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HTP6A60H/HTP6A80H
3 Quadrants Standard TRIAC
FEATURES
Repetitive Peak Off-State Voltage : 600V/800V
R.M.S On–State Current (IT(RMS) = 6A)
Gate Trigger Current : 25mA
High commutation capability.
VDRM = 600V/800V
IT(RMS) = 6 A
ITSM = 63 A
IGT = 25mA
Symbol
TO-220
Applications
General purpose of AC switching, heating control, motor control, etc
T1
T2
G
General Description
Semihow’s standard TRIAC product is a glass passivated device,
has a high commutative performance, stable gate triggering level to
temperature and high off state voltage. It is generally suitable for
power and phase control in ac application
Absolute Maximum Ratings
Symbol
Parameter
VDRM
VRRM
IT(AV)
IT(RMS)
Repetitive Peak Off-State Voltage
Repetitive Peak Reverse Voltage
Average On-State Current
R.M.S. On-State Current
ITSM Surge On-State Current
(TJ=25unless otherwise specified )
Conditions
Ratings
HTP6A60H HTP6A80H
Sine wave, 50/60Hz, Gate open
600
600
800
800
Full sine wave, TC = 97.6oC
5.4
6
½ cycle, 50Hz/60Hz, Sine wave,
Non repetitive
60/63
Unit
V
V
A
A
A
I2t Fusing Current
t = 10ms
18 A2S
PGM
Forward Peak Gate Power
Dissipation
TJ = 125 °C
5W
PG(AV)
Forward Average Gate Power
Dissipation
IFGM
VRGM
TJ
TSTG
Forward Peak Gate Current
Reverse Peak Gate Voltage
Operating Junction Temperature
Storage Temperature
TJ = 125 °C, over any 20ms
TJ = 125 °C, pulse width ≤ 20us
TJ = 125 °C, pulse width ≤ 20us
0.5 W
2
10
-40~+150
-40~+150
A
V
oC
oC
SEMIHOW REV.A1,March 2013

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Electrical Characteristics (TJ=25unless otherwise specified )
Symbol
Parameter
Conditions
Min Typ Max Unit
IDRM Repetitive Peak Off-State Current VD = VDRM
TJ=25oC
TJ=125oC
-
-
- 50 uA
- 5 mA
IRRM Repetitive Peak Reverse Current VD = VDRM
TJ=25oC
TJ=125oC
-
-
- 50 uA
- 5 mA
IGT Gate Trigger Current
VD = 12V, RL=3301+, 1-, 3- -
- 25 mA
VGT Gate Trigger Voltage
VD = 12V, RL=3301+, 1-, 3- -
- 1.5 V
VGD Non-Trigger Gate Voltage1
VD = 12V, RL=330, TJ=125oC
0.2
-
-V
VTM Peak On-State Voltage
IT = 8.5A, IG = 20mA
- 1.2 1.5 V
dv/dt
Critical Rate of Rise of Off-State
Voltage
VD = 2/3 VDRM, TJ=125oC
200 -
- V/us
IH Holding current
IT= 0.2A
- 45 - mA
Notes :
1. Pulse Width ≤ 1.0ms, Duty Cycle ≤ 1%
Thermal Characteristics
Symbol
Parameter
RθJC
RθJA
Thermal Resistance
Thermal Resistance
Conditions
Junction to Case
Junction to Ambient
Min Typ Max Unit
3.9 oC/W
58 oC/W
SEMIHOW REV.A1,March 2013

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Typical Characteristics
8
180o
6
150o
120o
4
90o
2
60o
0 30o
01234567
R.M.S. on state current, I [A]
T(RMS)
Fig 1. R.M.S. current vs. Power dissipation
130
30o
120
60o
90o
110
120o
150o
100 180o
90
01234567
R.M.S. on state current, IT(RMS) [A]
Fig 2. R.M.S. current vs. Case temperature
101
PGM(5W)
PG(AV)(0.5W)
100 25[oC]
I+GT1
I-GT1
I-GT3
10-1
100
V
GD
101 102 103
Gate current, IG [mA]
Fig 3. Gate power characteristics
104
3
80
70
60
50
60Hz
40
50Hz
30
20
10
0
100 101 102
Time [cycles]
Fig 4. Surge on state current rating
(Non-repetitive)
3
2
I+GT1
I-GT1
1 I-GT3
2
V+GT1
V-GT1
V-GT3
1
0
-50 -25
0 25 50 75 100 125 150
Junction temperature, TJ [oC]
Fig 5. Gate trigger current vs.
junction temperature
0
-50 -25
0 25 50 75 100 125 150
Junction temperature, TJ [oC]
Fig 6. Gate trigger voltage vs.
junction temperature
SEMIHOW REV.A1,March 2013

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Typical Characteristics
3 101
2
1
0
-50 -25
0 25 50 75 100 125 150
Junction Temperature, TJ [oC]
Fig 7. Holding current vs.
Junction temperature
102
25oC
101 150oC
100
10-2
10-1 100
Pulse Time [sec]
101
Fig 8. Thermal Impedance vs. pulse time
100
RS=0.052
VTO=0.81V
10-1
0
123
Instantaneou on state voltage, VT [V]
4
Fig 9. Instantaneous on state current vs.
Instantaneous on state voltage
Measurement of gate trigger current
RL RL RL RL
RG
VDD
RG
VDD
RG
VDD
RG
VDD
VG VG VG VG
(1) Quadrant I
(2) Quadrant II
(3) Quadrant III
(4) Quadrant IV
Note. Whole parameter and test condition can not be over absolute maximum ratings in this datasheet.
SEMIHOW REV.A1,March 2013

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Package Dimension
TO-220 (A)
9.90±0.20
φ3.60±0.20
4.50±0.20
1.30±0.20
1.27±0.20
1.52±0.20
2.54typ
2.54typ
2.40±0.20
0.80±0.20
0.50±0.20
SEMIHOW REV.A1,March 2013