mA] of IGT at I, II and III Quadrants.
- 12[mA] of IGT at IV Quadrant.
VDRM = 600 V
IT(RMS) = 4 A
ITSM = 33 A
IGT = 5mA/12mA
Symbol
TO-126
Applications
Heating control, Lighting control, Motor control such like dimmer,
sensor light, Humidifier, etc.
General Description
Semihow’s sensitive TRIAC product is a glass passivated device,
has a low gate trigger current, high stability in gate trigger current to
variation of operating temperature and high off state voltage. It is
generally suitable for power and phase control in ac application.
Absolute Maximum Ratings (TJ=25unless otherwise specified )
Symbol
Parameter
Conditions
VDRM
VRRM
IT(AV)
IT(RMS)
Repetitive Peak Off-State Voltage
Repetitive Peak Reverse Voltage
Average On-State Current
R.M.S. On-State Current
ITSM Surge On-State Current
I2t Fusing Current
PGM
Forward Peak Gate Power
Dissipation
Sine wave, 50/60Hz, Gate open
Full sine wave, TC = 109.5oC
½ cycle, 50Hz/60Hz, Sine wave,
Non repetitive
t = 10ms
TJ = 125 °C
PG(AV)
Forward Average Gate Power
Dissipation
IFGM
VRGM
TJ
TSTG
Forward Peak Gate Current
Reverse Peak Gate Voltage
Operating Junction Temperature
Storage Temperature
TJ = 125 °C, over any 20ms
TJ = 125 °C, pulse width ≤ 20us
TJ = 125 °C, pulse width ≤ 20us
T1
T2
G
Ratings
600
600
3.6
4
30/33
4.5
2
Unit
V
V
A
A
A
A2S
W
0.2 W
1
6
-40~+125
-40~+150
A
V
oC
oC
SEMIHOW REV.A1,March 2013

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Electrical Characteristics (TJ=25unless otherwise specified )
Symbol
Parameter
Conditions
Min Typ Max Unit
IDRM Repetitive Peak Off-State Current VD = VDRM
TJ=25oC
TJ=125oC
IRRM Repetitive Peak Reverse Current VD = VDRM
TJ=25oC
TJ=125oC
IGT Gate Trigger Current
1+, 1-, 3-
VD = 12V, RL=330
3+
-
-
-
-
-
-
- 50 uA
- 5 mA
- 50 uA
- 5 mA
- 5 mA
- 12 mA
VGT Gate Trigger Voltage
1+, 1-, 3-
VD = 12V, RL=330
3+
-
-
- 1.5 V
- 2.0 V
VGD Non-Trigger Gate Voltage1
VD = 12V, RL=330, TJ=125oC
0.2
-
-V
VTM Peak On-State Voltage
IT = 5.6A, IG = 20mA
- - 1.6 V
dv/dt
Critical Rate of Rise of Off-State
Voltage
VD = 2/3 VDRM, TJ=125oC
10 -
- V/us
IH Holding current
IT= 0.2A
- 5 - mA
Notes :
1. Pulse Width ≤ 1.0ms, Duty Cycle ≤ 1%
Thermal Characteristics
Symbol
Parameter
RθJC
RθJA
Thermal Resistance
Thermal Resistance
Conditions
Junction to Case
Junction to Ambient
Min Typ Max Unit
3.6 oC/W
80 oC/W
SEMIHOW REV.A1,March 2013

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Typical Characteristics
5
180o
4 150o
120o
3
90o
2
1 60o
30o
0
01234
R.M.S. on state current, I [A]
T(RMS)
5
Fig 1. R.M.S. current vs. Power dissipation
130
125 30o
60o
120
90o
115
120o
110 150o
180o
105
100
0
1234
R.M.S. on state current, IT(RMS) [A]
5
Fig 2. R.M.S. current vs. Case temperature
101
25[oC]
I+GT3
100
25[oC]
I+GT1
I-GT1
I-GT3
PGM(2W)
PG(AV)(0.2W)
10-1
100
VGD
101 102 103
Gate current, IG [mA]
Fig 3. Gate power characteristics
104
2.5
2.0
1.5
I+GT1
I-GT1
1.0 I-GT3
0.5 I+GT3
0.0
-50
-25
0 25 50 75 100 125 150
Junction Temperature, TJ[oC]
Fig 5. Gate trigger current vs.
junction temperature
40
35
30
25
60Hz
20
50Hz
15
10
5
0
100 101 102
Time[cycles]
Fig 4. Surge on state current rating
(Non-repetitive)
2.5
2.0
1.5 V+GT1
V-GT1
V+GT3
1.0 V-GT3
0.5
0.0
-50
-25
0 25 50 75 100 125 150
Junction temperature, T [oC]
J
Fig 6. Gate trigger voltage vs.
junction temperature
SEMIHOW REV.A1,March 2013

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Typical Characteristics
102
25oC
101 125oC
103
102
100
RS=0.078
VTO=0.85V
10-1
012345
Instantaneous on state voltage, VT [V]
Fig 7. Instantaneous on state current vs.
Instantaneous on state voltage
101
100
10-2
10-1 100
Pulse Time [sec]
101
Fig 8. Thermal Impedance vs. pulse time
Measurement of gate trigger current
RL RL RL RL
RG
VDD
RG
VDD
RG
VDD
RG
VDD
VG VG VG VG
(1) Quadrant I
(2) Quadrant II
(3) Quadrant III
(4) Quadrant IV
Note. Whole parameter and test condition can not be over absolute maximum ratings in this datasheet.
SEMIHOW REV.A1,March 2013

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Package Dimension
TO-126
Dimensions in Millimeters
SEMIHOW REV.A1,March 2013